Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Hervé Boutry"'
Autor:
Rami Khazaka, Y. Bogumilowicz, Bernard Previtali, Sylvain David, Denis Rouchon, Nicolas Chevalier, Sylvain Maitrejean, Zdenek Chalupa, Hervé Boutry, Anne Marie Papon, V. Lapras
Publikováno v:
Applied Surface Science
Applied Surface Science, Elsevier, 2018, 445, pp.77-80. ⟨10.1016/j.apsusc.2018.03.104⟩
Applied Surface Science, 2018, 445, pp.77-80. ⟨10.1016/j.apsusc.2018.03.104⟩
Applied Surface Science, Elsevier, 2018, 445, pp.77-80. ⟨10.1016/j.apsusc.2018.03.104⟩
Applied Surface Science, 2018, 445, pp.77-80. ⟨10.1016/j.apsusc.2018.03.104⟩
In this contribution, we report on the growth of Ge inside extremely thin 16-nm thick cavities through selective lateral growth of Ge on 300 mm silicon-on-insulator (0 0 1) substrates. We showed that the density of defects depends on the cavity shape
Autor:
J. Moeyaert, P. Bezard, Mickael Martin, Sylvain David, P. Hauchecorne, Georges Beainy, R. Alcotte, E. Eustache, Bassem Salem, M. Bawedin, T. Cerba, Thierry Baron, Gilles Patriarche, Eric Tournié, Franck Bassani, Hervé Boutry, Xavier Chevalier, G. Lombard
Publikováno v:
Journal of Crystal Growth
Journal of Crystal Growth, Elsevier, 2019, 510, pp.18-22. ⟨10.1016/j.jcrysgro.2018.12.014⟩
Journal of Crystal Growth, 2019, 510, pp.18-22. ⟨10.1016/j.jcrysgro.2018.12.014⟩
Journal of Crystal Growth, Elsevier, 2019, 510, pp.18-22. ⟨10.1016/j.jcrysgro.2018.12.014⟩
Journal of Crystal Growth, 2019, 510, pp.18-22. ⟨10.1016/j.jcrysgro.2018.12.014⟩
International audience; We demonstrated the fabrication of a densely packed InAs fins network for nanoelectronic applications. High crystalline quality GaSb/InAs layers have been grown directly on 300 mm nominal (0 0 1)-Si substrate. The InAs was the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::438f44f5cb94d255ea8a35c706f65a2e
https://hal.archives-ouvertes.fr/hal-02055424
https://hal.archives-ouvertes.fr/hal-02055424
Autor:
Hervé Boutry, A.M. Papon, H. Dansas, Zdenek Chalupa, V. Lapras, Bernard Previtali, Sylvain Maitrejean, Y. Bogumilowicz, Rami Khazaka
Publikováno v:
Applied Physics Letters
Applied Physics Letters, 2018, 112 (24), pp.241602. ⟨10.1063/1.5034205⟩
Applied Physics Letters, American Institute of Physics, 2018, 112 (24), pp.241602. ⟨10.1063/1.5034205⟩
Applied Physics Letters, 2018, 112 (24), pp.241602. ⟨10.1063/1.5034205⟩
Applied Physics Letters, American Institute of Physics, 2018, 112 (24), pp.241602. ⟨10.1063/1.5034205⟩
In this contribution, we report on the growth of horizontal Ge nanowires inside extremely thin tunnels surrounded by oxide. This is achieved through selective lateral growth of Ge on silicon-on-insulator (001) substrates. The 16 nm high tunnels are f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::985451bb6dfb3d1937b66c2574336ac8
https://cea.hal.science/cea-02185226
https://cea.hal.science/cea-02185226
Autor:
Tiphaine Cerba, Mickaël Martin, Jeremy Moeyaert, Reynald Alcotte, Bassem Salem, Etienne Eustache, Philippe Bézard, Xavier Chevalier, Geoffrey Lombard, Franck Bassani, Sylvain David, Jean-Luc Rouvière, George Beainy, Laurent Cerutti, Jean-Baptiste Rodriguez, Eric Tournié, Hervé Boutry, Maryline Bawedin, Thierry Baron
Publikováno v:
19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE 2018)
19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE 2018), Jun 2018, Nara, Japan
HAL
19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE 2018), Jun 2018, Nara, Japan
HAL
session III-V Devices on Group IV Substrates (6A-2.2); International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::5a4eee8caf07a529f2306c0a8e29d5d4
https://hal.univ-grenoble-alpes.fr/hal-01954906
https://hal.univ-grenoble-alpes.fr/hal-01954906
Autor:
Y. Bogumilowicz, T. Cerba, Hervé Boutry, Eric Tournié, Thierry Baron, Patrice Gergaud, Jean-Luc Rouvière, R. Alcotte, M. Bawedin, Franck Bassani, Laurent Cerutti, Mickael Martin, J. Moeyaert, Jean-Baptiste Rodriguez, Sylvain David
Publikováno v:
Thin Solid Films
Thin Solid Films, 2018, 645, pp.5-9. ⟨10.1016/j.tsf.2017.10.024⟩
Thin Solid Films, Elsevier, 2018, 645, pp.5-9. ⟨10.1016/j.tsf.2017.10.024⟩
Thin Solid Films, 2018, 645, pp.5-9. ⟨10.1016/j.tsf.2017.10.024⟩
Thin Solid Films, Elsevier, 2018, 645, pp.5-9. ⟨10.1016/j.tsf.2017.10.024⟩
