Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Hermann Statz"'
Autor:
Manfred R. Kuehnle, Hermann Statz
Publikováno v:
NIP & Digital Fabrication Conference. 17:239-242
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f2e57c5fbeed517d077e74bd1b4b79f
https://doi.org/10.2352/issn.2169-4451.2001.17.1.art00050_1
https://doi.org/10.2352/issn.2169-4451.2001.17.1.art00050_1
Publikováno v:
IEEE Transactions on Electron Devices. 21:549-562
Small signal and noise characteristics for GaAs field-effect transistors are derived with the saturated drift velocity of the carriers underneath the gate taken into account. The noise contributed by the saturated carriers is nonnegligible and in mos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bbc1a9f2fd350ef3ea9d880d0dc713b
https://doi.org/10.1109/t-ed.1974.17966
https://doi.org/10.1109/t-ed.1974.17966
Publikováno v:
IEEE Transactions on Electron Devices. 34:2565-2568
It is shown that source and drain charges are not state variables in an FET, especially for source-drain voltages near zero. This behavior, observed in the model proposed in [2], is a genuine manifestation of the physics of FET's and is not a sign of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0d14fd4436e0e9c7325f87bf67065d9
https://doi.org/10.1109/t-ed.1987.23353
https://doi.org/10.1109/t-ed.1987.23353
Publikováno v:
IEEE Transactions on Electron Devices. 34:160-169
We have developed a GaAs FET model suitable for SPICE Circuit simulations. The dc equations are accurate to about 1 percent of the maximum drain current. A simple but accurate interpolation formula for drain current as a function of gate-to-source vo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::426c9f301aeb86c56301bd604daffc2b
https://doi.org/10.1109/t-ed.1987.22902
https://doi.org/10.1109/t-ed.1987.22902
Publikováno v:
IEEE Transactions on Electron Devices. 23:1075-1085
The noise and signal properties of Read-type avalanche diodes under large-signal levels are examined. In contrast to most other previous theories, we include the saturation current in the equations rigorously from the beginning. We find that the nois
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3e7093c2bbc28a4e6e65d7cdddcdf18
https://doi.org/10.1109/t-ed.1976.18539
https://doi.org/10.1109/t-ed.1976.18539
Publikováno v:
IEEE Transactions on Electron Devices. 25:22-33
In this paper we show that very large displacement currents may flow in high power Read diodes, especially when they are operated in the pulsed mode. These displacement currents may have peak amplitudes which are larger than the maximum possible cond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::376b81ddbf1b1166af7037130b3757ee
https://doi.org/10.1109/t-ed.1978.19027
https://doi.org/10.1109/t-ed.1978.19027
Autor:
R.N. Wallace, Hermann Statz
Publikováno v:
IEEE Transactions on Electron Devices. 26:1064-1067
We have tested many GaAs IMPATT diodes under high power pulsed conditions and found that the best power output and efficiency occur at higher frequencies in the pulsed mode than in the CW mode. This phenomenon can be understood by considering the eff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48d1e35648a411330d7e67559ad7752a
https://doi.org/10.1109/t-ed.1979.19546
https://doi.org/10.1109/t-ed.1979.19546
Autor:
Hermann Statz
Publikováno v:
Zeitschrift für Naturforschung A. 7:506-511
Es wird die Elektronenstruktur gewisser binärer ferromagnetischer Legierungen untersucht und mit der Größe ihrer Sättigungsmagnetisierung in Verbindung gebracht. Im innenzentriert kubischen Gitter spalten die 3 d-Atomzustände in zwei energetisch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd2a0f132cd28a0683c2451d8d6b7249
https://doi.org/10.1515/zna-1952-0802
https://doi.org/10.1515/zna-1952-0802
Autor:
Hermann Statz
Publikováno v:
Zeitschrift für Naturforschung A. 5:534-543
Beim eindimensionalen Gitter wird systematisch zwischen zwei Arten von Oberflächenzuständen (O.Z.) unterschieden, je nachdem sie aus einem oder aus zwei Bändern entstammen. Die O.Z. erster Art werden aus einem neuen, einfachen Gesichtspunkt heraus
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ee269d379f492ba00ca84074282c963
https://doi.org/10.1515/zna-1950-1003
https://doi.org/10.1515/zna-1950-1003
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 19:801-813
An attempt is made to determine some of the factors responsible for the noise performance of avalanche diodes. In particular we are interested whether there are any lower lids in the noise measure. We derive a theorem which shows that there is a lowe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d8407116b90b70849ac60ae8778b6ee
https://doi.org/10.1109/tmtt.1971.1127643
https://doi.org/10.1109/tmtt.1971.1127643