Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Hicham Helal"'
Publikováno v:
Applied Sciences, Vol 14, Iss 11, p 4506 (2024)
An electronic nose, designed to replicate human olfaction, captures distinctive ‘fingerprint’ data from mixed gases or odors. Comprising a gas sensing system and an information processing unit, electronic noses have evolved significantly since th
Externí odkaz:
https://doaj.org/article/1d3a3e0f74ef4745b04ca576aff4b58a
Publikováno v:
Crystals, Vol 14, Iss 4, p 306 (2024)
Solid oxide fuel cells (SOFCs) have emerged as promising candidates for efficient and environmentally friendly energy conversion technologies. Their high energy conversion efficiency and fuel flexibility make them particularly attractive for various
Externí odkaz:
https://doaj.org/article/bd545e278fbc476ea78a9d801af76616
Publikováno v:
Nanomaterials, Vol 14, Iss 4, p 359 (2024)
Low-dimensional metal oxides have drawn significant attention across various scientific domains due to their multifaceted applications, particularly in the field of environment monitoring. Their popularity is attributed to a constellation of unique p
Externí odkaz:
https://doaj.org/article/8e044f88f91e4a24ab5e43c4ed02287a
Autor:
Souad Benykrelef, Sedik Mansouri, Hicham Helal, Abdelaziz Rabehi, Abdelaziz Joti, Zineb Benamara
Publikováno v:
The Journal of Engineering and Exact Sciences. 9:15855-01e
This research aims to study the impact of metal work function ?m on the I–V characteristics of a n-GaAs Schottky nanowire structure, using 3D Silvaco-Atlas software. The electrical characteristics have been performed in a wide temperature range of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ea8158882dfcedac9f820fe7dc0e23d
https://doi.org/10.18540/jcecvl9iss4pp15855-01e
https://doi.org/10.18540/jcecvl9iss4pp15855-01e
Autor:
B. Akkal, Abdelmalek Douara, Abdelaziz Rabehi, Zineb Benamara, Abderrezzaq Ziane, M. Amrani, Bachir Nail, Hicham Helal
Publikováno v:
Semiconductors. 54:1398-1405
This work deals with estimation of the Schottky diode (Au|GaN|GaAs) optimal parameters. For this purpose, advanced swarm intelligence (SI) algorithms have been applied, i.e., Harris hawks optimization, ant lion optimizer (ALO), grey wolf optimizer, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f03cbc29012222476b2688f81e7f964
https://doi.org/10.1134/s1063782620110214
https://doi.org/10.1134/s1063782620110214
Publikováno v:
Journal of Electronic Materials. 49:6308-6316
Based on a PC1D (Personal Computer One-Dimensional) simulator device, we have investigated three solar prototypes of gallium arsenide structures labeled as SPI, SPII and SPIII, under AM1.5G condition at one sun irradiation. The PC1D simulation predic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd697cb746ba1741845ddd682f82741f
https://doi.org/10.1007/s11664-020-08417-y
https://doi.org/10.1007/s11664-020-08417-y
Autor:
Abdelaziz, Rabehi, Abdelhalim, Rabehi, Abdelmalek, Douara, Hicham, Helal, Oussama, Baitiche, Boudali, Akkal, Mohammed, Amrani, Schahrazade, Tizi, Zineb, Benamara
Проведено електричне дослідження Ni i Ti металевих контактів Шотткі на епітаксійних шарах n-6H-SiC методом вольт-амперної характеристики. Ni/6H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2001::00e6f85584b1996fafc7f9b87c418d61
https://essuir.sumdu.edu.ua/handle/123456789/90438
https://essuir.sumdu.edu.ua/handle/123456789/90438
Autor:
Hicham Helal, Zineb Benamara, Elisabetta Comini, Arslane Hatem Kacha, Abdelaziz Rabehi, Kamel Khirouni, Guillaume Monier, Christine Robert-Goumet, Manuel Dominguez
Publikováno v:
The European Physical Journal Plus
The European Physical Journal Plus, 2022, 137 (4), pp.450. ⟨10.1140/epjp/s13360-022-02672-0⟩
The European Physical Journal Plus, 2022, 137 (4), pp.450. ⟨10.1140/epjp/s13360-022-02672-0⟩
In this paper, two Schottky structures of Au/n-GaAs (sample A) and Au/0.8 nm-GaN/n-GaAs (sample B) were fabricated and electrically characterized by current–voltage measurements at different temperatures. Two models, a classical one and another pre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::62749c64e5eea1062fe4f30efbf3035e
https://hdl.handle.net/11379/572530
https://hdl.handle.net/11379/572530
Autor:
Hassen Maaref, Hicham Helal, Zineb Benamara, Marwa Ben Arbia, Abdelaziz Rabehi, Abdallah Chabane Chaouche
Publikováno v:
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. 34
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::900d0d791e54542cd3cf8b157ca3cd85
https://doi.org/10.1002/jnm.2916
https://doi.org/10.1002/jnm.2916
Autor:
Kamel Khirouni, Guillaume Monier, Abdelaziz Rabehi, Zineb Benamara, Arslane Hatem Kacha, M. A. Wederni, Sabrine Mourad, Hicham Helal, Christine Robert-Goumet
Passivation of interface states in the Schottky barrier is an approach to enhance the properties of the Schottky devices. In this work, Au/0.8nm-GaN/n-GaAs Schottky structure is studied electrically in a wide temperature range. With increasing temper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7e33e46100e7139d1a59f25f95f711a
https://doi.org/10.21203/rs.3.rs-220299/v1
https://doi.org/10.21203/rs.3.rs-220299/v1