Výsledky vyhledávání - "Herzl Aharoni"

Si light-emitting device in integrated photonic CMOS ICs

Autor: Kaikai Xu, Herzl Aharoni, Lukas W. Snyman

Publikováno v: Optical Materials. 69:274-282

The motivation for integrated Si optoelectronics is the creation of low-cost photonics for mass-market applications. Especially, the growing demand for sensitive biochemical sensors in the environmental control or medicine leads to the development of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1ce794d637234331ce10cbaa406de8c3
https://doi.org/10.1016/j.optmat.2017.03.055

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Stimulation of 700–900 nm wavelength optical emission from Si AMLEDs and coupling into Si3N4 waveguides using a RF silicon integrated circuit process

Autor: Herzl Aharoni, Kaikai Xu, Jinchao Qian, Lukas W. Snyman

Publikováno v: OSA Continuum. 3:798

Stimulation of 700 and 900 nm optical emissions in a two junction monolithically integrated circuit silicon avalanche mode Si light emitting device have been achieved, based on some first iteration modelling and realization of first iteration experim

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e2bb0183246c2f9b02b98aed036c3a92
https://doi.org/10.1364/osac.3.000798

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The Growth of Thin Silicon Oxide and Silicon Nitride Films at Low Temperature (400 $^{\circ}{\hbox{C}}$) and High Growth Rates for Semiconductor Device Fabrication by an Advanced Low Electron Temperature Microwave-Excited High-Density Plasma System

Autor: Masaki Hirayama, Tadahiro Ohmi, Yuji Saito, Herzl Aharoni, Ryu Kaihara, Shigetoshi Sugawa, Katsuyuki Sekine

Publikováno v: IEEE Transactions on Semiconductor Manufacturing. 23:328-339

An advanced approach for the growth of thin and ultra-thin oxide and nitride films at low temperatures (400?C) for the fabrication of future scaled-down semiconductor electron devices is presented. This technique presents an alternative to the existi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a84edbb9a7362fd95f88c3237b6a68cc
https://doi.org/10.1109/tsm.2010.2045582

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Injection-Avalanche-Based n+pn Silicon Complementary Metal–Oxide–Semiconductor Light-Emitting Device (450–750 nm) with 2-Order-of-Magnitude Increase in Light Emission Intensity

Autor: Lukas W. Snyman, Herzl Aharoni, Monuko du Plessis

Publikováno v: Japanese Journal of Applied Physics. 46:2474-2480

In this paper, we report on an increase in emission intensity of up to 10 nW/mm 2 that has been realized with a new novel two junction, diagonal avalanche control, and minority carrier injection silicon complementary metal–oxide–semiconductor (CM

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c9fbae2f505a80164ee979b250dc67c6
https://doi.org/10.1143/jjap.46.2474

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Microcrystalline/Amorphous Thin Si Films Deposition by a Newly Developed Dual Injection System Employing Hydrogen Plasma and Silicon Radicals at Low Temperature (300 °C) Chemical Vapor Deposition Process

Autor: Hirotada Inoue, Masaki Hirayama, Toru Takeda, Toshirou Tsumori, Herzl Aharoni, Kouji Tanaka, Tadahiro Ohmi

Publikováno v: Japanese Journal of Applied Physics. 46:2542-2553

Low temperature (300 °C) deposition of thin microcrystalline/amorphous silicon films by using newly developed single shower, dual injection, microwave excited high density plasma (1011 cm-3) system is described. This is an original setup based on an

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::71ba6721c334ee2c4895b5b957821e5a
https://doi.org/10.1143/jjap.46.2542

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Thin SiON Film Grown at Low Temperature (400$^circhboxC$) by Microwave-Excited High-Density$hboxKr/hboxO_2/hboxN_2$Plasma

Autor: K. Ohtsubo, Tadahiro Ohmi, Yuji Saito, Herzl Aharoni, S. Sugawa, M. Hirayama

Publikováno v: IEEE Transactions on Plasma Science. 34:2443-2449

It is demonstrated that thin oxynitride (SiON) films can be grown on single crystal (100) silicon substrates at a growth temperature of 400 degC, yielding high-quality electrical insulating and reliability properties which are compatible with the IC

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::74e7778c940c8d0296f655eef1de6b1f
https://doi.org/10.1109/tps.2006.883263

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Two- and multi-terminal CMOS/BiCMOS Si LED’s

Autor: Herzl Aharoni, Lukas W. Snyman, Monuko du Plessis

Publikováno v: Optical Materials. 27:1059-1063

Silicon is an indirect bandgap material, but light emission is observed from reverse biased pn junctions. Even though the quantum efficiency is low, it may still be advantageous to use these devices in all-silicon optoelectronic integrated circuits (

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0722fa5a0aa630a3746902fcb9699346
https://doi.org/10.1016/j.optmat.2004.08.063

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Two- and multi-terminal silicon light emitting devices in standard CMOS/BiCMOS IC technology

Autor: Lukas W. Snyman, Herzl Aharoni, Monuko du Plessis

Publikováno v: physica status solidi (a). 201:2225-2233

Although silicon is an indirect bandgap material, light emission from reverse biased pn junctions has been observed. Although the quantum efficiency is low, it will be very advantageous to utilise these devices in all-silicon optoelectronic integrate

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0c91b22cdfa30c38d0a9679ce51be66b
https://doi.org/10.1002/pssa.200404846

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