Zobrazeno 1 - 10
of 104
pro vyhledávání: '"Hergo-Heinrich Wehmann"'
Autor:
Stefan Wolter, Hendrik Spende, Jan Gülink, Jana Hartmann, Hergo-Heinrich Wehmann, Andreas Waag, Andreas Lex, Adrian Avramescu, Hans-Jürgen Lugauer, Norwin von Malm, Jean-Jacques Drolet, Martin Strassburg
Publikováno v:
Nanomaterials, Vol 11, Iss 4, p 836 (2021)
Besides high-power light-emitting diodes (LEDs) with dimensions in the range of mm, micro-LEDs (μLEDs) are increasingly gaining interest today, motivated by the future applications of μLEDs in augmented reality displays or for nanometrology and sen
Externí odkaz:
https://doaj.org/article/506115c3f3724347967feda77a5473ea
Autor:
Hendrik Spende, Drolet Jean-Jacques, Hans-Jürgen Lugauer, Adrian Stefan Avramescu, Stefan Wolter, Jan Gülink, Jana Hartmann, Andreas Waag, Norwin Von Malm, Andreas Lex, Hergo-Heinrich Wehmann, Martin Strassburg
Publikováno v:
Nanomaterials
Volume 11
Issue 4
Nanomaterials 2021, 11(4), 836; https://doi.org/10.3390/nano11040836--Nanomaterials (Basel)--http://www.bibliothek.uni-regensburg.de/ezeit/?2662255--http://www.mdpi.com/journal/nanomaterials--https://www.ncbi.nlm.nih.gov/pmc/journals/3130/--2079-4991--2079-4991
Nanomaterials, Vol 11, Iss 836, p 836 (2021)
Volume 11
Issue 4
Nanomaterials 2021, 11(4), 836; https://doi.org/10.3390/nano11040836--Nanomaterials (Basel)--http://www.bibliothek.uni-regensburg.de/ezeit/?2662255--http://www.mdpi.com/journal/nanomaterials--https://www.ncbi.nlm.nih.gov/pmc/journals/3130/--2079-4991--2079-4991
Nanomaterials, Vol 11, Iss 836, p 836 (2021)
Besides high-power light-emitting diodes (LEDs) with dimensions in the range of mm, micro-LEDs (μLEDs) are increasingly gaining interest today, motivated by the future applications of μLEDs in augmented reality displays or for nanometrology and sen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a98130c851599a78862ce8b87f7ee424
Autor:
Andreas Waag, Frederik Luessmann, A. Rizzi, Hergo-Heinrich Wehmann, J. Malindretos, Stefanie Kroker, Jana Hartmann, Constantin Hilbrunner
Publikováno v:
Light-Emitting Devices, Materials, and Applications XXV.
In this study we present the novel approach of GaN-based high-contrast grating (HCG) mirrors as highly reflective top mirrors in GaN vertical-(external)-cavity surface-emitting lasers [V(E)CSELs]. These mirrors can well be integrated into a conventio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ec1d2d4b8bb5483d6a32fe01482aaf2
https://doi.org/10.1117/12.2578577
https://doi.org/10.1117/12.2578577
Autor:
Marcus Müller, Peter Veit, Jürgen Christen, Jana Hartmann, Hao Zhou, Gordon Schmidt, F. Bertram, Sebastian Metzner, Hergo-Heinrich Wehmann, Andreas Waag
Publikováno v:
Scientific Reports, Vol 8, Iss 1, Pp 1-8 (2018)
Scientific Reports
Scientific Reports
Higher indium incorporation in self-organized triangular nanoprisms at the edges of InGaN/GaN core-shell nanorods is directly evidenced by spectral cathodoluminescence microscopy in a scanning transmission electron microscope. The nanoprisms are term
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cd7a158031c30f369aa19731608ab85e
http://link.springer.com/article/10.1038/s41598-018-34382-y
http://link.springer.com/article/10.1038/s41598-018-34382-y
Autor:
Tansen Varghese, Johannes Ledig, Frederik Steib, Martin Dr. Straßburg, Adrian Stefan Avramescu, Lars Nicolai, Achim Trampert, Andreas Waag, Hergo-Heinrich Wehmann, Tilman Schimpke, Hans-Jürgen Lugauer, Hao Zhou, Jana Hartmann, Sönke Fündling
Publikováno v:
Journal of Crystal Growth. 476:90-98
GaN fins are 3D architectures elongated in one direction parallel to the substrate surface. They have the geometry of walls with a large height to width ratio as well as small footprints. When appropriate symmetry directions of the GaN buffer are use
