Zobrazeno 1 - 10
of 91
pro vyhledávání: '"Hidehiro Asai"'
Autor:
Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori
Publikováno v:
IEEE Access, Vol 12, Pp 12458-12464 (2024)
This study investigated changes in low-frequency noise sources associated with short-channel bulk metal-oxide-semiconductor field-effect transistors (MOSFETs) by analyzing random telegraph noise (RTN) from 300 K down to 3 K. The power spectral densit
Externí odkaz:
https://doaj.org/article/86a0341b30734716b05676159ca3cc5b
Autor:
Hiroshi Oka, Takumi Inaba, Shunsuke Shitakata, Kimihiko Kato, Shota Iizuka, Hidehiro Asai, Hiroshi Fuketa, Takahiro Mori
Publikováno v:
IEEE Access, Vol 11, Pp 121567-121573 (2023)
This study investigates the origin of low-frequency (LF) 1/ $f$ noise in Si n-channel metal-oxide-semiconductor field-effect transistors (n-MOSFETs) under cryogenic operation. The fluctuation of the drain current increased with decreasing temperature
Externí odkaz:
https://doaj.org/article/85ccaad116e34e26a41e0f4a9d4dbb21
Autor:
Takumi Inaba, Yusuke Chiashi, Minoru Ogura, Hidehiro Asai, Hiroshi Fuketa, Hiroshi Oka, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Takahiro Mori
Publikováno v:
Applied Physics Express, Vol 17, Iss 7, p 074002 (2024)
Transfer learning was examined to predict current-voltage (I-V) characteristics of MOSFETs at cryogenic temperatures. An experimental dataset was obtained from approximately 800 silicon-on-insulator MOSFETs using an automated cryogenic wafer prober t
Externí odkaz:
https://doaj.org/article/0dec5a0c307843deb506f838df9417f0
Autor:
Makoto Minohara, Shutaro Asanuma, Hidehiro Asai, Yuka Dobashi, Akane Samizo, Yasuhisa Tezuka, Kenichi Ozawa, Kazuhiko Mase, Izumi Hase, Naoto Kikuchi, Yoshihiro Aiura
Publikováno v:
Nano Select, Vol 3, Iss 6, Pp 1012-1020 (2022)
Abstract Ambipolar transistor operation in SnO thin‐film transistors (TFTs) is a promising character for future practical application, such as in integrated logic devices based on oxide semiconductors, because of its ability to develop them using a
Externí odkaz:
https://doaj.org/article/7201ac383ca147b7a43dcabcce6606e1
Autor:
Hidehiro Asai, Takahiro Mori, Takashi Matsukawa, Junichi Hattori, Kazuhiko Endo, Koichi Fukuda
Publikováno v:
AIP Advances, Vol 8, Iss 9, Pp 095103-095103-6 (2018)
We propose a tunnel field-effect transistor (TFET) having a trimmed gate (TG) structure, which considerably improves the subthreshold swing (SS). The TG structure truncates the needless long band-to-band tunneling (BTBT) paths to a “channel”, whi
Externí odkaz:
https://doaj.org/article/875aed0a38ed4e9fbf30be209f7917e0
Autor:
Naoto Kikuchi, Kenichi Ozawa, Kazuhiko Mase, Yoshihiro Aiura, Makoto Minohara, Yuka Dobashi, Izumi Hase, Hidehiro Asai, Shutaro Asanuma, Akane Samizo, Yasuhisa Tezuka
Publikováno v:
Nano Select. 3:1012-1020
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35a6640d2d0641cf234c83ada4d74ef2
https://doi.org/10.1002/nano.202100272
https://doi.org/10.1002/nano.202100272
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0ec973ce95198fc26b3b4802f2d47d7
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830505
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830505
Autor:
Hidehiro Asai, Shota Iizuka, Tohru Mogami, Junichi Hattori, Koichi Fukuda, Tsutomu Ikegami, Kimihiko Kato, Hiroshi Oka, Takahiro Mori
Publikováno v:
Japanese Journal of Applied Physics. 62:SC1088
In this study, we propose technologies for the device structure, gate fabrication process, and back-bias-assisted operation of Si spin qubits to realize the high robustness of the two-qubit SWAP gate operation against process variations. We performed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0ea1c49b6dc482cdffee1f2123c072e
https://doi.org/10.35848/1347-4065/acbcdd
https://doi.org/10.35848/1347-4065/acbcdd
Publikováno v:
Nonlinear Theory and Its Applications, IEICE. 11:145-156
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c306671d4248cf11d1c6347446b3362f
https://doi.org/10.1587/nolta.11.145
https://doi.org/10.1587/nolta.11.145
Publikováno v:
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
GaN HEMTs are expected to achieve better device performance for microwave applications. The cellular automaton method is effective for predicting the transport characteristics of the two-dimensional electron gas, which is the key to the HEMT device p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85ef39dd8348f7a16a9995b42904433f
https://doi.org/10.1109/sispad54002.2021.9592574
https://doi.org/10.1109/sispad54002.2021.9592574