Zobrazeno 1 - 5
of 5
pro vyhledávání: '"HeungSoo Choi"'
Autor:
Devendra K. Sadana, Brock Mendoza, John G. Gaudiello, Ankit Jain, Shravan Matham, Heungsoo Choi, Sean Teehan, Curtis Durfee, Martin Plihal, Stephen W. Bedell
Publikováno v:
2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Historically, haze metrology on KLA-Tencor Surfscan® unpatterned wafer inspection systems is the preferred inline non-destructive method for ascertaining crystal quality of epitaxial deposited films. However, this metrology is limited to unpatterned
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71db54515d5ca099eecae45f66f9eda1
https://doi.org/10.1109/asmc.2019.8791801
https://doi.org/10.1109/asmc.2019.8791801
Defect detection strategies and process partitioning for SE EUV patterning (Conference Presentation)
Autor:
Nelson Felix, Barry Saville, Corey Lemley, Bassem Hamieh, Christopher F. Robinson, Shinichiro Kawakami, Jeffrey C. Shearer, Chet Lenox, Yann Mignot, Takeshi Shimoaoki, Eric Liu, Hiroshi Ichinomiya, Koichiro Tanaka, Ankit Jain, Koichi Hontake, Shravan Matham, Heungsoo Choi, John C. Arnold, Luciana Meli, Anuja De Silva, Benjamin D. Briggs, Ko Akiteru, Hashimoto Yusaku, Lior Huli, Akiko Kai, Dave Hetzer, Karen Petrillo
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IX.
The key challenge for enablement of a 2nd node of single-expose EUV patterning is understanding and mitigating the patterning-related defects that narrow the process window. Typical in-line inspection techniques, such as broadband plasma (291x) and e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90ac805d2ce705c9b9f7b4ac04d3dfcc
https://doi.org/10.1117/12.2297362
https://doi.org/10.1117/12.2297362
Autor:
YoungHun Kwon, Vijay Ramani, Ki-Ho Kim, JunWoo Lee, YoungSun Oh, HakY Yoon, JongPil Kim, HeungSoo Choi, Satya Kurada, Grant Shoji, Min-Ho Kim, Keebum Jung, Vikram Gunda, HyeongJu Choi, Ho-Seong Kang
Publikováno v:
ECS Transactions. 27:209-214
With advanced design rules, yield learning challenges have scaled up. Identifying and analyzing yield killer defects are one of the major part of the issue. In this work, an advanced Inspection platform - '2810 DUV Broadband Brightfield' Inspection t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2aa34a2d41251372e9025667c5fa181
https://doi.org/10.1149/1.3360621
https://doi.org/10.1149/1.3360621
Autor:
Chet Lenox, Bassem Hamieh, Corey Lemley, Hiroshi Ichinomiya, Christopher F. Robinson, Ankit Jain, Ko Akiteru, Yann Mignot, Lior Huli, Karen Petrillo, Jeffrey C. Shearer, Shinichiro Kawakami, Anuja De Silva, Akiko Kai, Takeshi Shimoaoki, Koichiro Tanaka, Benjamin D. Briggs, Eric Liu, Barry Saville, John C. Arnold, Shravan Matham, Koichi Hontake, Hashimoto Yusaku, Heungsoo Choi, Luciana Meli, Dave Hetzer, Nelson Felix
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 18:1
The key challenge for enablement of a second node of single-expose EUV patterning is understanding and mitigating the patterning-related defects that narrow the process window. Typical in-line inspection techniques, such as broadband plasma and e-bea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7b6ce232b2064c5ae853a07ed024c65
https://doi.org/10.1117/1.jmm.18.1.011006
https://doi.org/10.1117/1.jmm.18.1.011006
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXIII.
Defect inspection is a challenge in the edge of wafer region and several new inspection tools and techniques have come to the market to fulfill this inspection need. Current inspection methodology excludes inspection of partial die located at the waf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da10f71b0bab69810ce58d4d561e1629
https://doi.org/10.1117/12.813994
https://doi.org/10.1117/12.813994