Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Hideaki Ikoma, Hideaki Ikoma"'
Publikováno v:
Japanese Journal of Applied Physics. 35:L8
Relatively good-quality oxide of GaAs was grown using magnetically excited oxygen plasma (helicon wave) with substrate heating (300°C) or a mixture of Ar gas in oxygen. Post-thermal annealing at 400°C in oxygen substantially improved the capacitanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::696e759fcd72d295b71bd071e76de524
https://doi.org/10.1143/jjap.35.l8
https://doi.org/10.1143/jjap.35.l8
Publikováno v:
Japanese Journal of Applied Physics. 34:L968
High-quality oxide of InP having an excellent interface with InP was successfully grown with magnetically excited plasma oxidation of InP and annealing at 260°C for 15 min in \morO ambient. Outstanding capacitance-voltage (C-V) characteristics were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8178913d05aafab7c5df83359dd809d4
https://doi.org/10.1143/jjap.34.l968
https://doi.org/10.1143/jjap.34.l968
Autor:
Hidetoshi Tanemura, Hidetoshi Tanemura, Keisuke Kanazawa, Keisuke Kanazawa, Hideaki Ikoma, Hideaki Ikoma
Publikováno v:
Japanese Journal of Applied Physics; April 2000, Vol. 39 Issue: 4 p1629-1629, 1p
Autor:
Fumihito Oka, Fumihito Oka, Masayuki Tachikawa, Masayuki Tachikawa, Tatsuaki Tsukuda, Tatsuaki Tsukuda, Hideaki Ikoma, Hideaki Ikoma
Publikováno v:
Japanese Journal of Applied Physics; March 2000, Vol. 39 Issue: 3 p1013-1013, 1p
Publikováno v:
Japanese Journal of Applied Physics; March 2000, Vol. 39 Issue: 3 p1022-1022, 1p
Publikováno v:
Japanese Journal of Applied Physics; January 2000, Vol. 39 Issue: 1 p8-8, 1p
Autor:
Fumio Kasahara, Fumio Kasahara, Keisuke Kanazawa, Keisuke Kanazawa, Nariaki Okamoto, Nariaki Okamoto, Hideaki Ikoma, Hideaki Ikoma
Publikováno v:
Japanese Journal of Applied Physics; December 1999, Vol. 38 Issue: 12 p6597-6597, 1p
Autor:
Shinya Morikita, Shinya Morikita, Tomoyuki Motegi, Tomoyuki Motegi, Hideaki Ikoma, Hideaki Ikoma
Publikováno v:
Japanese Journal of Applied Physics; December 1999, Vol. 38 Issue: 12 pL1512-L1512, 1p
Publikováno v:
Japanese Journal of Applied Physics; April 1999, Vol. 38 Issue: 4 pL420-L420, 1p
Growth of "Oxide-Less" GaN Layer by Helicon-Wave Excited N2-Ar Plasma Treatment of Al/GaAs Structure
Autor:
Nariaki Okamoto, Nariaki Okamoto, Fumio Kasahara, Fumio Kasahara, Hideaki Ikoma, Hideaki Ikoma
Publikováno v:
Japanese Journal of Applied Physics; April 1999, Vol. 38 Issue: 4 pL424-L424, 1p