Zobrazeno 1 - 10
of 175
pro vyhledávání: '"Hermann Massler"'
Autor:
Maurizio Burla, Claudia Hoessbacher, Wolfgang Heni, Christian Haffner, Yuriy Fedoryshyn, Dominik Werner, Tatsuhiko Watanabe, Hermann Massler, Delwin L. Elder, Larry R. Dalton, Juerg Leuthold
Publikováno v:
APL Photonics, Vol 4, Iss 5, Pp 056106-056106-11 (2019)
Broadband electro-optic intensity modulators are essential to convert electrical signals to the optical domain. The growing interest in terahertz wireless applications demands modulators with frequency responses to the sub-terahertz range, high power
Externí odkaz:
https://doaj.org/article/f90567841de547009d930da806bcc3b1
Publikováno v:
2021 16th European Microwave Integrated Circuits Conference (EuMIC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08c9ae4ea69af56c04b5be12752c9d2b
https://doi.org/10.23919/eumic50153.2022.9783623
https://doi.org/10.23919/eumic50153.2022.9783623
Autor:
Laurenz John, Axel Tessmann, Arnulf Leuther, Thomas Merkle, Hermann Massler, Sebastien Chartier
In this letter, we report on the development of highgain WR-1.5 amplifier circuits, utilizing a transferred-substrate InGaAs-on-insulator (InGaAs-OI) high-electron-mobility transistor (HEMT) technology on Si with 20-nm gate length. A six-stage and a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e8b1dc907717dfee67ae2581156754d6
https://doi.org/10.24406/h-418611
https://doi.org/10.24406/h-418611
This article reports the development of high-gain cascode amplifier circuits in the frequency range around 670 GHz. The cascode circuits are based on a 35-nm metamorphic high-electron-mobility transistor (HEMT) technology. Till date, only common-sour
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::42bf57504afed892cedfda8cae921e50
https://publica.fraunhofer.de/handle/publica/429469
https://publica.fraunhofer.de/handle/publica/429469
Autor:
Peter Brückner, Oliver Ambacher, Christian Friesicke, Hermann Massler, Maciej Cwiklinski, Rudiger Quay, Stefano Leone, Sebastian Krause
Publikováno v:
2020 IEEE/MTT-S International Microwave Symposium (IMS).
We report on two state-of-the-art G-band (140–220 GHz) GaN amplifiers. Employing a novel concept of a broadband and compact interstage matching network allows for incorporating a high number of gain stages. The first 10-stage amplifier (AMPl) can p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43a3751d31bbccf24f58913c2794de29
https://doi.org/10.1109/ims30576.2020.9224041
https://doi.org/10.1109/ims30576.2020.9224041
Autor:
Oliver Ambacher, Michael Schlechtweg, Bersant Gashi, Arnulf Leuther, Markus Rosch, Dominik Meier, Laurenz John, Axel Tessmann, Hermann Massler
Publikováno v:
2020 IEEE/MTT-S International Microwave Symposium (IMS).
In this paper, the design and performance of a medium-power amplifier (MPA) submillimeter-wave monolithic integrated circuit (S-MMIC) is presented. The MPA demonstrates a flat small-signal gain of approximately 20 dB, measured over a frequency span f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::883ea82f9f7fb107525f5c5bad5c55b6
https://doi.org/10.1109/ims30576.2020.9223968
https://doi.org/10.1109/ims30576.2020.9223968
Autor:
D. Hillerkuss, Claudia Hoessbacher, Juerg Leuthold, Larry R. Dalton, Wolfgang Heni, Yuriy Fedoryshyn, Yannick Salamin, Christian Haffner, Tatsuhiko Watanabe, Maurizio Burla, Dominik Werner, Hermann Massler, Delwin L. Elder
Publikováno v:
Proceedings of SPIE, 11307
Broadband Access Communication Technologies XIV
Proc. SPIE 11307, Broadband Access Communication Technologies
Broadband Access Communication Technologies XIV
Proc. SPIE 11307, Broadband Access Communication Technologies
We recently demonstrated modulators based on plasmonic technology displaying a flat frequency response reaching 500 GHz, high linearity and power handling. We discuss their potential for extending microwave photonics (MWP) applications to the sub-THz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cee09fcdb673b29ea4afd7a1ca310524
https://hdl.handle.net/20.500.11850/425379
https://hdl.handle.net/20.500.11850/425379
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 8:1440-1450
The design of RF contact pads is a challenging task, especially when operating in the high millimeter-wave frequency range up to 325 GHz. The pads need to fulfill low loss, low distortion, probe ability, and packagability. Compared to the dimensions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::825c544e71e78445d55319d49bbf6010
https://doi.org/10.1109/tcpmt.2018.2811482
https://doi.org/10.1109/tcpmt.2018.2811482
Autor:
Christian Friesicke, Arnulf Leuther, Friedbert van Raay, Oliver Ambacher, Sandrine Wagner, Y. Campos-Roca, Ana Belen Amado-Rey, Hermann Massler
Publikováno v:
IEEE Transactions on Terahertz Science and Technology. 8:357-364
This paper reports on the first stacked field-effect transistor (stacked-FET) submillimeter-wave monolithic integrated circuit (S-MMIC) power amplifier cell operating at 0.3 THz and the first stacked-FET medium power amplifier (MPA) at 240 GHz. Both
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4adfd099b00deb850187d13ba33b8798
https://doi.org/10.1109/tthz.2018.2801562
https://doi.org/10.1109/tthz.2018.2801562
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 65:4901-4913
This paper revises the efficiency optimization equations for magnetic-transformer-based power combiner/ divider impedance transformation networks (e.g., distributed active transformer). It evaluates their usability for high millimeter-wave frequencie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4b73b63590385686433a214d5cfc41a
https://doi.org/10.1109/tmtt.2017.2729514
https://doi.org/10.1109/tmtt.2017.2729514