Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Hideharu Kyouda"'
Autor:
Takeo Ishibashi, Jianhai Jiang, Tetsuro Hanna, Yoko Takebe, Tomoharu Fujiwara, Teruhiko Kumada, Shinya Wakamizu, Takafumi Niwa, Osamu Yokokoji, Takuya Hagiwara, Mamoru Terai, Hideharu Kyouda
Publikováno v:
Journal of Photopolymer Science and Technology. 21:665-672
In this study, we focus on the controllability of a wafer bevel from adhesion and hydrophobicity viewpoints in order to solve the problems of film peeling and microdroplet formation around wafer bevels, which can result in pattern defects and degradi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe0d70a7d46767583b2b90ab50ed7986
https://doi.org/10.2494/photopolymer.21.665
https://doi.org/10.2494/photopolymer.21.665
Autor:
Kenichi Oyama, Arisa Hara, Sakurako Natori, Satoru Shimura, Shohei Yamauchi, Hidetami Yaegashi, Hideharu Kyouda, Yuhei Kuwahara
Publikováno v:
SPIE Proceedings.
Self-aligned double patterning (SADP) such as multi-patterning process seems to be the most promising technology for 22nm node devices and beyond. In recent years, in order to further scaling, other multi-patterning processes such as self-aligned tri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e289475dd3ebcafa7da6dfc9fcaca5fb
https://doi.org/10.1117/12.916327
https://doi.org/10.1117/12.916327
Autor:
Arisa Hara, Sakurako Natori, Shohei Yamauchi, Kenichi Oyama, Hidetami Yaegashi, Fumiko Iwao, Satoru Shimura, Hideharu Kyouda
Publikováno v:
SPIE Proceedings.
As part of the trend toward finer semiconductor design rules, the resist film thickness is getting thinner, and the etching technology that uses resist masking is getting more difficult. To solve such a problem in recent years, the film structure use
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36c6aaa40e8f5c4a541a16b5bce5eca7
https://doi.org/10.1117/12.916326
https://doi.org/10.1117/12.916326
Autor:
Hideharu Kyouda, Hiroshi Nakamura, Katsumi Ohmori, Jiro Yokoya, Tsuyoshi Nakamura, Takafumi Niwa, Junichi Kitano
Publikováno v:
SPIE Proceedings.
Double patterning techniques are one of the dominant method to achieve the 32 nm node and beyond and Litho-Litho- Etch (LLE) process is a strong candidate for double patterning method. Contact hole resolution is limited by the low image contrast usin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::331909637ed65f55bcaddc45f5514011
https://doi.org/10.1117/12.846342
https://doi.org/10.1117/12.846342
Publikováno v:
SPIE Proceedings.
The demand for more highly integrated semiconductor devices is driving efforts to reduce pattern dimensions in semiconductor lithography. It has been found that 193-nm immersion lithography can achieve smaller patterns without having to modify the in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74becec56f538a80b90c486b68b01518
https://doi.org/10.1117/12.804675
https://doi.org/10.1117/12.804675