Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Herve A. Besaucele"'
Autor:
Nigel R. Farrar, Kevin M. O'brien, Daniel J. Riggs, Aravind Ratnam, Kevin Zhang, Herve A. Besaucele, Daniel J. W. Brown, Robert N. Jacques, Wayne J. Dunstan
Publikováno v:
Optical Microlithography XXI.
Increasing productivity demands on leading-edge scanners require greatly improved light source availability. This translates directly to minimizing downtime and maximizing productive time, as defined in the SEMI E10 standard. Focused efforts to achie
Autor:
Mary Haviland, Robert Poole, Bryan G Moosman, Patrick O'Keeffe, Cynthia A. Maley, Timothy S. Dyer, Toshihiko Ishihara, Richard G. Morton, Herve A. Besaucele, Vladimir B. Fleurov, Walter D. Gillespie
Publikováno v:
SPIE Proceedings.
Since the introduction of the XLA-100 in January 2003, we have built, tested, and shipped a large number of XLA-100 MOPA lasers to microlithography scanner manufacturers. Some systems have already been installed at chip fabrication lines. To ensure p
Autor:
Herve A. Besaucele, Robert J. Rafac, Vladimir B. Fleurov, Toshihiko Ishihara, Alexei Lukashev, Daniel J. W. Brown, Paolo Zambon, Daniel J. Colon, Patrick O'Keeffe, Alexander I. Ershov, Fedor B. Trintchouk
Publikováno v:
SPIE Proceedings.
Since the announcement in March 2002 of plans to develop an advanced light source to meet the future spectral power and cost requirements of photolithography, we have made significant progress in the development and productization of the core technol
Autor:
Dmitri V. Gaidarenko, Thomas Hofmann, Scot T. Smith, Kyle R. Webb, Herve A. Besaucele, William N. Partlo, Rick Eis, Paul C. Melcher, Vladimir B. Fleurov, Alexander I. Ershov, Bernard K. Nikolaus, Palash P. Das, Jean-Marc Hueber
Publikováno v:
SPIE Proceedings.
We report the performance of a very high repetition rate ArF laser optimized for next generation, high NA, high throughput scanner. The laser's repetition rate exceeds 4kHz, at 5mJ, and at bandwidths of less than 1.2 pm. We discuss the complexity of
Autor:
Paul C. Melcher, Alexander I. Ershov, Todd J. Embree, Palash P. Das, Herve A. Besaucele, Steven L. Grove, Vladimir B. Fleurov, Richard M. Ness, Thomas P. Duffey, Gunasiri G. Padmabandu
Publikováno v:
SPIE Proceedings.
Exposure tools for 193nm lithography are expected to use Argon-Fluoride lasers at repetition rates of at least 2kHz. We are showing that, by revisiting several key technologies, the performance and reliability of ArF lasers at 2 kHz are trending towa
Publikováno v:
SPIE Proceedings.
Today, commercial line-narrowed ArF lasers for Deep-UV lithography are typically producing spectral bandwidth of 0.6 pm FWHM. This value forces the stepper/scanner manufacturers to use large amount of CaF 2 in the lens design as well as fused silica