Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Hidefumi Mori"'
Autor:
Hidefumi Mori, Masami Tachikawa
Publikováno v:
Journal of Crystal Growth. 183:89-94
We model dislocation generation in InP/Si in the cooling stage, from growth temperature to room temperature, under the inherent thermal stress in heteroepitaxy. The calculations are based on simplified models of dislocation reactions; i.e., the gener
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::261077112fa19160874e3d5d541a974c
https://doi.org/10.1016/s0022-0248(97)00389-8
https://doi.org/10.1016/s0022-0248(97)00389-8
Publikováno v:
Applied Surface Science. :765-770
The initial domain structure of GaAs films grown on several Si(001) surfaces is investigated using X-ray standing waves. GaAs/Si(001) samples, 4 ML thick, grown on three different Si substrates were used: an epitaxial Si surface (ESS), a mechanochemi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f4dd7db70802227cdc93f2ffdcbce54
https://doi.org/10.1016/s0169-4332(97)80179-1
https://doi.org/10.1016/s0169-4332(97)80179-1
Autor:
Hidefumi Mori, Masami Tachikawa
Publikováno v:
Journal of Crystal Growth. 143:349-353
Epitaxial Si surface as a substrate for GaAs heteroepitaxy was investigated by atomic force microscopy. It is found that 1 μm growth is sufficient for improving the surface roughness, but that 5 μm growth is necessary for forming periodically align
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5f510ad7c698e58c8f7e27b113c752a
https://doi.org/10.1016/0022-0248(94)90075-2
https://doi.org/10.1016/0022-0248(94)90075-2
Autor:
Hidefumi Mori
Publikováno v:
Journal of Crystal Growth. 140:291-298
Heteroepitaxial growth of InP on Si in an In-PH3-HC1-H2 system is demonstrated. Injecting hydrogen chloride into the growth ambiance prevents indium droplets from precipitating and enables the growth of a featureless InP buffer layer. Morphologies of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4eb7de6eee34f542c847321a4f9e6509
https://doi.org/10.1016/0022-0248(94)90302-6
https://doi.org/10.1016/0022-0248(94)90302-6
Publikováno v:
Polymer. 35:30-33
The ultrasonic degradation of the water-soluble polymers pullulan, poly(ethylene oxide) and polyvinylpyrrolidone was studied at a frequency of 500 kHz. The apparent degradation rate constants are 0.030 for pullulan, 0.076 for poly(ethylene oxide) and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b3b82592df58281cd971d74a80a89ae
https://doi.org/10.1016/0032-3861(94)90045-0
https://doi.org/10.1016/0032-3861(94)90045-0
Publikováno v:
ChemInform. 24
A high quality InP layer has been grown by using a combination of the OMVPE and VME growth methods, a GaAs buffer, SLS insertion, and thermal cycle annealing and regrowth. The FWHM of the X-ray rocking curve was 110'' for 13μm-thick InP on Si, and t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b215372939c4258f9a4092aa2fe9839
https://doi.org/10.1002/chin.199322291
https://doi.org/10.1002/chin.199322291
Publikováno v:
Journal of Crystal Growth. 103:363-366
We have examined the formation of the anti-phase boundary of GaAs films grown on lens-shaped Si substrates by low pressure metalorganic chemical vapor deposition. The pattern of the anti-phase boundary shows four-fold symmetry and changes depending o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ca4e19c9ef99061b287f329ac5ce45f
https://doi.org/10.1016/0022-0248(90)90212-4
https://doi.org/10.1016/0022-0248(90)90212-4
Publikováno v:
Applied Physics Letters. 68:1969-1971
The initial domain structure of hydride vapor phase epitaxy grown GaAs films on Si(001) was investigated using x‐ray standing waves. GaAs/Si(001) samples, 4 monolayers (ML) thick, grown on two different Si substrates were used: an epitaxial Si surf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47e9d3b7be3c22f1c33a07d0d761eb45
https://doi.org/10.1063/1.115642
https://doi.org/10.1063/1.115642
Publikováno v:
Applied Physics Letters. 64:751-753
To study performance and reproducibility of photodiodes (PDs) on Si in the long‐wavelength region, InAlAs/InGaAs metal‐semiconductor‐metal PDs were fabricated on high‐quality heteroepitaxial InP layers on Si substrates. A dark current of 0.5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59a4b562e73709f9c2e15a99aa0b4062
https://doi.org/10.1063/1.111055
https://doi.org/10.1063/1.111055
Publikováno v:
Applied Physics Letters. 63:1963-1965
This letter reports the growth of an anti‐phase‐free GaAs layer on a (100) epitaxial Si substrate offset by 0.5° without high‐temperature treatment prior to growth. Atomic force microscopy shows that the epitaxial Si surface has regular steps
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c63cc4e580e6f9638f8956ea56f7cbe
https://doi.org/10.1063/1.110615
https://doi.org/10.1063/1.110615