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pro vyhledávání: '"Her-Ming Shieh"'
Autor:
Yu-Shyan Lin, Yen-Wei Chen, Wei-Chou Hsu, Tzong-Bin Wang, Yeong-Jia Chen, Yih-Juan Li, Her-Ming Shieh
Publikováno v:
IEEE Transactions on Electron Devices. 49:221-225
A novel /spl delta/-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer high-electron mobility transistor (TRST-HEMT) has been successfully fabricated by low-pressure metal organic chemical vapor deposition (LP-MOCVD). Three-terminal N-shaped neg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d1f7763c0a862462141f8c082a866d0
https://doi.org/10.1109/16.981210
https://doi.org/10.1109/16.981210
