Zobrazeno 1 - 10
of 74
pro vyhledávání: '"Hickey, Danielle Reifsnyder"'
Autor:
Bachu, Saiphaneendra, Habis, Fatimah, Huet, Benjamin, Woo, Steffi Y., Miao, Leixin, Hickey, Danielle Reifsnyder, Kim, Gwangwoo, Trainor, Nicholas, Watanabe, Kenji, Taniguchi, Takashi, Jariwala, Deep, Redwing, Joan M., Wang, Yuanxi, Kociak, Mathieu, Tizei, Luiz H. G., Alem, Nasim
Achieving localized light emission from monolayer two-dimensional (2D) transition metal dichalcogenides (TMDs) embedded in the matrix of another TMD has been theoretically proposed but not experimentally proven. In this study, we used cathodoluminesc
Externí odkaz:
http://arxiv.org/abs/2406.10315
Autor:
Yu, Mingyu, Iddawela, Sahani Amaya, Wang, Jiayang, Hilse, Maria, Thompson, Jessica L., Hickey, Danielle Reifsnyder, Sinnott, Susan B, Law, Stephanie
GaSe is an important member of the post-transition metal chalcogenide family and is an emerging two-dimensional (2D) semiconductor material. Because it is a van der Waals material, it can be fabricated into atomic-scale ultrathin films, making it sui
Externí odkaz:
http://arxiv.org/abs/2403.12265
Autor:
Yu, Mingyu, Wang, Jiayang, Iddawela, Sahani A., McDonough, Molly, Thompson, Jessica L., Sinnott, Susan B, Hickey, Danielle Reifsnyder, Law, Stephanie
GaAs(111)B is a semiconductor substrate widely used in research and commercial fields due to its low cost, mature synthesis technology, and excellent properties for manufacturing electronic devices. It is not only used to grow three-dimensional (3D)
Externí odkaz:
http://arxiv.org/abs/2401.10425
Autor:
Yi, Hemian, Hu, Lun-Hui, Zhao, Yi-Fan, Zhou, Ling-Jie, Yan, Zi-Jie, Zhang, Ruoxi, Yuan, Wei, Wang, Zihao, Wang, Ke, Hickey, Danielle Reifsnyder, Richardella, Anthony R., Singleton, John, Winter, Laurel E., Wu, Xianxin, Chan, Moses H. W., Samarth, Nitin, Liu, Chao-Xing, Chang, Cui-Zu
Publikováno v:
Nature Commun. 14,7119 (2023)
Over the last decade, the possibility of realizing topological superconductivity (TSC) has generated much excitement, mainly due to the potential use of its excitations (Majorana zero modes) in a fault-tolerant topological quantum computer 1,2. TSC c
Externí odkaz:
http://arxiv.org/abs/2310.09190
Autor:
Li, Cequn, Zhao, Yi-Fan, Vera, Alexander, Lesser, Omri, Yi, Hemian, Kumari, Shalini, Yan, Zijie, Dong, Chengye, Bowen, Timothy, Wang, Ke, Wang, Haiying, Thompson, Jessica L., Watanabe, Kenji, Taniguchi, Takashi, Hickey, Danielle Reifsnyder, Oreg, Yuval, Robinson, Joshua A., Chang, Cui-Zu, Zhu, Jun
The introduction of superconductivity to the Dirac surface states of a topological insulator leads to a topological superconductor, which may support topological quantum computing through Majorana zero modes. The development of a scalable material pl
Externí odkaz:
http://arxiv.org/abs/2205.02806
Autor:
Yi, Hemian, Hu, Lun-Hui, Wang, Yuanxi, Xiao, Run, Cai, Jiaqi, Hickey, Danielle Reifsnyder, Dong, Chengye, Zhao, Yi-Fan, Zhou, Ling-Jie, Zhang, Ruoxi, Richardella, Anthony R., Alem, Nasim, Robinson, Joshua A., Chan, Moses H. W., Xu, Xiaodong, Samarth, Nitin, Liu, Chao-Xing, Chang, Cui-Zu
Publikováno v:
Nature Mater. 21, 1366(2022)
A topological insulator (TI) interfaced with an s-wave superconductor has been predicted to host an unusual form of superconductivity known as topological superconductivity (TSC). Molecular beam epitaxy (MBE) has been the primary approach in the scal
Externí odkaz:
http://arxiv.org/abs/2112.14623
Autor:
Huang, Ke, Fu, Hailong, Hickey, Danielle Reifsnyder, Alem, Nasim, Lin, Xi, Watanabe, Kenji, Taniguchi, Takashi, Zhu, Jun
Publikováno v:
Phys. Rev. X 12, 031019 (2022); Erratum: Phys. Rev. X 12, 049901(E) (2022)
A two-dimensional electron system placed in a magnetic field develops Landau levels, where strong Coulomb interactions lead to the appearance of many-body correlated ground states. Quantum numbers similar to the electron spin enable the understanding
Externí odkaz:
http://arxiv.org/abs/2105.07058
Autor:
Hickey, Danielle Reifsnyder, Nayir, Nadire, Chubarov, Mikhail, Choudhury, Tanushree H., Bachu, Saiphaneendra, Miao, Leixin, Wang, Yuanxi, Qian, Chenhao, Crespi, Vincent H., Redwing, Joan M., van Duin, Adri C. T., Alem, Nasim
Engineering atomic-scale defects is crucial for realizing wafer-scale, single-crystalline transition metal dichalcogenide monolayers for electronic devices. However, connecting atomic-scale defects to larger morphologies poses a significant challenge
Externí odkaz:
http://arxiv.org/abs/2006.11668
Autor:
Chubarov, Mikhail, Choudhury, Tanushree H., Hickey, Danielle Reifsnyder, Bachu, Saiphaneendra, Zhang, Tianyi, Sebastian, Amritanand, Bansa, Anushka, Das, Saptarshi, Terrones, Mauricio, Alem, Nasim, Redwing, Joan M.
Realization of wafer-scale single-crystal films of transition metal dichalcogenides (TMDs) such as tungsten sulfide requires epitaxial growth and coalescence of oriented domains to form a continuous monolayer. The domains must be oriented in the same
Externí odkaz:
http://arxiv.org/abs/2006.10952
Autor:
Hickey, Danielle Reifsnyder, Wu, Ryan J., Lee, Joon Sue, Azadani, Javad G., Grassi, Roberto, DC, Mahendra, Wang, Jian-Ping, Low, Tony, Samarth, Nitin, Mkhoyan, K. Andre
Publikováno v:
Phys. Rev. Mater. 4, 011201(R) (2020)
Topological insulator (TI) materials are exciting candidates for integration into next-generation memory and logic devices because of their potential for efficient, low-energy-consumption switching of magnetization. Specifically, the family of bismut
Externí odkaz:
http://arxiv.org/abs/1808.03719