Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Hesham Kamel"'
Publikováno v:
International Journal of Electronics and Telecommunications, Vol vol. 68, Iss No 4, Pp 731-739 (2022)
The 2019 Coronavirus (COVID-19) virus has caused damage on people's respiratory systems over the world. Computed Tomography (CT) is a faster complement for RT-PCR during peak virus spread times. Nowadays, Deep Learning (DL) with CT provides more robu
Externí odkaz:
https://doaj.org/article/c895c3eb2496474cb278046d6dfa8174
Publikováno v:
Alexandria Engineering Journal, Vol 61, Iss 12, Pp 9553-9568 (2022)
Internet of Things (IoT) technology drives lifestyle changes in smart city infrastructure due to rapid growth of services and activities that develop well-being. One of the main challenges that resulted from the exponential spread of IoT is the dense
Externí odkaz:
https://doaj.org/article/b6fccdc43b924fa49c1914260fe0ff50
Autor:
Hafez Fouad, Hesham Kamel
Publikováno v:
International Journal of Mathematics and Computers in Simulation. 16:103-114
Telemedicine applications run at very low voltages, necessitating the use of a Great Precision Rectifier with high sensitivity to function at low input voltages. In this study, we used a 65 nm CMOS rectifier to achieve a 0.2V input voltage for Energy
Publikováno v:
International Journal of Circuits, Systems and Signal Processing. 16:1135-1147
Telemedicine applications run at very low input voltages, necessitating the use of Great Precision Rectifier with high sensitivity to function at low input voltages. In this study, we used a 65 nm CMOS rectifier to achieve a 0.2V input voltage for En
Publikováno v:
International Journal of Electrical and Electronics Engineering. 9:19-30
Autor:
Hafez Fouad, Hesham Kamel
Publikováno v:
International Journal of Electronics and Communication Engineering. 9:1-9
Autor:
Hesham Kamel, Mohamed Abouelatta, Yasmin Yahia, Mohamed El-Banna, Ahmed Shaker, Marwa S. Salem
Publikováno v:
Ain Shams Engineering Journal, Vol 13, Iss 1, Pp 101539-(2022)
In this current study, a modified pseudo two-dimensional (2-D) semi-analytical model for double gate tunnel FETs (DG-TFETs) is introduced. The main regions in the DG-TFET structure are the channel and the depletion regions inside the source and the d
Publikováno v:
IET Communications. 14:1275-1284
Internet of things (IoT) is one of the modern technologies, developing existing cellular communication networks to the emerging fifth-generation technology. The traffic modelling of IoT applications is different from the recommended traffic modelling
Publikováno v:
Pramana. 95
The tunnel FET (TFET) is considered a promising candidate which can be used in the design of digital and analog circuits in low-power applications. Due to fabrication tolerances, it is not guaranteed that the gate electrode is perfectly aligned on th
Autor:
Jennifer Thoresen, Crystal D. Cyrus, Hesham Kamel, Paul B. Filson, Larry F. Rhodes, Gerhard A. Meyer, Hugh Burgoon, Jean Rhodes, Liladhar Paudel
Publikováno v:
ACS applied materialsinterfaces. 11(21)
Poly(hydroxystyrene) (PHS) reacts with norbornene in the presence of acid to form a phenoxynorbornane pendent group through the hydroalkoxylation of the norbornene double bond by the phenol -OH group of PHS. Films of PHS, an aqueous base soluble poly