Zobrazeno 1 - 10
of 58
pro vyhledávání: '"Herziger, Felix"'
Autor:
Herziger, Felix, Tyborski, Christoph, Ochedowski, Oliver, Schleberger, Marika, Maultzsch, Janina
The line shape of the double-resonant $2D$ Raman mode in bilayer graphene is often considered to be characteristic for a certain laser excitation energy. Here, in a joint experimental and theoretical study, we analyze the dependence of the double-res
Externí odkaz:
http://arxiv.org/abs/1812.07305
Autor:
Dubey, Sudipta, Lisi, Simone, Nayak, Goutham, Herziger, Felix, Nguyen, Van-Dung, Quang, Toai Le, Cherkez, Vladimir, González, César, Dappe, Yannick J., Watanabe, Kenji, Taniguchi, Takashi, Magaud, Laurence, Mallet, Pierre, Veuillen, Jean-Yves, Arenal, Raul, Marty, Laëtitia, Renard, Julien, Bendiab, Nedjma, Coraux, Johann, Bouchiat, Vincent
Publikováno v:
ACS Nano 11, pp. 11206-11216 (2017)
Few- and single-layer MoS2 host substantial densities of defects. They are thought to influence the doping level, the crystal structure, and the binding of electron-hole pairs. We disentangle the concomitant spectroscopic expression of all three effe
Externí odkaz:
http://arxiv.org/abs/1805.02374
We present in-situ Raman measurements of laser-induced oxidation in exfoliated single-layer graphene. By using high-power laser irradiation, we can selectively and in a controlled way initiate the oxidation process and investigate its evolution over
Externí odkaz:
http://arxiv.org/abs/1508.03457
We present a theoretical model to describe the double-resonant scattering process in arbitrary carbon nanotubes. We use this approach to investigate the defect-induced $D$ mode in CNTs and unravel the dependence of the $D$-mode frequency on the CNT d
Externí odkaz:
http://arxiv.org/abs/1508.03456
Publikováno v:
Phys. Rev. B 92, 041401(R) (2015)
We present an analysis of deep-UV Raman measurements of graphite, graphene and carbon nanotubes. For excitation energies above the strong optical absorption peak at the $M$ point in the Brillouin zone ($\approx 4.7\,\text{eV}$), we partially suppress
Externí odkaz:
http://arxiv.org/abs/1503.08031
Autor:
Herziger, Felix, Tyborski, Christoph, Ochedowski, Oliver, Schleberger, Marika, Maultzsch, Janina
Publikováno v:
Phys. Rev. B 90, 245431 (2014)
We present measurements of the $D''$ Raman mode in graphene and carbon nanotubes at different laser excitation energies. The Raman mode around 1050 - 1150\,cm$^{-1}$ originates from a double-resonant scattering process of longitudinal acoustic (LA) p
Externí odkaz:
http://arxiv.org/abs/1412.4501
Autor:
Herziger, Felix, Calandra, Matteo, Gava, Paola, May, Patrick, Lazzeri, Michele, Mauri, Francesco, Maultzsch, Janina
Publikováno v:
Phys. Rev. Lett. 113, 187401 (2014)
By computing the double-resonant Raman scattering cross-section completely from first principles and including electron-electron interaction at the $GW$ level, we unravel the dominant contributions for the double-resonant 2D-mode in bilayer graphene.
Externí odkaz:
http://arxiv.org/abs/1410.1316
Autor:
Lippert, Gunther, Dabrowski, Jarek, Schroeder, Thomas, Yamamoto, Yuji, Herziger, Felix, Maultzsch, Janina, Baringhaus, Jens, Tegenkamp, Christoph, Asensio, Maria Carmen, Avila, Jose, Lupina, Grzegorz
Publikováno v:
Carbon 75 (2014) 104-112
Among the many anticipated applications of graphene, some - such as transistors for Si microelectronics - would greatly benefit from the possibility to deposit graphene directly on a semiconductor grown on a Si wafer. We report that Ge(001) layers on
Externí odkaz:
http://arxiv.org/abs/1312.5425
Autor:
Lippert, Gunther, Dabrowski, Jarek, Yamamoto, Yuji, Herziger, Felix, Maultzsch, Janina, Lemme, Max C., Mehr, Wolfgang, Lupina, Grzegorz
Publikováno v:
Carbon, 52 (2013) 40-48
We demonstrate molecular beam growth of graphene on biotite mica substrates at temperatures below 1000{\deg}C. As indicated by optical and atomic force microscopy, evaporation of carbon from a high purity solid-state source onto biotite surface resul
Externí odkaz:
http://arxiv.org/abs/1205.6591
Publikováno v:
Phys. Rev. B 85, 235447 (2012)
We present a double-resonant Raman mode in few-layer graphene, which is able to probe the number of graphene layers reliably. This so-called N mode on the low-frequency side of the G mode results from a double-resonant Stokes/anti-Stokes process comb
Externí odkaz:
http://arxiv.org/abs/1203.6043