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Autor:
Hernandez Jacob Anthony, B. Kardasz, Deniz Bozdag, Steve Watts, Mustafa Pinarbasi, Jorge Vasquez, Thomas Boone, Chin Yuan-Tung, Georg Wolf, Pradeep Manandhar
Publikováno v:
IEEE Magnetics Letters. 11:1-4
The various memory applications such as embedded nonvolatile memory, embedded static random-access memory, and standalone dynamic random-access memory have different requirements for the performance of the perpendicular magnetic tunnel junction (pMTJ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4caa9056300e217f283740cd570788f7
https://doi.org/10.1109/lmag.2020.3001487
https://doi.org/10.1109/lmag.2020.3001487
