Zobrazeno 1 - 10
of 799
pro vyhledávání: '"Hesjedal, T."'
Autor:
Banerjee, N., Bell, C., Ciccarelli, C., Hesjedal, T., Johnson, F., Kurebayashi, H., Moore, T. A., Moutafis, C., Stern, H. L., Vera-Marun, I. J., Wade, J., Barton, C., Connolly, M. R., Curson, N. J., Fallon, K., Fisher, A. J., Gangloff, D. A., Griggs, W., Linfield, E., Marrows, C. H., Rossi, A., Schindler, F., Smith, J., Thomson, T., Kazakova, O.
This Roadmap provides an overview of the critical role of materials in exploiting spin and topology for next-generation quantum technologies including computing, sensing, information storage and networking devices. We explore the key materials system
Externí odkaz:
http://arxiv.org/abs/2406.07720
Autor:
Hicken, T. J., Wilson, M. N., Salman, Z., Zhang, S. L., Holt, S. J. R., Prokscha, T., Suter, A., Pratt, F. L., van der Laan, G., Hesjedal, T., Lancaster, T.
Skyrmion-hosting multilayer stacks are promising avenues for applications, although little is known about the depth dependence of the magnetism. We address this by reporting the results of circular dichroic resonant elastic x-ray scattering (CD-REXS)
Externí odkaz:
http://arxiv.org/abs/2210.06070
Autor:
Gu, X., Chen, C., Wei, W. S., Liu, J. Y., Du, X., Pei, D., Zhou, J. S., Xu, R. Z., Yin, Z. X., Zhao, W. X., Li, Y. D., Jozwiak, C., Bostwick, A., Rotenberg, E., Backes, D., Veiga, L. S. I., Dhesi, S., Hesjedal, T., van der Laan, G., Du, H. F., Jiang, W. J., Qi, Y. P., Li, G., Shi, W. J., Liu, Z. K., Chen, Y. L., Yang, L. X.
Crystal geometry can greatly influence the emergent properties of quantum materials. As an example, the kagome lattice is an ideal platform to study the rich interplay between topology, magnetism, and electronic correlation. In this work, combining h
Externí odkaz:
http://arxiv.org/abs/2203.10542
Publikováno v:
Appl. Phys. Lett. 117, 150502 (2020)
Three-dimensional topological insulators (TIs) are a perfectly tuned quantum-mechanical machinery in which counter-propagating and oppositely spin-polarized conduction channels balance each other on the surface of the material. This topological surfa
Externí odkaz:
http://arxiv.org/abs/2105.00486
Autor:
Gladczuk, L., Dluzewski, P., Lasek, K., Aleshkevych, P., Burn, D. M., van der Laan, G., Hesjedal, T.
Publikováno v:
Phys. Rev. B 103, 064416 (2021)
Heterostructures composed of ferromagnetic layers that are mutually interacting through a nonmagnetic spacer are at the core of magnetic sensor and memory devices. In the present study, layer-resolved ferromagnetic resonance was used to investigate t
Externí odkaz:
http://arxiv.org/abs/2101.08157
Akademický článek
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Autor:
Duffy, L. B., Steinke, N. -J., Krieger, J. A., Figueroa, A. I., Kummer, K., Lancaster, T., Giblin, S. R., Pratt, F. L., Blundell, S. J., Prokscha, T., Suter, A., Langridge, S., Strocov, V. N., Salman, Z., van der Laan, G., Hesjedal, T.
Publikováno v:
Phys. Rev. B 97, 174427 (2018)
Magnetic doping with transition metal ions is the most widely used approach to break timereversal symmetry in a topological insulator, a prerequisite for unlocking the TIs exotic potential. Recently, we reported the doping of Bi2Te3 thin films with r
Externí odkaz:
http://arxiv.org/abs/1808.01938
Autor:
Scholz, M. R., Rogalev, V. A., Dudy, L., Reis, F., Adler, F., Aulbach, J., Collins-McIntyre, L. J., Duffy, L. B., Yang, H. F., Chen, Y. L., Hesjedal, T., Liu, Z. K., Hoesch, M., Muff, S., Dil, J. H., Schäfer, J., Claessen, R.
Publikováno v:
Phys. Rev. B 97, 075101 (2018)
We report on the electronic structure of the elemental topological semimetal $\alpha$-Sn on InSb(001). High-resolution angle-resolved photoemission data allow to observe the topological surface state (TSS) that is degenerate with the bulk band struct
Externí odkaz:
http://arxiv.org/abs/1711.10809
Autor:
Wiedemann, B., Chacon, A., Zhang, S. L., Khaydukov, Y., Hesjedal, T., Soltwedel, O., Keller, T., Mühlbauer, S., Adams, T., Halder, M., Pfleiderer, C., Böni, P.
We report grazing incidence small angle neutron scattering (GISANS) and complementary off-specular neutron reflectometry (OSR) of the magnetic order in a single-crystalline epitaxial MnSi film on Si(111) in the thick film limit. Providing a means of
Externí odkaz:
http://arxiv.org/abs/1710.00544
Autor:
Miyata, A., Yang, Z., Surrente, A., Drachenko, O., Maude, D. K., Portugall, O., Duffy, L. B., Hesjedal, T., Plochocka, P., Nicholas, R. J.
Publikováno v:
Phys. Rev. B 96, 121111 (2017)
We have investigated the band structure at the $\Gamma$ point of the three-dimensional (3D) topological insulator Bi$_2$Se$_3$ using magneto-spectroscopy over a wide range of energies ($0.55-2.2$\,eV) and in ultrahigh magnetic fields up to 150\,T. At
Externí odkaz:
http://arxiv.org/abs/1706.00781