Zobrazeno 1 - 10
of 3 284
pro vyhledávání: '"Heteroepitaxy"'
Autor:
Behzad Jazizadeh, Maksym Myronov
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-9 (2024)
Abstract Residual strain in an epilayer grown on a foreign wafer induces epiwafer’s bow, that is often considered undesirable. Wafer bow however, can be advantageous because both the direction and magnitude of strain are vital for the fabrication o
Externí odkaz:
https://doaj.org/article/8bc2af9f0d434125b227d7e4b9cf1cd5
Autor:
Jian Li, Chen Jiang, Hao Liu, Yang Zhang, Hao Zhai, Xin Wei, Qi Wang, Gang Wu, Chuanchuan Li, Xiaomin Ren
Publikováno v:
Advanced Photonics Research, Vol 5, Iss 7, Pp n/a-n/a (2024)
A silicon‐based room temperature (RT) continuous wave (CW) operation quantum well (QW) laser emitting at 850 nm is reported in this article. By applying the dislocation filter superlattice, the threading dislocation density of the GaAs pseudosubstr
Externí odkaz:
https://doaj.org/article/ac4d4a89d57548d1bdc63b6cefe4512e
Publikováno v:
Inorganics, Vol 12, Iss 8, p 207 (2024)
Developing cost-effective methods to synthesize large-size GaN films remains a challenge owing to the high dislocation density during heteroepitaxy. Herein, AlGaN/GaN HEMTs were grown on 6- and 8-inch Si(111) substrates using metal–organic chemical
Externí odkaz:
https://doaj.org/article/e125d273ffd04c34aebbc764d17b98f3
Autor:
Christoph E. Nebel
Publikováno v:
Functional Diamond, Vol 3, Iss 1 (2023)
In the future, electronic parts will penetrate everything, generating a new and fast-growing pollution problem. Future devices therefore need to be environmentally friendly with strong recycling options. A paradigm change in semiconductor technology
Externí odkaz:
https://doaj.org/article/dbafadcf70914cd9b2147f27961cbb33
Publikováno v:
Functional Diamond, Vol 2, Iss 1, Pp 215-235 (2022)
As one of the representatives of carbon-based semiconductors, diamond is called the “Mount Everest” of electronic materials. To maximize its properties and realize its industrial applications, the fabrication of wafer-scale high-quality diamonds
Externí odkaz:
https://doaj.org/article/04b2207e42e64549a5fa6cccbdc17853
Autor:
V.A. Lapin, I.V. Kasyanov
Publikováno v:
Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов, Iss 14, Pp 168-175 (2022)
InAlN films on Si (111) were obtained by the ion-beam deposition with various technological growth parameters. The results of the study of grown films by the scanning electron microscopy were used to identify the conditions for obtaining InAlN contin
Externí odkaz:
https://doaj.org/article/24cc54f546a5446d84c15e67f00c69a3
Autor:
Liu Zhetong, Liu Bingyao, Chen Zhaolong, Yang Shenyuan, Liu Zhiqiang, Wei Tongbo, Gao Peng, Liu Zhongfan
Publikováno v:
National Science Open, Vol 2 (2023)
Heteroepitaxy can reduce the cost and widen the application range of semiconductor film synthesis and device fabrication. However, the lattice and thermal expansion coefficient mismatches between epilayers and substrates limit the improvement of crys
Externí odkaz:
https://doaj.org/article/8a7eca1c0f814603b67c0aa90e3dee0f
Autor:
Vasileiadis Isaak, Scheuer Laura, Karfaridis Dimitrios, Dimitrakopulos George, Papaioannou Evangelos, Kehagias Thomas
Publikováno v:
BIO Web of Conferences, Vol 129, p 22015 (2024)
Externí odkaz:
https://doaj.org/article/808bab072f3c46839a394b4bdeec0970
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