Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Heonjae, Jeong"'
Autor:
Heonjae Jeong, Ethan P. Kamphaus, Paul C. Redfern, Nathan T. Hahn, Noel J. Leon, Chen Liao, Lei Cheng
Publikováno v:
ACS Applied Materials & Interfaces. 15:6933-6941
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b49b0ffff0fa10fb58e5333c88b08a7a
https://doi.org/10.1021/acsami.2c20661
https://doi.org/10.1021/acsami.2c20661
Autor:
Heonjae Jeong, Edmund G. Seebauer
Publikováno v:
The Journal of Physical Chemistry C. 126:20800-20806
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00d11499d30b9c7ba1e5dc7de421b35a
https://doi.org/10.1021/acs.jpcc.2c05648
https://doi.org/10.1021/acs.jpcc.2c05648
Autor:
Wenxiang Chen, Xun Zhan, Renliang Yuan, Saran Pidaparthy, Adrian Xiao Bin Yong, Hyosung An, Zhichu Tang, Kaijun Yin, Arghya Patra, Heonjae Jeong, Cheng Zhang, Kim Ta, Zachary W. Riedel, Ryan M. Stephens, Daniel P. Shoemaker, Hong Yang, Andrew A. Gewirth, Paul V. Braun, Elif Ertekin, Jian-Min Zuo, Qian Chen
Publikováno v:
Nature Materials. 22:92-99
Electrochemical phase transformation in ion-insertion crystalline electrodes is accompanied by compositional and structural changes, including the microstructural development of oriented phase domains. Previous studies have identified prevailingly tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3cd53eae804fc295bd86a901652043b1
https://doi.org/10.1038/s41563-022-01381-4
https://doi.org/10.1038/s41563-022-01381-4
Autor:
Heonjae Jeong, Edmund G. Seebauer
Publikováno v:
The Journal of Physical Chemistry Letters. 13:9841-9847
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcc00fa191ff82be9e6617d2135bb7bd
https://doi.org/10.1021/acs.jpclett.2c02490
https://doi.org/10.1021/acs.jpclett.2c02490
Autor:
Dawei Xia, Heonjae Jeong, Dewen Hou, Lei Tao, Tianyi Li, Knight, Kristin, Anyang Hu, Kamphaus, Ethan P., Nordlund, Dennis, Sainio, Sami, Yuzi Liu, Morris, John R., Wenqian Xu, Haibo Huang, Luxi Li, Hui Xiong, Lei Cheng, Feng Lin
Publikováno v:
Proceedings of the National Academy of Sciences of the United States of America; 1/30/2024, Vol. 121 Issue 5, p1-29, 39p
Publikováno v:
ACS Applied Materials & Interfaces. 14:34059-34068
Initial synthesis of semiconducting oxides leaves behind poorly controlled concentrations of unwanted atomic-scale defects that influence numerous electrical, optical, and reactivity properties. We have discovered through self-diffusion measurements
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a24a61d0366630ff33b692f53f32c0ef
https://doi.org/10.1021/acsami.2c07672
https://doi.org/10.1021/acsami.2c07672
Autor:
Chuyi Xie, Chen Zhao, Heonjae Jeong, Tianyi Li, Luxi Li, Wenqian Xu, Zhenzhen Yang, Cong Lin, Qiang Liu, Lei Cheng, Xingkang Huang, Gui‐Liang Xu, Khalil Amine, Guohua Chen
Publikováno v:
Angewandte Chemie. 135
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::58f1453625ac1a8d711c4308869e10a4
https://doi.org/10.1002/ange.202217476
https://doi.org/10.1002/ange.202217476
Autor:
Heonjae Jeong, Edmund G. Seebauer
Publikováno v:
Journal of Vacuum Science & Technology A. 41:033203
Low bond coordination of surface atoms facilitates the injection of oxygen interstitial atoms into the bulk near room temperature from the clean surfaces of semiconducting metal oxides when exposed to liquid water, opening new prospects for postsynth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14404c186d05dc1032d9e24d80974478
https://doi.org/10.1116/6.0002467
https://doi.org/10.1116/6.0002467
Publikováno v:
Physical Chemistry Chemical Physics. 23:16423-16435
Oxygen vacancies (VO) influence many properties of ZnO in semiconductor devices, yet synthesis methods leave behind variable and unpredictable VO concentrations. Oxygen interstitials (Oi) move far more rapidly, so post-synthesis introduction of Oi to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f75bc8b8a353abe866a029ce3672dbe4
https://doi.org/10.1039/d1cp01204e
https://doi.org/10.1039/d1cp01204e
Publikováno v:
Langmuir. 36:12632-12648
Atomically clean surfaces of semiconducting oxides efficiently mediate the interconversion of gas-phase O2 and solid-phase oxygen interstitial atoms (Oi). First-principles calculations together with mesoscale microkinetic modeling are employed for Ti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f364cfebfd514c6d33318dab119f08b
https://doi.org/10.1021/acs.langmuir.0c02195
https://doi.org/10.1021/acs.langmuir.0c02195