Zobrazeno 1 - 10
of 179
pro vyhledávání: '"Hervé, Morel"'
Autor:
Joao Oliveira, Jean-Michel Reynes, Hervé Morel, Pascal Frey, Olivier Perrotin, Laurence Allirand, Stéphane Azzopardi, Michel Piton, Fabio Coccetti
Publikováno v:
Energies, Vol 17, Iss 21, p 5476 (2024)
The short-circuit (SC) immunity of power silicon carbide (SiC) MOSFETs is critical for high-reliability applications, where robust monitoring and protection strategies are essential to ensure system safety. Despite their superior voltage blocking cap
Externí odkaz:
https://doaj.org/article/2147a465af7b4cda8d50b1cec018d707
Autor:
Florian Rigaud-Minet, Christophe Raynaud, Julien Buckley, Matthew Charles, Patricia Pimenta-Barros, Romain Gwoziecki, Charlotte Gillot, Véronique Sousa, Hervé Morel, Dominique Planson
Publikováno v:
Energies, Vol 16, Iss 2, p 599 (2023)
Many kinds of defects are present in AlGaN/GaN-on-Si based power electronics devices. Their identification is the first step to understand and improve device performance. Electron traps are investigated in AlGaN/GaN-on-Si power diodes using deep leve
Externí odkaz:
https://doaj.org/article/ab8b91208a9f4961804050c127c94416
Autor:
Florian Rigaud-Minet, Julien Buckley, William Vandendaele, Matthew Charles, Marie-Anne Jaud, Elise Rémont, Hervé Morel, Dominique Planson, Romain Gwoziecki, Charlotte Gillot, Véronique Sousa
Publikováno v:
Energies, Vol 15, Iss 19, p 7062 (2022)
Many kinds of defects are present in the different layers of GaN-on-Si epitaxy. Their study is very important, especially because they play a significant role on the device characteristics. This paper investigates the cause of the temperature depende
Externí odkaz:
https://doaj.org/article/7c7b27fb43544754a03e4889af2ed11a
Publikováno v:
Electronics; Volume 12; Issue 11; Pages: 2529
The threshold voltage instability in p-GaN gate high electron mobility transistors (HEMTs) has been brought into evidence in recent years. It can lead to reliability issues in switching applications, and it can be followed by other degradation mechan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=multidiscipl::e4c8a1517631de9c3d4e8a8d19561f94
Publikováno v:
Materials Science Forum. 1062:613-618
An optimized termination extension tutorial is reported for a small area (≈ 1mm2 ) 4H-SiC NPN BJT. The extension system is based on a parametric JTE with isolation rings. Additional aspects such as (1) MESA angle, (2) relieving electric field on th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8175f74ef2892a43dcf49041eb11b092
https://doi.org/10.4028/p-vms03o
https://doi.org/10.4028/p-vms03o
Autor:
P. Vigneshwara Raja, Christophe Raynaud, Camille Sonneville, Atse Julien Eric N'Dohi, Hervé Morel, Luong Viet Phung, Thi Huong Ngo, Philippe De Mierry, Eric Frayssinet, Hassan Maher, Josiane Tasselli, Karine Isoird, Frédéric Morancho, Yvon Cordier, Dominique Planson
Publikováno v:
Microelectronics Journal
Microelectronics Journal, 2022, 128, pp.105575. ⟨10.1016/j.mejo.2022.105575⟩
Microelectronics Journal, 2022, 128, pp.105575. ⟨10.1016/j.mejo.2022.105575⟩
International audience; This paper reports comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes (SBDs) fabricated on free-standing GaN substrates. The GaN active layer properties are evaluated by atomic force microscopy (AFM)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e5b1096780a672ef94e9ef4adf2c4724
https://hal.science/hal-03826217/document
https://hal.science/hal-03826217/document
Autor:
Luong Viet Phung, Michel Mermet-Guyennet, Hervé Morel, Pascal Bevilacqua, Besar Asllani, Dominique Planson, Thomas Lagier, Beverley Choucoutou
Publikováno v:
Materials Science Forum. 1004:923-932
This paper reports the device design, fabrication and characterisation of 10 kV-class Bipolar Junction Transistor (BJT). Manufactured devices have been packaged in single BJT, two paralleled BJTs and Darlington configurations. The static and switchin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8dafdd84b724977464172aea74f9c8d0
https://doi.org/10.4028/www.scientific.net/msf.1004.923
https://doi.org/10.4028/www.scientific.net/msf.1004.923
Publikováno v:
Control Engineering Practice. 131:105389
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::323453353a46aa7ffdc5c744b89d3c74
https://doi.org/10.1016/j.conengprac.2022.105389
https://doi.org/10.1016/j.conengprac.2022.105389
Publikováno v:
Sensors, Vol 10, Iss 1, Pp 388-399 (2010)
Sensor technology is moving towards wide-band-gap semiconductors providing high temperature capable devices. Indeed, the higher thermal conductivity of silicon carbide, (three times more than silicon), permits better heat dissipation and allows bette
Externí odkaz:
https://doaj.org/article/12b6a27ed8184fc08e1533c3194d9021
Autor:
Tanguy Simon, Mattia Giaccagli, Jean-François Trégouët, Daniele Astolfi, Vincent Andrieu, Xuefang Lin-Shi, Hervé Morel
Publikováno v:
2021 60th IEEE Conference on Decision and Control (CDC)
2021 60th IEEE Conference on Decision and Control (CDC), Dec 2021, Austin, United States
HAL
2021 60th IEEE Conference on Decision and Control (CDC), Dec 2021, Austin, United States
HAL
International audience; This paper tackles the problem of robust output set-point tracking for a power flow controller (PFC) for meshed DC micro-grids. The PFC is a power electronics device used to control the power (or current) flow in the lines of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0ca04a9e43dac674c1818d5d792ac095
https://hal.archives-ouvertes.fr/hal-03375498/document
https://hal.archives-ouvertes.fr/hal-03375498/document