Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Herschel M. Marchman"'
Autor:
Herschel M. Marchman
Publikováno v:
Single Frequency Semiconductor Lasers.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72d9a593b3aa4bcc49ddfbc815f5b3dd
https://doi.org/10.1117/12.2284083
https://doi.org/10.1117/12.2284083
Autor:
Herschel M. Marchman
Publikováno v:
Microelectronic Engineering. :597-602
Minimization of the relative offset between measurement tools is referred to as matching. One could use a member in the set of tools as a reference, but the question arises of which one is most correct. Furthermore, it is desirable for a reference to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2540414678b96a6c5c5a372d0a66aaf3
https://doi.org/10.1016/s0167-9317(98)00140-3
https://doi.org/10.1016/s0167-9317(98)00140-3
Autor:
Herschel M. Marchman, G. C. Wetsel
Publikováno v:
Review of Scientific Instruments. 64:1248-1252
A large‐nanostructure probe with optically guided macroscopic scanning has been developed for high‐resolution imaging and characterization of nanostructures. The novel optical viewing system allows placement of the imaging tip to within 1 μm of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75925b7e5221b7502d5eba52002a4405
https://doi.org/10.1063/1.1144125
https://doi.org/10.1063/1.1144125
Autor:
Carmelo F. Scrudato, Herschel M. Marchman, Steven B. Herschbein, M. Abramo, Chad Rue, Lawrence S. Fischer
Publikováno v:
International Symposium for Testing and Failure Analysis.
FIB techniques have provided a means for the nanometer-scale spatially confined etching and deposition processes required during repair or editing of advanced integrated circuit (IC) prototypes and lithographic masks. Primary sample properties that c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::549ef261b9ef22c34df2fe1069cb1116
https://doi.org/10.31399/asm.cp.istfa2003p0348
https://doi.org/10.31399/asm.cp.istfa2003p0348
Autor:
Herschel M. Marchman, Nichole Dunham
Publikováno v:
SPIE Proceedings.
To first order, the use of AFM as a reference tool potentially offers a large improvement over pre'ious techniques for matching and calibration of on-line CL)-SEMs. However, the utility of this approach depends on the validity of the assumption that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ed726559f32fbdfeaace62e45e32959
https://doi.org/10.1117/12.308718
https://doi.org/10.1117/12.308718
Autor:
Herschel M. Marchman, Kevin M. Monahan, Jerry E. Schlesinger, Waiman Ng, Craig W. MacNaughton
Publikováno v:
SPIE Proceedings.
The 0.13 micrometer semiconductor manufacturing generation will have transistor gate structures as small as 100 nm, creating a demand for 10 nm gate linewidth control and for measurement precision on the order of 2 nm. This process control requiremen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2640f18ab70a79fe7650ea570ea6287e
https://doi.org/10.1117/12.308721
https://doi.org/10.1117/12.308721
Autor:
Herschel M. Marchman, Joseph Edward Griffith, George W. Banke, Bhanwar Singh, Lee Edward Trimble, E. Hal Bogardus, Arnold W. Yanof, Lumdas H. Saraf, Michael T. Postek, John A. Allgair, Neal T. Sullivan, Jerry E. Schlesinger, Charles N. Archie, András E. Vladár
Publikováno v:
SPIE Proceedings.
The stringent critical dimension control requirements in cutting edge device facilities have placed significant demands on metrologists and upon the tools they use. We are developing a unified, advanced critical dimension scanning electron microscope
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b4c28b986cf18af8b7f992717a3bd53
https://doi.org/10.1117/12.308724
https://doi.org/10.1117/12.308724
Autor:
Randy A. Forcier, Herschel M. Marchman, Jerry E. Schlesinger, Waiman Ng, Harry Sewell, Suresh Kudallur, Kevin M. Monahan
Publikováno v:
SPIE Proceedings.
Statistical metrology can be defined as a set of procedures to remove systematic and random gauge error from confounded measurement data for the purpose of reducing total uncertainty. We have applied these procedures to the determination of across-ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c3a34989cdf8b160435018815323e69
https://doi.org/10.1117/12.275907
https://doi.org/10.1117/12.275907
Autor:
Jane Yan, Richard C. Elliott, Steven D. Carlson, Kevin M. Monahan, Harry Sewell, Jason C. Yee, Diane McCafferty, Randy A. Forcier, Brian L. Sheumaker, Farid Askary, Javed Sumra, Herschel M. Marchman, Rich Quattrini, Robert Bennett
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography X.
Fully automated, multi-mode CD-SEM metrology, utilizing both backscattered electron (BSE) and secondary electron (SE) detection, has been benchmarked to 180 nm critical dimensions using patterns generated by deep-UV lithography. Comparison of pure BS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae8c77cfd09c2c8943741dc508fb8fff
https://doi.org/10.1117/12.240105
https://doi.org/10.1117/12.240105
Autor:
Herschel M. Marchman
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography X.
Results from an extensive performance study on a noncontact scanning mode atomic fore microscope (AFM) are presented. The application of AFM to complement in-line CD metrology SEMs also is described.© (1996) COPYRIGHT SPIE--The International Society
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b918394ec1746e902ebfe037964fd865
https://doi.org/10.1117/12.240110
https://doi.org/10.1117/12.240110