Zobrazeno 1 - 10
of 36 132
pro vyhledávání: '"Herwig, A."'
Autor:
Roman, Marta, Di Cataldo, Simone, Stöger, Berthold, Reisinger, Lisa, Morineau, Emilie, Kolincio, Kamil K., Michor, Herwig
Charge density wave (CDW) orders in YNiC2 are studied by means of combined experimental and computational techniques. On the experimental side, single crystals grown by the floating-zone method were examined by means of X-ray diffraction, as well as
Externí odkaz:
http://arxiv.org/abs/2411.02154
Cooling ages of white dwarfs are routinely determined by mapping effective temperatures and masses to ages using evolutionary models. Typically, the reported uncertainties on cooling ages only consider the error propagation of the uncertainties on th
Externí odkaz:
http://arxiv.org/abs/2410.14014
Multiple galaxies hosting active galactic nuclei (AGNs) at kpc separation from each other are exceedingly rare, and in fact, only one quadruple AGN is known so far. These extreme density peaks are expected to pinpoint protocluster environments and th
Externí odkaz:
http://arxiv.org/abs/2410.00974
The problem of approximate joint diagonalization of a collection of matrices arises in a number of diverse engineering and signal processing problems. This problem is usually cast as an optimization problem, and it is the main goal of this publicatio
Externí odkaz:
http://arxiv.org/abs/2409.10292
The current-voltage characteristic of a driven superconducting Josephson junction displays discrete steps. This phenomenon, discovered by Sydney Shapiro, forms today's voltage standard. Here, we report the observation of Shapiro steps in a driven Jos
Externí odkaz:
http://arxiv.org/abs/2409.03340
Autor:
Herwig, Eileen, Battaia, Fabrizio Arrigoni, Lobos, Jay González, Farina, Emanuele P., Man, Allison W. S., Bañados, Eduardo, Kauffmann, Guinevere, Cai, Zheng, Obreja, Aura, Prochaska, J. Xavier
Publikováno v:
A&A 691, A210 (2024)
Extended Ly$\alpha$ emission is routinely found around single quasars (QSO) across cosmic time. However, few studies have investigated how such emission changes in fields with physically associated QSO pairs, which should reside in dense environments
Externí odkaz:
http://arxiv.org/abs/2408.16826
Autor:
Krupp, Lars, Bley, Jonas, Gobbi, Isacco, Geng, Alexander, Müller, Sabine, Suh, Sungho, Moghiseh, Ali, Medina, Arcesio Castaneda, Bartsch, Valeria, Widera, Artur, Ott, Herwig, Lukowicz, Paul, Karolus, Jakob, Kiefer-Emmanouilidis, Maximilian
Individual teaching is among the most successful ways to impart knowledge. Yet, this method is not always feasible due to large numbers of students per educator. Quantum computing serves as a prime example facing this issue, due to the hype surroundi
Externí odkaz:
http://arxiv.org/abs/2407.17024
Autor:
Parzer, Michael, Garmroudi, Fabian, Michor, Herwig, Yan, Xinlin, Bauer, Ernst, Rogl, Gerda, Bursik, Jiri, Cottrell, Stephen, Podloucky, Raimund, Rogl, Peter
Publikováno v:
Phys. Rev. B 110, 195124 (2024)
Structural defects are important for both solid-state chemistry and physics, as they can have a significant impact on chemical stability and physical properties. Here, we identify a vacancyinduced pseudo-gap formation in antiferromagnetic Cr$_{0.86}$
Externí odkaz:
http://arxiv.org/abs/2406.08021
Autor:
Haouari, Jihanne El, Gaucel, Jean-Michel, Pittet, Christelle, Tourneret, Jean-Yves, Wendt, Herwig
Accurate estimates of Instrument Spectral Response Functions (ISRFs) are crucial in order to have a good characterization of high resolution spectrometers. Spectrometers are composed of different optical elements that can induce errors in the measure
Externí odkaz:
http://arxiv.org/abs/2404.05298
Autor:
Cardinael, Pieter, Yadav, Sachin, Hahn, Herwig, Zhao, Ming, Banerjee, Sourish, Esfeh, Babak Kazemi, Mauder, Christof, Sullivan, Barry O, Peralagu, Uthayasankaran, Vohra, Anurag, Langer, Robert, Collaert, Nadine, Parvais, Bertrand, Raskin, Jean-Pierre
Fabrication of low-RF loss GaN-on-Si HEMT stacks is critical to enable competitive front-end-modules for 5G and 6G applications. The main contribution to RF losses is the interface between the III-N layer and the HR Si wafer, more specifically the Al
Externí odkaz:
http://arxiv.org/abs/2404.02707