Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Hideaki Nonami"'
Autor:
Kousuke Tsuji, Osamu Otani, Norio Nakazato, Masato Hamamoto, T. Tomatsuri, E. Yoshida, Hideaki Nonami, Yoichi Tamaki
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 18:272-278
We have developed a new device structure suitable for high-performance and high-power mixed signal large scale integrations (LSIs) using 0.35-/spl mu/m SOI complementary bipolar transistors. The new structure is composed of array transistors for vari
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12e06dfdcfcab71783825dce80ff941e
https://doi.org/10.1109/tsm.2005.845017
https://doi.org/10.1109/tsm.2005.845017
Autor:
T. Tomatsuri, Norio Nakazato, Hideaki Nonami, Masato Hamamoto, O. Ohtani, E. Yoshida, Kousuke Tsuji, Y. Tamaki
Publikováno v:
Proceedings of the 2004 International Conference on Microelectronic Test Structures (IEEE Cat. No.04CH37516).
We have developed a new device structure for high-performance and high-power mixed signal LSIs using 0.35 /spl mu/m SOI complementary bipolar transistors. The new structure is composed of array transistors for various operating currents and a flexibl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9081c005ae83f0ff84a3f4a65a5ef6a
https://doi.org/10.1109/icmts.2004.1309468
https://doi.org/10.1109/icmts.2004.1309468
Autor:
Yoichi Tamaki, Kousuke Tsuji, Osamu Otani, Hideaki Nonami, Toshiyuki Tomatsuri, Eiichi Yoshida, Masato Hamamoto, Norio Nakazato
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing; May2005, Vol. 18 Issue 2, p272-278, 7p