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f898de6fa8c1967ff14601040a3f3c7
https://doi.org/10.1016/j.jcrysgro.2017.08.021
https://doi.org/10.1016/j.jcrysgro.2017.08.021
Autor:
Hao Zhou, Matin Sadat Mohajerani, Martin Strassburg, Barbara Szafranski, Adrian Stefan Avramescu, Tobias Voss, Jana Hartmann, Hergo-Heinrich Wehmann, Tilman Schimpke, Angelina Vogt, Andreas Waag, Sönke Fündling
Publikováno v:
Journal of Materials Research. 32:2456-2463
The spectrally and temporally resolved luminescence of three-dimensional (3D) InGaN/GaN microrods and planar light emitting diode (LED) structures is studied for different energy densities of fs-laser excitation pulses and for different sample temper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c707eec60ced33635298f14eb0ce5346
https://doi.org/10.1557/jmr.2017.212
https://doi.org/10.1557/jmr.2017.212
Autor:
Andreas Waag, Achim Trampert, Irene Manglano Clavero, Christoph Margenfeld, Hao Zhou, Hendrik Spende, Frederik Steib, Hergo-Heinrich Wehmann, Hans-Jürgen Lugauer, Jana Hartmann, Lars Nicolai, Martin Strassburg, Angelina Jaros, Tobias Voss, Johannes Ledig, Adrian Stefan Avramescu
Publikováno v:
Phys. Status Solidi B, 256, 1800477, 2019--Proceedings of the ... International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors--0370-1972
GaN fins on GaN-on-sapphire templates are fabricated by continuous mode selective area metalorganic vapor phase epitaxy. The fins exhibit high aspect ratios and smooth nonpolar a-plane sidewalls with an ultra-low threading dislocation density of a fe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8e2a595958893492726d1155a1a43d9f
Autor:
Hergo-Heinrich Wehmann, Feng Yu, Andreas Waag, Klaas Strempel, Andrey Bakin, Bernd Witzigmann, Friedhard Römer, Matteo Meneghini
Publikováno v:
Semiconductor Science and Technology. 36:014002
This paper demonstrates the first vertical field-effect transistor based on gallium nitride (GaN) fin structures with an inverted p-doped channel layer. A top-down hybrid etching approach combining inductively coupled plasma reactive ion etching and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a09160286271458f81a56ad8ad70a573
https://doi.org/10.1088/1361-6641/abc5ff
https://doi.org/10.1088/1361-6641/abc5ff
Autor:
Xue Wang, Uwe Jahn, Hergo-Heinrich Wehmann, Michael Seibt, Henning Schuhmann, Andreas Waag, Sönke Fündling, Johannes Ledig
Publikováno v:
physica status solidi (a). 213:11-18
In this paper, we present the structural, optical, and electrical characterization of InGaN/GaN core-shell micro-LED structures selectively grown by metal organic vapor phase epitaxy (MOVPE) in arranged arrays. In particular we analyze the core-shell
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d478e0b29bdafd8bffdb59f2ffc088f8
https://doi.org/10.1002/pssa.201532485
https://doi.org/10.1002/pssa.201532485
Autor:
Andreas Waag, Jana Hartmann, Winfried Daum, Tilman Schimpke, Henning Schuhmann, Xue Wang, Markus Bähr, Wanja Dziony, Michael Seibt, Martin Dr. Straßburg, Johannes Ledig, Matin Sadat Mohajerani, Hergo-Heinrich Wehmann, Lorenzo Caccamo, G. Lilienkamp
Publikováno v:
physica status solidi (a). 212:2830-2836
The three dimensional growth of GaN structures as a basis for the fabrication of 3D GaN core-shell LEDs has attracted substantial attention in the past years. GaN nanorods or microrods with high aspect ratios can be grown by selective area epitaxy on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8778cf7d18948a3c4fd032484fd315e2
https://doi.org/10.1002/pssa.201532316
https://doi.org/10.1002/pssa.201532316