Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Hertog, M. I. Den"'
Autor:
Dimkou, I., Harikumar, A., Donatini, F., Lähnemann, J., Hertog, M. I. den, Bougerol, C., Bellet-Amalric, E., Mollard, N., Ajay, A., Ledoux, G., Purcell, S. T., Monroy, E.
Publikováno v:
Nanotechnology 31, 204001 (2020)
In this paper, we describe the design and characterization of 400-nm-long (88 periods) AlxGa1-xN/AlN (0 < x < 0.1) quantum dot superlattices deposited on self-assembled GaN nanowires for application in electron-pumped ultraviolet sources. The optical
Externí odkaz:
http://arxiv.org/abs/1911.13133
Autor:
Ajay, A., Lim, C. B., Browne, D. A., Polaczynski, J., Bellet-Amalric, E., Bleuse, J., Hertog, M. I. den, Monroy, E.
Publikováno v:
A. Ajay et al., Nanotechnology 28, 405204 (2017)
In this paper, we study band-to-band and intersubband characteristics of GaN/AlN heterostructures (planar and nanowires) structurally designed to absorb in the short-wavelength infrared region, particularly at 1.55 microns. We compare the effect of d
Externí odkaz:
http://arxiv.org/abs/1705.04096
Autor:
Ajay, A., Schörmann, J., Jimenez-Rodriguez, M., Lim, C. B., Walther, F., Rohnke, M., Mouton, I., Amichi, L., Bougerol, C., Hertog, M. I. Den, Eickhoff, M., Monroy, E.
Publikováno v:
Journal of Physics D: Applied Physics 49, 445301 (2016)
We present a study of germanium as n-type dopant in wurtzite GaN films grown by plasma-assisted molecular beam epitaxy, reaching carrier concentrations of up to 6.7E20 cm-3 at 300K, well beyond the Mott density. The Ge concentration and free carrier
Externí odkaz:
http://arxiv.org/abs/1604.00231
Autor:
Dimkou, I, Harikumar, A, Donatini, F, Lähnemann, J, Hertog, M I den, Bougerol, C, Bellet-Amalric, E, Mollard, N, Ajay, A, Ledoux, G, Purcell, S T, Monroy, E
Publikováno v:
Nanotechnology; 5/15/2020, Vol. 31 Issue 20, p1-15, 15p
Autor:
Hertog, M I den, Rouviere, J L, Schmid, H, Cooper, D, Björk, M T, Riel, H, Dhalluin, F, Gentile, P, Ferret, P, Oehler, F, Baron, T, Rivallin, P, Karg, S, Riess, W
Publikováno v:
Journal of Physics: Conference Series; 2010, Vol. 209 Issue 1, p012027-012030, 4p