Zobrazeno 1 - 10
of 6 228
pro vyhledávání: '"HfO2"'
Publikováno v:
Yuanzineng kexue jishu, Vol 8, Iss 58, Pp 1716-1724 (2024)
Several new types of neutron absorbers with high melting points and non-alpha emit characteristics have been proposed by France and Japan in recent years. After comparison of the fuel assembly reactivity inserted with different rare earth oxide, the
Externí odkaz:
https://doaj.org/article/3ab8ad4ee2034902ace138bf2c156835
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-12 (2024)
Abstract Pioneering flexible micro-supercapacitors, designed for exceptional energy and power density, transcend conventional storage limitations. Interdigitated electrodes (IDEs) based on laser-induced graphene (LIG), augmented with metal-oxide modi
Externí odkaz:
https://doaj.org/article/80052c666d7f47cd8f696db3c48114b0
Akademický článek
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Akademický článek
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Autor:
Ioana Dascalescu, Catalin Palade, Adrian Slav, Ionel Stavarache, Ovidiu Cojocaru, Valentin Serban Teodorescu, Valentin-Adrian Maraloiu, Ana-Maria Lepadatu, Magdalena Lidia Ciurea, Toma Stoica
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-11 (2024)
Abstract SiGeSn nanocrystals (NCs) in oxides are of considerable interest for photo-effect applications due to the fine-tuning of the optical bandgap by quantum confinement in NCs. We present a detailed study regarding the silicon germanium tin (SiGe
Externí odkaz:
https://doaj.org/article/b5b9061060d04fdda2babc0411e23920
Autor:
Federico Vittorio Lupo, Mauro Mosca, Sarunas Bagdzevicius, Rashmi Rani, William Maudez, Estelle Wagner, Maria Pia Casaletto, Salvatore Basile, Giacomo Benvenuti, Isodiana Crupi, Roberto Macaluso
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 508-515 (2024)
We present chemical beam vapor deposition (CBVD) as a valuable technique for the fabrication of good quality HfO2-based memristors. This deposition technique gives the opportunity to rapidly screen material properties in combinatorial mode and to rep
Externí odkaz:
https://doaj.org/article/416fb83b830448289217c78532a817e4
Autor:
Jaewook Lee, Kun Yang, Ju Young Kwon, Ji Eun Kim, Dong In Han, Dong Hyun Lee, Jung Ho Yoon, Min Hyuk Park
Publikováno v:
Nano Convergence, Vol 10, Iss 1, Pp 1-39 (2023)
Abstract HfO2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices owing to its excellent electrical properties and compatibility with complementary metal oxide semiconductor technology based on mature fabrication proc
Externí odkaz:
https://doaj.org/article/82d923d085cc40b4a03b132e99929cb3
Autor:
Katrina Laganovska, Virginija Vitola, Ernests Einbergs, Ivita Bite, Aleksejs Zolotarjovs, Madara Leimane, Gatis Tunens, Krisjanis Smits
Publikováno v:
Ceramics, Vol 7, Iss 1, Pp 15-28 (2023)
This study compares HfO2 ceramics synthesized using sol–gel and combustion methods, emphasizing the impact of the method of synthesis on the resulting properties of the material. The research findings illustrate morphological differences between so
Externí odkaz:
https://doaj.org/article/89be886bd9294363baa6a51512977ef9
Autor:
So-Won Kim, Jae-Hoon Yoo, Won-Ji Park, Chan-Hee Lee, Joung-Ho Lee, Jong-Hwan Kim, Sae-Hoon Uhm, Hee-Chul Lee
Publikováno v:
Nanomaterials, Vol 14, Iss 20, p 1686 (2024)
We aimed to fabricate reliable memory devices using HfO2, which is gaining attention as a charge-trapping layer material for next-generation NAND flash memory. To this end, a new atomic layer deposition process using sequential remote plasma (RP) and
Externí odkaz:
https://doaj.org/article/a009560ee3c94ae9b861118dcb7fa76d
Publikováno v:
Photonics, Vol 11, Iss 10, p 976 (2024)
Laser damage in films under long-term high-temperature conditions is a significant concern for advancing laser applications. This study focused on HfO2 films prepared using the sol–gel method with HfCl4 as a precursor. It examined the effects of te
Externí odkaz:
https://doaj.org/article/367be90357514ad693fe2279ce272515