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Autor:
Her Yuan-Jan, 何源展
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In this thesis, the I/V characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) are investigated. The potential profiles are obtained by solving the Poisson's equation. Different heterostructures including abrupt,abrupt with s
In this thesis, the I/V characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) are investigated. The potential profiles are obtained by solving the Poisson's equation. Different heterostructures including abrupt,abrupt with s
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/06131583341713186698
