Zobrazeno 1 - 3
of 3
pro vyhledávání: '"HgCdTe пленки"'
Autor:
M. V. Yakushev, Z. Swiatek, O. Yu. Bonchyk, H. V. Savytskyy, A. G. Korotaev, K. D. Mynbaev, A. V. Voitsekhovskii, N. N. Mikhailov, Jerzy Morgiel, Ihor I. Syvorotka, D. V. Marin, Rafal Jakiela, V. S. Varavin, I. I. Izhnin, O. I. Fitsych
Publikováno v:
Applied nanoscience. 2020. Vol. 10, № 12. P. 4971-4976
Optical reflectance and bright-field and high-resolution transmission electron microscopy studies of radiation damage induced by implantation of arsenic ions with 190 keV and 350 keV energy and 1014 cm–2 fluence in molecular-beam epitaxy-grown Hg0.
Autor:
I. I. Izhnin, H. V. Savytskyy, A. G. Korotaev, O. Yu. Bonchyk, K. D. Mynbaev, O. I. Fitsych, A.V. Voitsekhovsky, Ihor I. Syvorotka, N. N. Mikhailov, Z. Swiatek, S. A. Dvoretsky, M. V. Yakushev, V. S. Varavin, V. G. Remesnik, Jerzy Morgiel
Publikováno v:
Infrared physics and technology. 2019. Vol. 98. P. 230-235
The Hall-effect/electrical conductivity measurements and mobility spectrum analysis (MSA) have been used for the study of the profiles of different electron species and corresponding defects induced in a HgCdTe film by implantation of arsenic ions. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::168171e5e0d0a62c1fbe4025b1753289
http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000673792
http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000673792
Publikováno v:
Прикладная физика. 2018. № 4. С. 43-48
Вольт-фарадные характеристики (ВФХ) МДП-систем на основе nBn-структуры из HgCdTe, выращенной методом молекулярно-лучевой эпитаксии на подлож
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3810::23b5900c1c91bc23471de194029d118e
http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000737134
http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000737134