Zobrazeno 1 - 10
of 242
pro vyhledávání: '"Herranz, Jesús"'
Autor:
Ruiz, M Gómez, Castro, Aron, Herranz, Jesús, da Silva, Alessandra, Trampert, Achim, Brandt, Oliver, Geelhaar, Lutz, Lähnemann, Jonas
(In,Ga) alloy droplets are used to catalyse the growth of (In,Ga)As nanowires by molecular beam epitaxy on Si(111) substrates. The composition, morphology and optical properties of these nanowires can be tuned by the employed elemental fluxes. To inc
Externí odkaz:
http://arxiv.org/abs/2310.05582
Quantum dot (QD) growth on high ($c_{3v}$) symmetry GaAs{111} surfaces holds promise for efficient entangled photon sources. Unfortunately, homoepitaxy on GaAs{111} surfaces suffers from surface roughness/defects and InAs deposition does not natively
Externí odkaz:
http://arxiv.org/abs/2302.00574
Autor:
Oliva, Miriam, Flissikowski, Timur, Góra, Michał, Lähnemann, Jonas, Herranz, Jesús, Lewis, Ryan B., Marquardt, Oliver, Ramsteiner, Manfred, Geelhaar, Lutz, Brandt, Oliver
Publikováno v:
ACS Appl. Nano Mater. 6, 15278-15293 (2023)
GaAs-based nanowires are among the most promising candidates for realizing a monolithical integration of III-V optoelectronics on the Si platform. To realize their full potential for applications as light absorbers and emitters, it is crucial to unde
Externí odkaz:
http://arxiv.org/abs/2211.17167
Autor:
Humaidi, Mahmoud Al, Jakob, Julian, Hassan, Ali Al, Davtyan, Arman, Schroth, Philipp, Feigl, Ludwig, Herranz, Jesús, Novikov, Dmitri, Geelhaar, Lutz, Baumbach, Tilo, Pietsch, Ullrich
Here we report on non-uniform shell growth of In(x)Ga(1-x)As onto GaAs nanowire (NW) core by molecular beam epitaxy (MBE). The growth was realized on pre-patterned silicon substrates with pitch size (p) ranging from 0.1 um to 10 um. Considering the p
Externí odkaz:
http://arxiv.org/abs/2203.04073
Autor:
Al-Humaidi, Mahmoud, Feigl, Ludwig, Jakob, Julian, Schroth, Philipp, AlHassan, Ali, Davtyan, Arman, Herranz, Jesus, Anjum, Tasser, Novikov, Dmitri, Geelhaar, Lutz, Baumbach, Tilo, Pietsch, Ullrich
Misfit strain in core-shell nanowires can be elastically released by nanowire bending in case of asymmetric shell growth around the nanowire core. In this work, we investigate the bending of GaAs nanowires during the asymmetric overgrowth by an In(x)
Externí odkaz:
http://arxiv.org/abs/2105.09665
Autor:
AlHassan, Ali, Lähnemann, Jonas, Davtyan, Arman, Al-Humaidi, Mahmoud, Herranz, Jesús, Bahrami, Danial, Anjum, Taseer, Bertram, Florian, Dey, Arka Bikash, Geelhaar, Lutz, Pietsch, Ullrich
Publikováno v:
Journal of Synchrotron Radiation 27, 1200 (2020)
Nanoprobe X-ray diffraction (nXRD) using focused synchrotron radiation is a powerful technique to study the structural properties of individual semiconductor nanowires. However, when performing the experiment under ambient conditions, the required hi
Externí odkaz:
http://arxiv.org/abs/2006.11920
Autor:
Herranz, Jesús, Corfdir, Pierre, Luna, Esperanza, Jahn, Uwe, Lewis, Ryan B., Schrottke, Lutz, Lähnemann, Jonas, Tahraoui, Abbes, Trampert, Achim, Brandt, Oliver, Geelhaar, Lutz
Publikováno v:
ACS Applied Nano Materials 3, 165 (2020)
Core-shell GaAs-based nanowires monolithically integrated on Si constitute a promising class of nanostructures that could enable light emitters for fast inter- and intrachip optical connections. We introduce and fabricate a novel coaxial GaAs/(In,Ga)
Externí odkaz:
http://arxiv.org/abs/1908.10134
Autor:
Lewis, Ryan B., Trampert, Achim, Luna, Esperanza, Herranz, Jesús, Pfüller, Carsten, Geelhaar, Lutz
We explore the Bi-surfactant-directed self-assembly and structure of InAs quantum dots grown on GaAs(110) by molecular beam epitaxy. The addition of a Bi flux during InAs deposition changes the InAs growth mode from two-dimensional (2D) Frank-van der
Externí odkaz:
http://arxiv.org/abs/1905.05303
Autor:
Lähnemann, Jonas, Hill, Megan O., Herranz, Jesús, Marquardt, Oliver, Gao, Guanhui, Hassan, Ali Al, Davtyan, Arman, Hruszkewycz, Stephan O., Holt, Martin V., Huang, Chunyi, Calvo-Almazán, Irene, Jahn, Uwe, Pietsch, Ullrich, Lauhon, Lincoln J., Geelhaar, Lutz
Publikováno v:
Nano Lett. 19, 4448 (2019)
While the properties of wurtzite GaAs have been extensively studied during the past decade, little is known about the influence of the crystal polytype on ternary (In,Ga)As quantum well structures. We address this question with a unique combination o
Externí odkaz:
http://arxiv.org/abs/1903.07372
Autor:
Lewis, Ryan B., Corfdir, Pierre, Herranz, Jesús, Küpers, Hanno, Jahn, Uwe, Brandt, Oliver, Geelhaar, Lutz
Publikováno v:
Nano Lett. 2017, 17, 4255-4260
Surface energies play a dominant role in the self-assembly of three dimensional (3D) nanostructures. In this letter, we show that using surfactants to modify surface energies can provide a means to externally control nanostructure self-assembly, enab
Externí odkaz:
http://arxiv.org/abs/1704.08014