Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Hideaki Teranishi"'
Publikováno v:
Materials Science in Semiconductor Processing. 16:923-927
The behavior of precipitates in a floating zone silicon crystal produced from a Czochralski single-crystal ingot has been studied. Large precipitates of α-Si 3 N 4 crystal, having a dimension of about 2 μm, were formed at the mid-depth in the wafer
Precipitates Caused in Silicon Wafers by Prolonged High-Temperature Annealing in Nitrogen Atmosphere
Publikováno v:
MRS Proceedings. 1591
The precipitate behavior in a floating zone silicon crystal produced from a Czochralski single-crystal ingot has been studied. Large precipitates of α-Si3N4 crystal, having a dimension of about 2 μm, were formed at the mid-depth in the wafer by mea
Publikováno v:
Surface and Coatings Technology. :503-507
A large diameter electron cyclotron resonance plasma was produced with a multi-slot antenna. The radial profile of the ion saturation current was examined as a function of input microwave power, gas pressure and magnetic mirror coil current to determ
Precipitates formed in silicon wafers by prolonged high-temperature annealing in nitrogen atmosphere
Publikováno v:
Japanese Journal of Applied Physics. 53:05FJ05
A floating zone (FZ) silicon wafer produced from a Czochralski (CZ) single-crystal ingot was subjected to prolonged annealing at a high temperature in a N2 (70%) + O2 (30%) ambient. Precipitates were formed and their regions manifested themselves as
Publikováno v:
Japanese Journal of Applied Physics; May2014, Vol. 53 Issue 5S1, p1-1, 1p