Strain engineering for bumping over IPs: Numerical investigations of thermo-mechanical stress induced mobility variations for CMOS 32nm and beyond

Autor: Herve Jaouen, Sebastien Gallois-Garreignot, Vincent Fiori, Clement Tavernier

Publikováno v: Microelectronics Reliability. 53:229-235

In this paper, numerical investigations of the mechanical effect of the bumping process on the electrical performances of transistors are performed. This aims to forecast mobility changes and to provide guidelines on the design rules for MOSFET place

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::aed14371ecf9b3e650b70970f4b0f9eb
https://doi.org/10.1016/j.microrel.2012.08.015

Narrow-Width Effects on a Body-Tied Partially Depleted SOI MOSFET

Autor: S. Puget, Patrick Scheer, R. Valentin, G. Bertrand, Andre Juge, Herve Jaouen, C. Raynaud

Publikováno v: IEEE Transactions on Electron Devices. 58:3793-3800

In this paper, we present the investigation of narrow-width effects (NWEs) on partially depleted (PD) silicon-on-insulator (SOI) with different gate shape topologies. Based on dc/ac measurements and TCAD simulations, it shows detailed clarifications

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e6ba12caca8ea0c4653cfce21137f734
https://doi.org/10.1109/ted.2011.2165283

On the validity of the effective mass approximation and the Luttinger k.p model in fully depleted SOI MOSFETs

Autor: Clement Tavernier, M. Michaillat, Herve Jaouen, Yann-Michel Niquet, M. Feraille, Denis Rideau

Publikováno v: Solid-State Electronics. 53:452-461

The confined states in strained silicon fully depleted silicon-on-insulator MOSFETs are investigated using full-band k.p method within the envelope-function approximation. Full-band calculations of important transport parameters – energy band shift

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fa2b099b995267007db64babbebd3184
https://doi.org/10.1016/j.sse.2008.08.006

Effect of voids-controlled vacancy supersaturations on B diffusion

Autor: Leonard M. Rubin, O. Marcelot, Filadelfo Cristiano, Silke Paul, C. Armand, Frédéric Cayrel, Alain Claverie, Daniel Alquier, Herve Jaouen, Wilfried Lerch

Publikováno v: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 257:249-252

We present here preliminary results on boron diffusion in presence of pre-formed voids of different characteristics. The voids were fabricated by helium implantation followed by annealing allowing the desorption of He prior to boron implantation. We

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::03dedf1fed08ba20021649187cc388a0
https://doi.org/10.1016/j.nimb.2007.01.236

Investigations of Thermomechanical Stress Induced by TSV-Middle (Through-Silicon via) in 3-D ICs by Means of CMOS Sensors and Finite-Element Method

Autor: Komi Atchou Ewuame, Clement Tavernier, Vincent Fiori, Sylvain Lionti, Pierre-Olivier Bouchard, Herve Jaouen, Karim Inal, Sebastien Gallois-Garreignot

Publikováno v: IEEE Transactions on Components, Packaging and Manufacturing Technology. Part A, Manufacturing Technology
IEEE Transactions on Components, Packaging and Manufacturing Technology. Part A, Manufacturing Technology, Institute of Electrical and Electronics Engineers (IEEE), 2015, 5 (8), pp.1085-1092-Article number 7164297. ⟨10.1109/TCPMT.2015.2445099⟩

International audience; This paper aims at determining thermomechanical stress variations induced by annealed copper filled through-silicon via (TSV) in single crystalline silicon using metal-oxide-semiconductor (MOS) rosette sensors. These eight bra

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2417395c7b411f47a9d2eb1531e89ed9
https://hal-mines-paristech.archives-ouvertes.fr/hal-01221158