Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Hervé, Blanck"'
Autor:
Gao Zhan, Fabiana Rampazzo, Carlo De Santi, Mirko Fornasier, Gaudenzio Meneghesso, Matteo Meneghini, Hervé Blanck, Jan Grünenpütt, Daniel Sommer, Ding Yuan Chen, Kai-Hsin Wen, Jr-Tai Chen, Enrico Zanoni
Publikováno v:
IEEE Transactions on Electron Devices. 70:3005-3010
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4162cb889aa56efb52b179f28dd1d1a
https://doi.org/10.1109/ted.2023.3270134
https://doi.org/10.1109/ted.2023.3270134
Autor:
F. Chiocchetta, C. De Santi, F. Rampazzo, K. Mukherjee, Jan Grünenpütt, Daniel Sommer, Hervé Blanck, Benoit Lambert, A. Gerosa, G. Meneghesso, E. Zanoni, M. Meneghini
Publikováno v:
Microelectronics Reliability
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::46ccbf1b52b1d98d3cdb90fc4c8f192f
Autor:
Zhan Gao, Fabiana Rampazzo, Matteo Meneghini, Nicola Modolo, Carlo De Santi, Hervé Blanck, Hermann Stieglauer, Daniel Sommer, Jan Grünenpütt, Olof Kordina, Jr-Tai Chen, J-C Jacquet, C. Lacam, S. Piotrowicz, Gaudenzio Meneghesso, Enrico Zanoni
Publikováno v:
Microelectronics Reliability
On-wafer robustness and short-term reliability of 0.15 μm AlGaN/GaN HEMTs, fabricated on AlGaN buffer with and without a thin AlGaN “spike” layer between channel and buffer layers, have been compared. Results of DC characterization showed that d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c8135db5f7f6fa634eb1a017542fcb47
http://hdl.handle.net/11577/3415139
http://hdl.handle.net/11577/3415139
Autor:
Jan Grünenpütt, Enrico Zanoni, Veronica Gao Zhan, Matteo Meneghini, D. Marcon, Michél Simon-Najasek, Frank Altmann, Gaudenzio Meneghesso, Fabiana Rampazzo, Mehdi Rzin, David Poppitz, Andreas Graff, Benoit Lambert, Hervé Blanck, K. Riepe, Helmut Jung
In this article, we present the results of on-wafer short-term (24 h) stress tests carried out on 0.25- $\mu \text{m}$ AlGaN/GaN HEMTs. Devices on-wafer were submitted to 24-h dc tests, at various gate and drain voltage values corresponding to dissip
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a75437cc012539ca4432f8e66f2f9c99
http://hdl.handle.net/11577/3349638
http://hdl.handle.net/11577/3349638
Autor:
Ding-Yuan Chen, Axel R Persson, Kai-Hsin Wen, Daniel Sommer, Jan Grünenpütt, Hervé Blanck, Mattias Thorsell, Olof Kordina, Vanya Darakchieva, Per O Å Persson, Jr-Tai Chen, Niklas Rorsman
Publikováno v:
Semiconductor Science and Technology. 37:035011
The impact on the performance of GaN high electron mobility transistors (HEMTs) of in situ ammonia (NH3) pre-treatment prior to the deposition of silicon nitride (SiN) passivation with low-pressure chemical vapor deposition (LPCVD ) is investigated.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a022fad3b966822df27fd0a03c03742
https://doi.org/10.1088/1361-6641/ac4b17
https://doi.org/10.1088/1361-6641/ac4b17
Autor:
V. Brunel, Hervé Blanck, A. M. Couturier, Laurent Brunel, C. Teyssandier, S. Driad, Didier Floriot, Hermann Stieglauer, Christophe Chang
Publikováno v:
2019 14th European Microwave Integrated Circuits Conference (EuMIC).
This work is focused on both experimental and modelling analysis of the temperature effect on $0.25- \mu \mathrm{m}$ AlGaN/GaN HEMT performances. The temperature-dependence is analyzed by means of DC and Load-Pull measurement in the temperature range
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45b39f80f438f5ad11b1f1da85e59cf6
https://doi.org/10.23919/eumic.2019.8909408
https://doi.org/10.23919/eumic.2019.8909408
Autor:
Helmut Jung, Sara Martin-Horcajo, Hervé Blanck, Martin Kuball, Benoit Lambert, James W Pomeroy
Publikováno v:
Martin Horcajo, S, Pomeroy, J, Lambert, B, Jung, H, Blanck, H & Kuball, M 2016, ' Transient Thermoreflectance for Gate Temperature Assessment in Pulse Operated GaN-based HEMTs ', IEEE Electron Device Letters, vol. 37, no. 9, pp. 1197-1200 . https://doi.org/10.1109/LED.2016.2595400
An experimental method to measure the gate metal temperature of GaN-based high electron mobility transistors is demonstrated. The technique is based on transient thermoreflectance measurements performed from the backside of the device. The thermorefl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c404f1e5a0f3dea81ee0da73fbb15be
https://doi.org/10.1109/led.2016.2595400
https://doi.org/10.1109/led.2016.2595400
Autor:
Frank Altmann, Michél Simon-Najasek, David Poppitz, Mikael Broas, Helmut Jung, Andreas Graff, Hervé Blanck
Publikováno v:
Microelectronics Reliability. 64:541-546
GaN/AlGaN HEMT structures are observed to undergo a reversible, drastic change in the leakage current when covered with an additional polymer passivation layer. The polymer layer induces a stress on the HEMT structures, which initiates material migra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3bc432a632576282d5eef766e01456ab
https://doi.org/10.1016/j.microrel.2016.07.050
https://doi.org/10.1016/j.microrel.2016.07.050
Autor:
Niklas Rorsman, Mattias Thorsell, Jorg Splettstoesser, Hans Hjelmgren, Sebastian Gustafsson, Hervé Blanck, Jim Thorpe, Olle Axelsson, Thomas Roedle
Publikováno v:
IEEE Transactions on Electron Devices. 63:326-332
This paper investigates the impact of different iron (Fe) buffer doping profiles on trapping effects in microwave AlGaN/gallium nitride (GaN) high electron mobility transistors (HEMTs). We characterize not only the current collapse due to trapping in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49428d02e7013af24ee6fc8589cd932d
https://doi.org/10.1109/ted.2015.2499313
https://doi.org/10.1109/ted.2015.2499313
Autor:
M. Grunwald, J. Van de Casteele, S. Van Den Berghe, C. Gourdon, M. Hollmer, H. Stuhldreier, D. Bouw, Benoit Lambert, M. Raoult, Hervé Blanck, E. Durand, Andrew Barnes
Publikováno v:
Microelectronics Reliability. 114:113894
This paper describes the test plan and the main results achieved by UMS during a space evaluation of its second generation 0.5 μm GaN RF power bar technology, called GH50-20. The space evaluation tests results are summarised: a life time higher than
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c7860333a50687569361f25be76a2db
https://doi.org/10.1016/j.microrel.2020.113894
https://doi.org/10.1016/j.microrel.2020.113894