Zobrazeno 1 - 10
of 111
pro vyhledávání: '"Heribert Wiedemeier"'
Autor:
Heribert Wiedemeier
Publikováno v:
Journal of Solid State Chemistry. 206:113-116
The observed linear (Na-, K-halides) and near-linear (Mg-, Sr-, Zn-, Cd-, and Hg-chalcogenides) dependences of Schottky constants on reciprocal interatomic distances yield the relation log K S = ( ( s s 1 / T ) + i s ) 1 / d ( A − B ) + ( s i 1 / T
Autor:
Heribert Wiedemeier
Publikováno v:
Journal of Solid State Chemistry. 183:2317-2323
Correlations of computed Schottky constants ( K S = [ V ″ Zn ] [ V S · · ] ) with structural and thermodynamic properties showed linear dependences of log KS on the lattice energies for the Zn-, Cd-, Hg-, Mg-, and Sr-chalcogenides and for the Na-
Autor:
Heribert Wiedemeier
Publikováno v:
Zeitschrift für anorganische und allgemeine Chemie. 632:1717-1727
With the equilibrium constants for atomic vacancies, KS, for electronic charge carriers, Ki, and for the vaporization of ZnS, Kp, the densities of atomic point defects and of electronic charge carriers were obtained as a function of temperature. The
Autor:
Heribert Wiedemeier
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 24:450-458
The synthesis and postgrowth treatment of luminescent materials frequently involve solid-vapor interactions. Because the underlying multispecies, multireaction equilibria are rather complex, quantitative correlations between synthesis conditions, vac
Autor:
Heribert Wiedemeier, Mark A. Hutchins
Publikováno v:
Zeitschrift für anorganische und allgemeine Chemie. 632:211-227
The high temperature vaporization pattern of Hg3Te2I2(s,l) shows four distinctly different regimes, similar to those of the HgTe vaporization. The most predominant species in the vapor phase in all four regimes is HgI2(g), followed by Hg(g) and, poss
Autor:
Heribert Wiedemeier, Yu-Ru Ge
Publikováno v:
Journal of Electronic Materials. 28:91-97
As part of a systematic investigation of the effects of substrate surfaces on epitaxial growth, the transient behavior of Hg1−xCdxTe film growth on (111)B CdTe by chemical vapor transport (CVT) has been studied as a function of growth time under ve
Autor:
Yu-Ru Ge, Heribert Wiedemeier
Publikováno v:
Journal of Electronic Materials. 27:891-899
Publikováno v:
Journal of Crystal Growth. 187:72-80
Transient epitaxial growth experiments of Hg1−xCdxTe on ( 1 0 0 )CdTe substrates by chemical vapor transport (CVT), using HgI2 as a transport agent, were performed at normal and reduced gravity during the USML-2 flight. The carrier mobility at 77 K
Publikováno v:
Zeitschrift f�r anorganische und allgemeine Chemie. 623:1843-1846
The structure of cubic Hg3TeI4 was determined from powder data. The four positions of the cubic closestpacking of the anions are statistically occupied by 0.8 Te-atoms and 3.2 I-atoms. The two types of tetrahedral holes are occupied to the extent of
Autor:
Mark A. Hutchins, Heribert Wiedemeier
Publikováno v:
Zeitschrift f�r anorganische und allgemeine Chemie. 622:1150-1160
The temperature-composition phase equilibria of the Hg0.8Cd0.2Te-HgI2 system were investigated between about 100 and 800 °C using Debye-Scherrer powder X-ray diffraction techniques, differential thermal analysis, differential scanning calorimetry, a