Zobrazeno 1 - 10
of 406
pro vyhledávání: '"Hf0.5Zr0.5O2"'
Autor:
Kuan Liu, Kai Liu, Xingchang Zhang, Feng Jin, Jie Fang, Enda Hua, Huan Ye, Jinfeng Zhang, Zhengguo Liang, Qiming Lv, Wenbin Wu, Chao Ma, Lingfei Wang
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 10, Pp n/a-n/a (2024)
Abstract Hafnium‐oxide‐based ferroelectrics have garnered considerable research interest, primarily for their robust ferroelectricity at the nanoscale and their high compatibility with complementary metal‐oxide‐semiconductors processes. Howev
Externí odkaz:
https://doaj.org/article/e0200d6aea3b4fab97f13bd9702c3faf
Autor:
Sang Won An, Seong Bin Bae, Beomjun Kim, Yoon Ki Kim, Jaeseung Kim, Tae Hyun Jung, Jae Heon Lee, Sang Woo Lee, Yu Bin Park, Hyunjung Kim, Hyobin Yoo, Sang Mo Yang
Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 21, Pp n/a-n/a (2024)
Abstract Recently, HfO2‐based ferroelectric thin films have attracted widespread interest in developing next‐generation nonvolatile memories. To form a metastable ferroelectric orthorhombic phase in HfO2, a post‐annealing process is typically n
Externí odkaz:
https://doaj.org/article/3f71b7f4aa1840dd8cc8e70536e6308f
Autor:
Changfan Ju, Binjian Zeng, Ziqi Luo, Zhibin Yang, Puqi Hao, Luocheng Liao, Qijun Yang, Qiangxiang Peng, Shuaizhi Zheng, Yichun Zhou, Min Liao
Publikováno v:
Journal of Materiomics, Vol 10, Iss 2, Pp 277-284 (2024)
Hf0.5Zr0.5O2 (HZO) ferroelectric thin films have gained significant attention for the development of next-generation ferroelectric memories by complementary-metal-oxide semiconductor (CMOS) back-end-of-line (BEOL) processing, due to their relatively
Externí odkaz:
https://doaj.org/article/e1c66f6c46f24303af4852d15c97d7eb
Publikováno v:
IEEE Access, Vol 12, Pp 71598-71605 (2024)
Metal-Ferroelectric-Metal (MFM) devices possessing high remanent polarizations ( $2P_{r}$ ) of 84 and $73~\mu $ C/cm2 are demonstrated with nearly epitaxially grown Hf0.5Zr0.5O2 (HZO) films on (001) n+-Si(3E19/cm $^{3}$ ) and n+-Ge(3E20/cm $^{3}$ ) s
Externí odkaz:
https://doaj.org/article/1a56f35ad2104d19bbf855e3e32296e9
Autor:
Xiang Zhou, Haoyang Sun, Jiachen Li, Xinzhe Du, He Wang, Zhen Luo, Zijian Wang, Yue Lin, Shengchun Shen, Yuewei Yin, Xiaoguang Li
Publikováno v:
Journal of Materiomics, Vol 10, Iss 1, Pp 210-217 (2024)
Flexible hafnia-based ferroelectric memories are arousing much interest with the ever-growing demands for nonvolatile data storage in wearable electronic devices. Here, high-quality flexible Hf0.5Zr0.5O2 membranes with robust ferroelectricity were fa
Externí odkaz:
https://doaj.org/article/ccfcf07b893e4a4b8049c56d93e0d931
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 1, Pp n/a-n/a (2024)
Abstract In this study, the domain switching mechanism of ferroelectric HZO thin films is investigated by analyzing the bulk charge of a graphene field‐effect transistor with an HZO dielectric device by using a pulsed IV measurement method. The dom
Externí odkaz:
https://doaj.org/article/2d2a08ac013f43dba2ec9ea1d23a3991
Akademický článek
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Autor:
Guan-Hua Chen, Yu-Rui Chen, Zefu Zhao, Jia-Yang Lee, Yun-Wen Chen, Yifan Xing, Rachit Dobhal, C. W. Liu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 752-758 (2023)
To improve the crystallinity and phase composition of the Hf0.5Zr0.5O2 films, the effects of annealing temperature on metal-ferroelectric-metal devices are studied by electrical measurements, nanobeam electron diffraction (NBD), and TEM. Forming gas
Externí odkaz:
https://doaj.org/article/0d5acf9cc4164bc4b4c0cf65b40af955
Autor:
Zhaohao Zhang, Yudong Li, Jing Xu, Bo Tang, Jinjuan Xiang, Junjie Li, Qingzhu Zhang, Zhenhua Wu, Huaxiang Yin, Jun Luo, Wenwu Wang
Publikováno v:
Nanoscale Research Letters, Vol 17, Iss 1, Pp 1-6 (2022)
Abstract In this work, extremely thin silicon-on-insulator field effective transistors (ETSOI FETs) are fabricated with an ultra-thin 3 nm ferroelectric (FE) hafnium zirconium oxides (Hf0.5Zr0.5O2) layer. Furthermore, the subthreshold characteristics
Externí odkaz:
https://doaj.org/article/4bed1d575aeb40c099cad1f7936c5b36
Publikováno v:
BIO Web of Conferences, Vol 129, p 24040 (2024)
Externí odkaz:
https://doaj.org/article/c7644b0b14c945d99b98fa179440f4a1