Zobrazeno 1 - 10
of 67
pro vyhledávání: '"Hery S. Djie"'
Autor:
Luke F. Lester, Y. Wang, C. Chen, James C. M. Hwang, Thomas L. Koch, Hery S. Djie, Boon S. Ooi
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 17:1167-1174
Temperature-dependent intrinsic modulation response of InAs/InAlGaAs quantum-dash lasers was investigated by using pulse optical injection modulation to minimize the effects of parasitics and self-heating. Compared to typical quantum-well lasers, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1bc3a00c9bd105fb33fff9302ff2392
https://doi.org/10.1109/jstqe.2010.2103373
https://doi.org/10.1109/jstqe.2010.2103373
Publikováno v:
IEEE Journal of Quantum Electronics. 46:1368-1374
The fundamental and dynamic properties of InGaAs-InGaAsP lasers, where emission wavelengths were blue-shifted by quantum-well intermixing through ion implantation and annealing, were investigated to assess possible degradation by intermixing. It was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abde45c8d37c7996bf74db961c14ed02
https://doi.org/10.1109/jqe.2010.2047939
https://doi.org/10.1109/jqe.2010.2047939
Publikováno v:
IEEE Journal of Quantum Electronics. 45:1177-1182
The theoretical analysis of optical gain and chirp characteristics of a semiconductor quantum dot (Qdot) broadband laser is presented. The model based on population rate equations, has been developed to investigate the multiple states lasing or quasi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72fde5ae06a38610dbbe7e5bcd01cee9
https://doi.org/10.1109/jqe.2009.2020813
https://doi.org/10.1109/jqe.2009.2020813
Publikováno v:
IEEE Journal of Quantum Electronics. 45:1168-1176
This paper presents a theoretical model to explain the quasi-supercontinuum interband emission from InGaAs/GaAs self-assembled semiconductor quantum dot lasers by accounting for both inhomogeneous and homogeneous optical gain broadening. The experime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91aec69f7ade76c055a295256da00bb4
https://doi.org/10.1109/jqe.2009.2020055
https://doi.org/10.1109/jqe.2009.2020055
Publikováno v:
Computational Materials Science. 44:167-173
The details of dynamic phenomena of broadband lasing in quantum-dot lasers in association with the role of both inhomogeneous and homogeneous optical gain broadening is theoretically investigated. The theoretical results of room temperature broadband
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4944235099f20f15e9793cb40ce3118c
https://doi.org/10.1016/j.commatsci.2008.01.049
https://doi.org/10.1016/j.commatsci.2008.01.049
Autor:
Hery S. Djie, James C. M. Hwang, Joel M. Fastenau, Dong-Ning Wang, Y. Wu, X.-M. Fang, Boon S. Ooi, W. K. Liu
Publikováno v:
Thin Solid Films. 515:4344-4347
The effects of rapid thermal annealing on InGaAs quantum dots grown by atomic layer molecular beam epitaxy to the structural transformation and optical properties are investigated. No misfit dislocation was observed from either the as-grown or anneal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4847f31c54b51ea9212a36c8e545b213
https://doi.org/10.1016/j.tsf.2006.07.097
https://doi.org/10.1016/j.tsf.2006.07.097
Autor:
Dong-Ning Wang, Hery S. Djie, C.E. Dimas, Gerard Dang, James C. M. Hwang, Boon-Siew Ooi, W. Chang
Publikováno v:
IEEE Sensors Journal. 7:251-257
We report on the design and fabrication of a novel wideband superluminescent diode (SLD) based on InGaAs/GaAs quantum-dot structure. In this device, we monolithically integrate a photon absorber section to suppress lasing action and optical feedback
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcc8e80c9412f8598673a858db2448c9
https://doi.org/10.1109/jsen.2006.886884
https://doi.org/10.1109/jsen.2006.886884
Publikováno v:
Journal of Crystal Growth. 288:40-43
The intermixing of InGaAs/GaAs quantum dot using isoelectric ion implantation followed by rapid thermal annealing is presented. The implantation was carried out at 200 °C with arsenic (As+) and phosphorus (P+) ions, at various doses, where the ions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebd9f1b700096158cad932b753ab3418
https://doi.org/10.1016/j.jcrysgro.2005.12.060
https://doi.org/10.1016/j.jcrysgro.2005.12.060
Publikováno v:
Journal of Crystal Growth. 288:153-156
We report a broadband superluminescence diode using InGaAs/GaAs self-assembled quantum dots structure grown by atomic layer molecular beam epitaxy. This two-section SLD consists of weakly guided-rib-waveguide gain section (4 μm wide) butt-connected
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebd4112cda2cba1e01dba4965eb13e19
https://doi.org/10.1016/j.jcrysgro.2005.12.043
https://doi.org/10.1016/j.jcrysgro.2005.12.043
Publikováno v:
International Journal of Nanoscience. :683-688
We report the study of the interdiffusion effect of quantum-dot (QD) heterostructures, focusing on the theoretical calculation of the electronic structure of interdiffused QDs. A computational model has been developed for QD superlattice system using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b819c930189dbc06874813277d0e1f9
https://doi.org/10.1142/s0219581x05003693
https://doi.org/10.1142/s0219581x05003693