Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Hideaki Numata"'
Autor:
Xu BAI, Ryusuke NEBASHI, Makoto MIYAMURA, Kazunori FUNAHASHI, Naoki BANNO, Koichiro OKAMOTO, Hideaki NUMATA, Noriyuki IGUCHI, Tadahiko SUGIBAYASHI, Toshitsugu SAKAMOTO, Munehiro TADA
Publikováno v:
IEICE Transactions on Electronics. :627-630
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e4fa74ec46c2aae54e6d7201acec8c8
https://doi.org/10.1587/transele.2021fus0005
https://doi.org/10.1587/transele.2021fus0005
Autor:
Naoki Banno, Hideaki Numata, Koichiro Okamoto, Ryusuke Nebashi, Tadahiko Sugibayashi, Noriyuki Iguchi, Masanori Hashimoto, Bai Xu, Makoto Miyamura, Munehiro Tada, Toshitsugu Sakamoto
Publikováno v:
IEEE Journal of Solid-State Circuits. 57:2250-2262
Offering a combination of low latency, high energy-efficiency, and flexibility, field-programmable gate arrays (FPGAs) suit applications ranging from Internet of Things (IoT) computing to artificial intelligence (AI). The conventional static random a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddc8a3ff8c9b7f118b1c11e89d2a9d4b
https://doi.org/10.1109/jssc.2021.3117260
https://doi.org/10.1109/jssc.2021.3117260
Autor:
Munehiro Tada, Bai Xu, Ryusuke Nebashi, Toshitsugu Sakamoto, Kazunori Funahashi, Noriyuki Iguchi, Tadahiko Sugibayashi, Naoki Banno, Makoto Miyamura, K. Okamoto, Hideaki Numata
Publikováno v:
FPL
A nonvolatile FPGA using atom-switch crossbars is implemented in a 28nm CMOS. The depopulated atom-switch crossbar with double-gate layout achieves 75% area saving. The routability degradation due to the depopulation is mitigated by a modified routin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43055bbd9508f1e708dc737311a33872
https://doi.org/10.1109/fpl50879.2020.00060
https://doi.org/10.1109/fpl50879.2020.00060
Autor:
Ryusuke Nebashi, K. Okamoto, Munehiro Tada, Masanori Hashimoto, Naoki Banno, Bai Xu, Toshitsugu Sakamoto, Tadahiko Sugibayashi, Noriyuki Iguchi, Hideaki Numata, Makoto Miyamura
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
1.5x energy-efficient and 1.4x operation-speed, nonvolatile via-switch (VS) FPGA with atom switch and a-Si/SiN/a-Si varistor is demonstrated in a 65nm-node for various basic applications. For rapid and low-cost migration from VS-FPGA to ASIC, “hard
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f444bda96ef9835e128157c614b3d22
https://doi.org/10.1109/vlsitechnology18217.2020.9265046
https://doi.org/10.1109/vlsitechnology18217.2020.9265046
Autor:
Bai Xu, Hiromitsu Hada, Ryusuke Nebashi, Noriyuki Iguchi, Kazunori Funahashi, Makoto Miyamura, K. Okamoto, Toshitsugu Sakamoto, Hideaki Numata, Naoki Banno, Tadahiko Sugibayashi, Munehiro Tada
Publikováno v:
IRPS
An ON-state retention of a 40nm-node atom switch embedded nonvolatile memory (eNVM) has been carefully investigated for IoT/AI inference solution. Based on ON-conductance (G on ) tuning model of atom switch, one order of magnitude lower programming p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46e24c09f6a889696528d6fa1f33761b
https://doi.org/10.1109/irps45951.2020.9128967
https://doi.org/10.1109/irps45951.2020.9128967
Autor:
Noriyuki Iguchi, Masanori Hashimoto, Tadahiko Sugibayashi, Toshitsugu Sakamoto, Munehiro Tada, Hideaki Numata, Hiromitsu Hada, K. Okamoto, Naoki Banno
Publikováno v:
2019 Silicon Nanoelectronics Workshop (SNW).
Sputter deposited Ge x Se 1−x films are characterized, prior to device fabrication for a selector. A Se-rich film has GeSe 4/2 tetrahedral structure and higher crystallization temperature than Ge-rich films. Printed Ag-paste electrodes are used for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3826f2ca41f2d096a0b993e47d148454
https://doi.org/10.23919/snw.2019.8782960
https://doi.org/10.23919/snw.2019.8782960
Autor:
Makoto Miyamura, Bai Xu, Naoki Banno, Tadahiko Sugibayashi, Noriyuki Iguchi, Hiromitsu Hada, Koichiro Okamoto, Munehiro Tada, Toshitsugu Sakamoto, Hideaki Numata, Ryusuke Nebashi
Publikováno v:
Japanese Journal of Applied Physics. 59:SGGB09
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::970b4902d8c664e2853c693018420d68
https://doi.org/10.7567/1347-4065/ab65ce
https://doi.org/10.7567/1347-4065/ab65ce
Autor:
Makoto Miyamura, Ryusuke Nebashi, Toshitsugu Sakamoto, Yukihide Tsuji, Hideaki Numata, Munehiro Tada, Tadahiko Sugibayashi, K. Okamoto, A. Morioka, Naoki Banno, Hiromitsu Hada, Bai Xu, Noriyuki Iguchi
Publikováno v:
2018 IEEE Symposium on VLSI Technology.
Key device/circuit technologies for realizing a 28nm-node atom switch programmable logic (AS-PL) have been developed. An advanced polymer solid-electrolyte (PSE) reduces set voltage down to 1.6 V while ensuring ON-state and OFF-state reliabilities un
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24dad3de61b84804adf305ffb7458e3b
https://doi.org/10.1109/vlsit.2018.8510703
https://doi.org/10.1109/vlsit.2018.8510703
Publikováno v:
Nanoelectronic Device Applications Handbook ISBN: 9781315216089
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b4980012fc12c10a979eef5970f76a4
https://doi.org/10.1201/b15035-41
https://doi.org/10.1201/b15035-41
Autor:
Hideaki Numata, Naoki Banno, Makoto Miyamura, Toshitsugu Sakamoto, Koichiro Okamoto, Ryusuke Nebashi, Bai Xu, Hiromitsu Hada, Munehiro Tada, Ayuka Morioka, Tadahiko Sugibayashi
Publikováno v:
Japanese Journal of Applied Physics. 58:SBBB04
An atom-switch field-programmable gate array (AS-FPGA) uses a simple crossbar switch structure for signal routing. An AS-crossbar switch enables a shorter delay thanks to single-stage routing and the low capacitance of the AS, unlike a routing block
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31e7e024c4268dab166da10f7a201e14
https://doi.org/10.7567/1347-4065/aaf899
https://doi.org/10.7567/1347-4065/aaf899