International audience; Antiphase boundaries free GaSb epitaxial layers with low surface roughness (< 0.5 nm) have been synthesized on standard microelectronic 300 mm nominal (001)-Si substrates by metal organic chemical vapor deposition using a two-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::16b4f094c00894a076818a2896929b6c
https://hal.univ-grenoble-alpes.fr/hal-01954336
https://hal.univ-grenoble-alpes.fr/hal-01954336
Autor:
Alexandre Arnoult, H. Grampeix, Maud Vinet, Mickael Martin, Mathilde Billaud, Philippe Ferrandis, Julien Duvernay, Thierry Baron, Mikael Casse, Gilles Reimbold, Hervé Boutry
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2018, 123 (16), pp.161534. ⟨10.1063/1.5007920⟩
Journal of Applied Physics, 2018, 123 (16), pp.161534. ⟨10.1063/1.5007920⟩
Journal of Applied Physics, American Institute of Physics, 2018, 123 (16), pp.161534
Journal of Applied Physics, American Institute of Physics, 2018, 123 (16), pp.161534. 〈10.1063/1.5007920〉
Journal of Applied Physics, American Institute of Physics, 2018, 123 (16), pp.161534. ⟨10.1063/1.5007920⟩
Journal of Applied Physics, 2018, 123 (16), pp.161534. ⟨10.1063/1.5007920⟩
Journal of Applied Physics, American Institute of Physics, 2018, 123 (16), pp.161534
Journal of Applied Physics, American Institute of Physics, 2018, 123 (16), pp.161534. 〈10.1063/1.5007920〉
International audience; To overcome the Fermi-level pinning in III-V metal-oxide-semiconductor capacitors, attention is usually focused on the choice of dielectric and surface chemical treatments prior to oxide deposi-tion. In this work, we examined
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8c76468ce6d4c6db61c2ac7b744fe05e
https://hal.archives-ouvertes.fr/hal-01987681/document
https://hal.archives-ouvertes.fr/hal-01987681/document
Autor:
Hervé Boutry, Thierry Baron, Oliver Faynot, Thomas Ernst, Christophe Vallée, Mathilde Billaud, Gilles Reimbold, Julien Duvernay, Bernard Pelissier, Mickaël Cassé, Mickael Martin, Zdenek Chalupa, Maud Vinet, Helen Grampeix, Sylvain David
Publikováno v:
ECS Transactions
ECS Transactions, 2015, 69 (5), pp.9-13. ⟨10.1149/06905.0009ecst⟩
ECS Transactions, Electrochemical Society, Inc., 2015, 69 (5), pp.9-13. ⟨10.1149/06905.0009ecst⟩
ECS Transactions, 2015, 69 (5), pp.9-13. ⟨10.1149/06905.0009ecst⟩
ECS Transactions, Electrochemical Society, Inc., 2015, 69 (5), pp.9-13. ⟨10.1149/06905.0009ecst⟩
The achievement of a good high-k oxide/InGaAs interface quality is a key challenge to obtain high performance MOSFET. Associating Al2O3 and HfO2 in a bilayer oxide is interesting to benefit from the good interface quality obtained with Al2O3 and the
Autor:
Tiphaine Cerba, Mickaël Martin, Jeremy Moeyaert, Sylvain David, Jean-Luc Rouvière, Laurent Cerutti, Reynald Alcotte, Jean-Baptiste Rodriguez, Hervé Boutry, Franck Bassani, Yann Bogumilowicz, Eric Tournié, Thierry Baron
Publikováno v:
HAL
E-MRS Fall meeting, Symposium M
E-MRS Fall meeting, Symposium M, 2017, Warsaw, Poland
2017 EMRS Fall Meeting
2017 EMRS Fall Meeting, 2017, Warsaw, Poland
E-MRS Fall meeting, Symposium M
E-MRS Fall meeting, Symposium M, 2017, Warsaw, Poland
2017 EMRS Fall Meeting
2017 EMRS Fall Meeting, 2017, Warsaw, Poland
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::1bf6be53efe5df00a9230a2d1eeda8a2
https://hal.univ-grenoble-alpes.fr/hal-01891383
https://hal.univ-grenoble-alpes.fr/hal-01891383
Autor:
J. Duvernay, Mikael Casse, Thomas Ernst, Helen Grampeix, Maud Vinet, Bernard Pelissier, Mickael Martin, Hervé Boutry, M. Billaud, Zdenek Chalupa, Thierry Baron
Publikováno v:
EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon.
Al 2 O 3 /InGaAs interface has been studied and optimized for a 300mm compatible process. XPS analysis and electrical measurements of MOS capacitors revealed that a NH4OH treatment associated with TMA precursor pulse before the ALD deposition is effi
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, 2002, 92 (9), pp.5286-5295. ⟨10.1063/1.1511820⟩
Journal of Applied Physics, 2002, 92 (9), pp.5286-5295. ⟨10.1063/1.1511820⟩
International audience; A Monte Carlo method is proposed for the study of in-plane electron transport in narrow gap heterostructures. Special attention is paid to the consequences of the strong nonparabolicity of the conduction band. The electron sta