Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Hergo H. Wehmann"'
Autor:
Martin Mandl, Tilman Schimpke, Jana Hartmann, Andreas Waag, Xue Wang, Uwe Jahn, Martin Dr. Straßburg, Hergo-H. Wehmann, Johannes Ledig
Publikováno v:
physica status solidi (a). 212:727-731
The growth mechanisms of selective area growth of GaN microcolumns by metal organic vapor phase epitaxy on patterned SiOx/sapphire templates, are investigated. Both Ga- and N-polar domains within a GaN column are detected. The growth system of mixed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c57ffe799570fabf49ef5fa7fd5c328
https://doi.org/10.1002/pssa.201400362
https://doi.org/10.1002/pssa.201400362
Autor:
Andreas Waag, Johannes Ledig, Martin Dr. Straßburg, Xue Wang, Hergo-H. Wehmann, Uwe Jahn, Martin Mandl
Publikováno v:
Journal of Crystal Growth. 384:61-65
Columnar structures of III–V semiconductors recently attract considerable attention because of their potential applications in novel optoelectronic and electronic devices. In the present study, the mechanisms for the growth of catalyst-free self-or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::608d0cb826d3e4f074ad5e89add82305
https://doi.org/10.1016/j.jcrysgro.2013.09.015
https://doi.org/10.1016/j.jcrysgro.2013.09.015
Autor:
Werner Bergbauer, Henning Riechert, Stephan Merzsch, Jiandong Wei, Johannes Ledig, Richard Neumann, Andreas Waag, Uwe Jahn, Sönke Fündling, Martin Dr. Straßburg, Mohamed Al Suleiman, Shunfeng Li, Hergo H. Wehmann, Milena Erenburg, Xue Wang, Achim Trampert
Publikováno v:
physica status solidi (c)
Vertically aligned GaN nanorods have recently obtained substantial interest as a new approach to solid state lighting. In comparison to conventional planar LEDs, 3D NanoLEDs are expected to offer substantial advantageous: very low defect density, qua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3cfe80bbaccf5efa331c7de067738239
Autor:
Thomas Weimann, A. C. Mofor, E. Schlenker, Andreas Waag, Andrey Bakin, B. Postels, Hergo-H. Wehmann, Peter Hinze
Publikováno v:
physica status solidi (b). 244:1473-1477
Zinc oxide (ZnO) nanorods were grown by a wet chemical approach and by vapor phase transport. To explore the electrical properties of individual nanostructures current-voltage (I-V) characteristics were obtained by using an atomic force microscope (A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ef8774260470d7305f7afe1113afcab
https://doi.org/10.1002/pssb.200675111
https://doi.org/10.1002/pssb.200675111
Autor:
N. Izyumskaya, Vitaliy Avrutin, Sibylle Sievers, J. Stoemenos, A. Che Mofor, Hergo-H. Wehmann, M. Albrecht, Wladimir Schoch, Andreas Waag, U. Siegner, Abdelhamid El-Shaer, H. Ahlers, Andrey Bakin
Publikováno v:
Superlattices and Microstructures. 39:381-386
There have been controversial reports about the type of magnetic coupling and hence ferromagnetism in ZnMnO. We have investigated the magnetic properties of ZnxMn1−xO layers grown by Molecular Beam Epitaxy (MBE) on sapphire substrates. At first sig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6db3d950846f5abbcd159dcb3123fa4f
https://doi.org/10.1016/j.spmi.2005.08.063
https://doi.org/10.1016/j.spmi.2005.08.063
Autor:
P. Velling, Werner Prost, Franz-Josef Tegude, Hergo-H. Wehmann, S. Neumann, Andreas Schlachetzki, Andrey Bakin
Publikováno v:
Journal of Crystal Growth. 248:380-383
We present in this work the first monolithic integration of a III/V resonant tunnelling diode (RTD) on an exactly (0 0 1)-oriented Si substrate. The crystalline quality of the InP starting layer and that of the RTD was determined by high-resolution X
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8734b62baee72b11244128cc30b3b403
https://doi.org/10.1016/s0022-0248(02)01852-3
https://doi.org/10.1016/s0022-0248(02)01852-3
Autor:
Stephan Merzsch, M. Al-Suleiman, Ü. Sökmen, Shunfeng Li, Sönke Fündling, Jiandong Wei, Hergo-H. Wehmann, Richard Neumann, Andreas Waag, Xue Wang
Publikováno v:
physica status solidi (c)
Polarity dependence (N-polar (000-1) and Ga-polar (0001)) of surface photovoltage of epitaxially grown, vertically aligned GaN nanorods has been investigated by photo-assisted Kelvin probe force microscopy (KPFM). Commercial GaN substrates with known
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::44ed4e8512401264b9405077dc86525f
Metal-organic vapour-phase epitaxy of gallium nitride nanostructures for optoelectronic applications
Publikováno v:
Microelectronics Journal. 40:333-335
The two main topics with respect to better gallium nitride (GaN)-based optoelectronic device performance are the improvement of crystal quality and of light extraction. Concerning the first topic, the epitaxial growth of GaN-related materials has to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e10131801e8cee065a1ed364e46a7a2
https://doi.org/10.1016/j.mejo.2008.07.054
https://doi.org/10.1016/j.mejo.2008.07.054
High-quality In0.53Ga0.47As on exactly (001)-oriented Si grown by metal-organic vapour-phase epitaxy
Autor:
K. Dettmer, H. Iber, Hergo-H. Wehmann, A. Koch, G.-P. Tang, M. Hollfelder, S. Mo, Erwin Peiner, A. Bartels, Andreas Schlachetzki
Publikováno v:
Journal of Crystal Growth. 172:44-52
In this paper we report on results of an optimized growth process of In0.53Ga0.47As on exactly (001)-oriented Si substrates by low-pressure metal-organic vapour-phase epitaxy (LP-MOVPE). The crystalline perfection of the InGaAs as well as an intermed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43e25be1d8099aa11e04e393eab64974
https://doi.org/10.1016/s0022-0248(96)00736-1
https://doi.org/10.1016/s0022-0248(96)00736-1
Autor:
XUE WANG, SHUNFENG LI, SÖNKE FÜNDLING, JIANDONG WEI, MILENA ERENBURG, JOHANNES LEDIG, HERGO H. WEHMANN, ANDREAS WAAG, WERNER BERGBAUER, MARTIN MANDL, MARTIN STRASSBURG, ULRICH STEEGMÜLLER
Publikováno v:
Selected Topics in Electronics and Systems ISBN: 9789814536844
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::776281f2707d0e0a8f7b4ea6af14f31f
https://doi.org/10.1142/9789814541862_0004
https://doi.org/10.1142/9789814541862_0004
