Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Hideaki Aochi"'
Autor:
Hidenori Miyagawa, Haruka Kusai, Riichiro Takaishi, Tomoya Kawai, Yuuichi Kamimuta, Toshiya Murakami, Keiko Ariyoshi, Takanori Asano, Masakazu Goto, Makoto Fujiwara, Yuichiro Mitani, Tomoyuki Obu, Hideaki Aochi
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bd4dad47e3945bcd5f3b32e5ba94edb
https://doi.org/10.7567/ssdm.2020.a-6-01
https://doi.org/10.7567/ssdm.2020.a-6-01
Autor:
Hidenori Miyagawa, Toshiya Murakami, Tomoya Kawai, Riichiro Takaishi, Masakazu Goto, Hideaki Aochi, Haruka Kusai, Yuuichi Kamimuta, Tomoyuki Obu, Takanori Asano, Keiko Ariyoshi, Makoto Fujiwara, Yuichiro Mitani
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
In order to improve the channel conductance of 3D flash memory cell, metal-assisted solid-phase single crystallization process has been demonstrated for the first time. Metal induced lateral crystallization (MILC) process is well-known for the thin f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45a8caf90bbf5c40efd9a262cb9bdf21
https://doi.org/10.1109/iedm19573.2019.8993556
https://doi.org/10.1109/iedm19573.2019.8993556
Autor:
Akihiro Nitayama, Hideaki Aochi
Publikováno v:
2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
We proposed Bit Cost Scalable (BiCS) technology in 2007 as a three-dimensional memory for the future ultra high density storage devices, which extremely reduce the bit costs by vertically stacking memory arrays with punch and plug process. We've appl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a2542666a98b923d2b4087fd091a401
https://doi.org/10.1109/vlsi-tsa.2013.6545626
https://doi.org/10.1109/vlsi-tsa.2013.6545626
Autor:
James Gardner Ryan, Naohiro Shoda, Tomio Katata, Stephen Bruce Brodsky, Hideaki Aochi, Makoto Honda
Publikováno v:
MRS Bulletin. 20:42-45
Collimated sputtering is a physical vapor deposition (PVD) method where a collimator is inserted between a conventional “full-face-erosion” sputtering target and a substrate (Figure 1). The collimator is a plate of hexagonal cells that acts as a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::826d1588e0be02322330350614440644
https://doi.org/10.1557/s0883769400045553
https://doi.org/10.1557/s0883769400045553
Autor:
Hideaki Aochi, Akihiro Nitayama
Publikováno v:
Proceedings of 2010 International Symposium on VLSI Technology, System and Application.
We've developed Bit Cost Scalable (BiCS) flash technology as a three-dimensional memory for the future ultra high density storage devices, which extremely reduces the chip costs by vertically stacking memory arrays with punch and plug process. We've
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7c9dfdf076bc6b94c2874d21e688cd06
https://doi.org/10.1109/vtsa.2010.5488917
https://doi.org/10.1109/vtsa.2010.5488917
Autor:
Yoshihisa Iwata, Ryota Katsumata, Takashi Maeda, Yoshimasa Mikajiri, Hideaki Aochi, Y. Nagata, Ryouhei Kirisawa, Masaru Kito, Makoto Honda, M. Kido, Yosuke Komori, Shigeto Oota, Megumi Ishiduki, Akihiro Nitayama, Yoshiaki Fukuzumi, Tomoko Fujiwara, Hiroyasu Tanaka
Publikováno v:
2009 IEEE International Electron Devices Meeting (IEDM).
An asymmetric source/drain profile for select gate and metal salicided control gate are successfully realized on Pipe-shaped Bit Cost Scalable (P-BiCS) Flash memory to achieve data storage device with excellent performance and reliability.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11f4e689e70a37ad6bf35015a443ca6a
https://doi.org/10.1109/iedm.2009.5424261
https://doi.org/10.1109/iedm.2009.5424261
Autor:
Hideaki Aochi
Publikováno v:
2009 IEEE International Memory Workshop.
In this presentation, recent reports on three dimensional non-volatile memories are reviewed and their pros and cons are discussed. BiCS (Bit Cost Scalable) flash technology is focused as one of the most promising candidates for the future ultra high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4d60cb4f57a414eff549f89fafffc38
https://doi.org/10.1109/imw.2009.5090581
https://doi.org/10.1109/imw.2009.5090581
Autor:
Ryota Katsumata, Yosuke Komori, Y. Nagata, Megumi Ishiduki, Masaru Kito, Hideaki Aochi, Hiroyasu Tanaka, Akihiro Nitayama, Yoshiaki Fukuzumi, M. Kido
Publikováno v:
2008 IEEE International Electron Devices Meeting.
Program and erase operation on NAND-string of Bit-Cost Scalable (BiCS) flash memory has been successfully achieved. High boost efficiency of floating pillars and ONON (block oxide/charge SiN/tunnel oxide/tunnel SiN) structure as a memory film stack i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47cfab4c1dcc198da43c4458916e39a6
https://doi.org/10.1109/iedm.2008.4796831
https://doi.org/10.1109/iedm.2008.4796831
Autor:
Hideaki Aochi, Adrian M. Ionescu
Publikováno v:
2008 IEEE International Electron Devices Meeting.
This session presents recent advances in 1T DRAM, standard DRAM and NOR flash memory. The 1st Paper by Ki-Whan Song et al., from Samsung demonstrates aggressively scaled 55 nm capacitor-less 1T DRAM cell transistor with non-overlap source and drain.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::598959396c09cb04d1d5b7ccfa27a755
https://doi.org/10.1109/iedm.2008.4796817
https://doi.org/10.1109/iedm.2008.4796817
Autor:
Hideaki Aochi, Yoshihisa Iwata, Ryota Katsumata, Y. Nagata, Hiroyasu Tanaka, Akihiro Nitayama, M. Kido, Yasuyuki Matsuoka, Yoshiaki Fukuzumi, Masaru Kito, Yosuke Komori, Megumi Ishiduki
Publikováno v:
Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e8c752297a21b64665e28052fb2e131
https://doi.org/10.7567/ssdm.2008.j-5-1
https://doi.org/10.7567/ssdm.2008.j-5-1