Zobrazeno 1 - 10
of 60
pro vyhledávání: '"Hesameddin Ilatikhameneh"'
Autor:
Tarek A. Ameen, Hesameddin Ilatikhameneh, Archana Tankasala, Yuling Hsueh, James Charles, Jim Fonseca, Michael Povolotskyi, Jun Oh Kim, Sanjay Krishna, Monica S. Allen, Jeffery W. Allen, Rajib Rahman, Gerhard Klimeck
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 1075-1084 (2018)
A detailed theoretical study of the optical absorption in doped self-assembled quantum dots is presented. A rigorous atomistic strain model as well as a sophisticated 20-band tight-binding model are used to ensure accurate prediction of the single pa
Externí odkaz:
https://doaj.org/article/e48fc64446214a85b36b91f6b99e3203
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 3, Pp 124-128 (2016)
A bilayer graphene-based electrostatically doped tunnel field-effect transistor (BED-TFET) is proposed. Unlike graphene nanoribbon TFETs in which the edge states deteriorate the OFF-state performance, BED-TFETs operate based on bandgaps induced by ve
Externí odkaz:
https://doaj.org/article/3c28df07af7d4ff88be76d7b92bfb63b
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 5, Pp 260-265 (2016)
Tunneling field-effect transistors (TFETs) based on 2-D materials are promising steep sub-threshold swing devices due to their tight gate control. There are two major methods to create the tunnel junction in these 2-D TFETs: 1) electrical and 2) chem
Externí odkaz:
https://doaj.org/article/6903fce5f7a14b4caf83d654998fc211
Autor:
Wenjun Li, Saima Sharmin, Hesameddin Ilatikhameneh, Rajib Rahman, Yeqing Lu, Jingshan Wang, Xiaodong Yan, Alan Seabaugh, Gerhard Klimeck, Debdeep Jena, Patrick Fay
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 1, Pp 28-34 (2015)
The concept and simulated device characteristics of tunneling field-effect transistors (TFETs) based on III-nitride heterojunctions are presented for the first time. Through polarization engineering, interband tunneling can become significant in III-
Externí odkaz:
https://doaj.org/article/7057abf74f994e4ea7a7848efe283135
Autor:
Hesameddin Ilatikhameneh, Yaohua Tan, Bozidar Novakovic, Gerhard Klimeck, Rajib Rahman, Joerg Appenzeller
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 1, Pp 12-18 (2015)
In this paper, the performance of tunnel field-effect transistors (TFETs) based on 2-D transition metal dichalcogenide (TMD) materials is investigated by atomistic quantum transport simulations. One of the major challenges of TFETs is their low ON-cu
Externí odkaz:
https://doaj.org/article/08635c1f9a6447358a4f8fd36598fbd2
Publikováno v:
IEEE Transactions on Electron Devices. 67:3478-3485
The triple heterojunction tunnel field-effect transistor (TFET) has been originally proposed to resolve the TFET’s low ON-current challenge. The carrier transport in such devices is complicated due to the presence of quantum wells and strong scatte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::76c4383f8dc919cb3b9eee442923988a
https://doi.org/10.1109/ted.2020.3002220
https://doi.org/10.1109/ted.2020.3002220
Autor:
Hesameddin Ilatikhameneh, Alan Seabaugh, Gerhard Klimeck, Tarek A. Ameen, Patrick Fay, Rajib Rahman
Publikováno v:
IEEE Transactions on Electron Devices. 66:736-742
Being fundamentally limited to a current–voltage steepness of 60mV/dec, MOSFETs struggle to operate below 0.6 V. Further reduction in ${V}_{\text {DD}}$ and, consequently, power consumption can be achieved with novel devices, such as tunneling tran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e43c74241641285729825abd0839a5d
https://doi.org/10.1109/ted.2018.2877753
https://doi.org/10.1109/ted.2018.2877753
Autor:
Tarek A. Ameen, Hsin-Ying Tseng, Mark J. W. Rodwell, Chin-Yi Chen, Michael Povolotskyi, Gerhard Klimeck, Hesameddin Ilatikhameneh
Triple heterojunction (THJ) tunneling field-effect transistors (TFETs) have been proposed to resolve the low ON-current challenge of TFETs. However, the design space for THJ-TFETs is limited by fabrication challenges with respect to device dimensions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ba5610b1c2c6c594f446d2bc36d09427
http://arxiv.org/abs/2010.12964
http://arxiv.org/abs/2010.12964
Publikováno v:
IEEE Transactions on Electron Devices. 65:3065-3068
In this work, vertical tunnel field-effect transistors (v-TFETs) based on vertically stacked heretojunctions from 2D transition metal dichalcogenide (TMD) materials are studied by atomistic quantum transport simulations. The switching mechanism of v-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::968eabfd0a31a4922e331725fdecf9ea
https://doi.org/10.1109/ted.2018.2831688
https://doi.org/10.1109/ted.2018.2831688
Autor:
Hesameddin Ilatikhameneh, Tarek A. Ameen, Fan Chen, Gerhard Klimeck, Harshad Sahasrabudhe, Rajib Rahman
Publikováno v:
IEEE Transactions on Nanotechnology. 17:293-298
Low-dimensional material systems provide a unique set of properties useful for solid-state devices. The building block of these devices is the p-n junction. In this paper, we present a dramatic difference in the electrostatics of p-n junctions in low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c3357c0f518a1939417f7a763da2d1d
https://doi.org/10.1109/tnano.2018.2799960
https://doi.org/10.1109/tnano.2018.2799960