Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Herman C Chui"'
Autor:
Steven A. Maranowski, P. N. Grillot, Changhua Chen, A. J. Moll, Herman C Chui, T. D. Osentowski, B. W. Liang, J.-W. Huang, M. J. Peanasky, S. A. Stockman, C. P. Kuo
Publikováno v:
Journal of Electronic Materials. 28:916-925
Oxygen incorporation in AlyIn1−yP (y ∼ 0.5) grown by metalorganic chemical vapor deposition (MOCVD) has been studied as a function of PH3 flow, growth temperature, and alloy composition. Both O2 and diethylaluminum ethoxide (DEAlO) were employed
Autor:
Herman C. Chui, Timothy B. Boykin
Publikováno v:
Physical Review B. 55:7091-7100
Autor:
C. P. Kocot, D. Collins, F. A. Kish, P.N. Grillot, T. S. Tan, E. I. Chen, I.-H. Tan, Gloria E Hofler, M. Ochiai-Holcomb, Nathan F. Gardner, M. G. Craford, Michael R. Krames, S. A. Stockman, M. Hueschen, G. Sasser, Carrie Carter-Coman, B. Loh, Herman C Chui, J. Posselt, J.-W. Huang
Publikováno v:
Applied Physics Letters. 75:2365-2367
A truncated-inverted-pyramid (TIP) chip geometry provides substantial improvement in light extraction efficiency over conventional AlGaInP/GaP chips of the same active junction area (∼0.25 mm2). The TIP geometry decreases the mean photon path-lengt
Autor:
T. S. Tan, S. A. Stockman, Nathan F. Gardner, J.-W. Huang, F. A. Kish, Michael R. Krames, Herman C Chui, C. P. Kocot, N. Moll, E. I. Chen
Publikováno v:
Applied Physics Letters. 74:2230-2232
Improvement of 1.4× in the external quantum efficiency and luminous efficiency (lm/W) of transparent-substrate (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes is demonstrated. The improvement is accomplished by reducing the thickness of the active l
Publikováno v:
SPIE Proceedings.
This article describes a new hybrid fiber-optic component invented by the authors, iPBCTM/iPBS$_TM), which has the functionality of a Polarization Beam Combiner/splitter (PBC/PBS) with isolation in the backward optical path. 0.3dB combining loss and
Autor:
S.A. Maranowski, J.-W. Huang, Nathan F. Gardner, Herman C Chui, Michael R. Krames, P.N. Grillot
Publisher Summary This chapter focuses on the development and performance of aluminum gallium indium phosphide (AlGaInP) light-emitting diodes (LEDs). The AlGaInP quaternary alloy system is widely used for visible wavelength optical devices such as l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c7747ee5f8c280f8afc3a6ad97f7796
https://doi.org/10.1016/s0080-8784(08)62488-6
https://doi.org/10.1016/s0080-8784(08)62488-6
Autor:
Eric L. Martinet, James S. Harris, Gary L. Woods, Martin M. Fejer, Bruce A. Richman, Chris W. Rella, Herman C. Chui
Publikováno v:
Quantum Well and Superlattice Physics V.
Conduction band intersubband absorption and second harmonic generation (SHG) are demonstrated in doubly resonant asymmetric step high indium content quantum wells (QW) grown on a GaAs substrate. Intersubband absorption peaks at 5.51 micrometers and 3
Conference
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