Zobrazeno 1 - 10
of 183
pro vyhledávání: '"Hexachlorodisilane"'
Autor:
Philipp N. Plessow, Krzysztof Woźniak, Peter Hofmann, Phillip Iain Jolly, Damian Trzybiński, Łukasz Kapuśniak
Publikováno v:
Organometallics
Organometallics, 40, 693-701
Organometallics, 40, 693-701
The metal-free reduction of a range of phosphine(V) oxides employing oxalyl chloride as an activating agent and hexachlorodisilane as reducing reagent has been achieved under mild reaction conditions. The method was successfully applied to the reduct
Autor:
Ram Ramachandran, Sheng-Hsun Wang, Cheng-Chieh Wang, Chien-Ho Liu, Mo-Geng Chin, Jenq-Renn Chen, Hsiao-Yun Tsai, Yu-Jhen Lin, Eugene Y. Ngai
Publikováno v:
ACS Omega, Vol 4, Iss 1, Pp 1416-1424 (2019)
ACS Omega
ACS Omega
In this work, the shock sensitivity of hexachlorodisilane (HCDS) hydrolysis products was studied. The hydrolysis conditions included vapor and liquid HCDS hydrolysis in moist air. Shock sensitivity was determined by using a Fall hammer apparatus. Ext
Publikováno v:
Zeitschrift für Naturforschung B.
The λ 6Si-silicate [Cs(18-crown-6)]2[Si(OSO2CH3)6] (1) was synthesized by treatment of Si2Cl6 with Cs[OSO2CH3] in the presence of 18-crown-6. Compound 1 is the first example of a λ 6Si-silicate with a methanesulfonate ligand. It was characterized b
Autor:
Byung Keun Hwang, Gary Goodman, Lanxia Cheng, Harrison Sejoon Kim, Aswin L. N. Kondusamy, Xin Meng, Antonio T. Lucero, Si Joon Kim, Jiyoung Kim, Alan S. Wan, Su Min Hwang, Young-Chul Byun, Telgenhoff Michael D, Joy S. Lee, Robert M. Wallace
Publikováno v:
ACS Applied Materials & Interfaces. 10:44825-44833
Correlations between physical properties linking film quality with wet etch rate (WER), one of the leading figures of merit, in plasma-enhanced atomic layer deposition (PEALD) grown silicon nitride (SiNx) films remain largely unresearched. Achieving
Publikováno v:
Industrial & Engineering Chemistry Research. 57:10354-10364
The hydrolysis products of hexachlorodisilane (HCDS) show common heat sensitivity and can become shock sensitive under certain conditions. Study of the shock sensitivity has been difficult due to the unpredictable nature of this phenomenon. We have i
Autor:
Jiyoung Kim, Jeanette Young, Su Min Hwang, Young-Chul Byun, Telgenhoff Michael D, Xiaobing Zhou, Joy S. Lee, Byung Keun Hwang, Xin Meng, Harrison Sejoon Kim, Antonio T. Lucero
Publikováno v:
ACS Applied Materials & Interfaces. 10:14116-14123
In this work, a novel chlorodisilane precursor, pentachlorodisilane (PCDS, HSi2Cl5), was investigated for the growth of silicon nitride (SiNx) via hollow cathode plasma-enhanced atomic layer deposition (PEALD). A well-defined self-limiting growth beh
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Autor:
Hui-Chu Tai, Zhi-Xuan Lin, Thanh-Trung Nguyen, Jenq-Renn Chen, Yu-Jhen Lin, Eugene Y. Ngai, Hsiao-Yun Tsai
Publikováno v:
Journal of Loss Prevention in the Process Industries. 71:104455
In this work, the effects of potassium hydroxide (KOH) on friction and shock sensitivity of the hexachlorodisialne hydrolysis products were studied. A wide range of KOH content, from 0.02 to 21.5 wt%, in the mixture of KOH and HCDS hydrolyzed deposit
Publikováno v:
Journal of the Korean Ceramic Society. 54:443-447
Akademický článek
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