Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Hideaki Iwano"'
Autor:
Hideaki, Iwano
Publikováno v:
東京情報大学研究論集. 9(2):53-61
この論文では、筆者は、真理論の部分とdoxa-論の部分を決定的に分離する解釈には賛成しない。我々の仮定は、パルメニデスはそのeonの概念を現象的世界の原理にまで発展させた、そし
Autor:
Hideaki, Iwano
Publikováno v:
東京情報大学研究論集. 5(2):1-17
Autor:
Hiroki Taniguchi, Hiroshi Iseki, Takanori Taira, Hiroshi Shirakawa, Hideaki Iwano, Yoshihiro Muragaki, Madoka Sugiura, Kiyoshi Naemura, Tomokatsu Hori, Kintomo Takakura
Publikováno v:
Journal of Japan Society of Computer Aided Surgery. 3:267-272
Autor:
Hideaki, Iwano
Publikováno v:
東京情報大学研究論集. 3(3):89-97
Autor:
Hideaki, Iwano
Publikováno v:
経営情報科学. 3(3):181-189
Autor:
Madoka Sugiura, Hiroshi Shirakawa, Kintomo Takakura, Hiroki Taniguchi, Takaomi Taira, Etsuko Kobayashi, Yoshihiro Muragaki, Hiroshi Iseki, Tomokatsu Horri, Kiyoshi Naemura, Hideaki Iwano
Publikováno v:
CARS 2002 Computer Assisted Radiology and Surgery ISBN: 9783642628443
We have introduced open MRI into the operating room. When taking intraoperative open MR (iMR) images conventionally, since it was impossible to have used a conventional head coil for diagnosis because of need of space, we used to wrap the body coil a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81f76ae4dbe4d056e38ea53db7ad5ddc
https://doi.org/10.1007/978-3-642-56168-9_24
https://doi.org/10.1007/978-3-642-56168-9_24
Publikováno v:
Applied Physics Letters. 57:1289-1291
AlGaAs/GaAs surface‐emitting laser diodes (SELDs) with distributed Bragg reflectors (DBRs) and current blocking layers are fabricated with the combination of a two‐step epitaxial growth and the reactive ion beam etching (RIBE) technique. An Al0.1
Autor:
Masato Mori Katsumi Mori, Tatsuya Asaka, Seiji Fujii, Mutsuo Ogura, Hideaki Iwano, Takumi Okada
Publikováno v:
Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials.
Publikováno v:
Applied Physics Letters. 60:21-22
Transverse‐mode characteristics of the distributed Bragg reflector‐surface emitting laser diode with buried heterostructure were investigated as a function of the cavity size. Stable, fundamental transverse‐mode operation was achieved for cavit
Publikováno v:
Electronics Letters. 26:18-19
A surface-emitting laser diode (SELD) with distributed Bragg reflector (DBR) and buried heterostructure (BH) is fabricated by the metalorganic chemical vapour deposition (MOCVD), reactive ion beam etching (RIBE) and liquid phase epitaxial (LPE) regro