Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Henttinen, Kimmo"'
Publikováno v:
In Handbook of Silicon Based MEMS Materials and Technologies Edition: Third Edition. 2020:721-741
Publikováno v:
In Handbook of Silicon Based MEMS Materials and Technologies Edition: Third Edition. 2020:567-580
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, A 2007 580(2):1000-1003
Publikováno v:
In Solid State Electronics 2007 51(2):328-332
Autor:
Dixit, Pradeep, Henttinen, Kimmo
Publikováno v:
In Handbook of Silicon Based MEMS Materials and Technologies Edition: Second Edition. 2016:694-712
Autor:
Henttinen, Kimmo, Suni, Tommi
Publikováno v:
In Handbook of Silicon Based MEMS Materials and Technologies Edition: Second Edition. 2016:591-598
Autor:
Aalto, Timo, Airaksinen, Veli-Matti, Albert, Stephan Gerhard, Allegato, Giorgio, Amiotti, Marco, Anttila, Olli, Auersperg, Juergen, Bonucci, Antonio, Bose, Indranil Ronnie, Braun, Tanja, Broas, Mikael, Burggraf, J., Cameron, Christopher, Candler, Rob N., Cao, Zhen, Cardoso, André, Chen, Kuo-Shen, Conte, Andrea, Cozma, Adriana, Davis, Cristina E., Dempwolf, Sophia, Dixit, Pradeep, Dost, Michael, Dragoi, Viorel, Eränen, Simo, Fain, Bruno, Figeys, B., Fischer, Andreas C., Flötgen, Christoph, Franssila, Sami, Friedberger, Alois, Fueldner, Marc, Ganchenkova, Maria, Gonzalez, Pilar, Gosálvez, Miguel A., Grimes, Michael, Haapalinna, Atte, Hagelin, Paul, Hammond, Paul, Henttinen, Kimmo, Henttonen, Vesa, Horsley, David, Hoshi, Takeo, Itoh, Satoshi, Jakobsen, Henrik, Jansen, R., Jonsson, Kerstin, Kähler, Dirk, Kannojia, Harindra Kumar, Kattelus, Hannu, Kissinger, Gudrun, Knechtel, Roy, Knese, Kathrin, Kolari, Kai, Koskenvuori, Mika, Kuisma, Heikki, Kulkarni, Amit, Laermer, Franz, Landesberger, Christof, Leinenbach, Christina, LeVasseur, Michael K., Li, Jue, Lin, Yuyuan, Lindner, Paul F., Lodewijks, K., Lofink, Fabian, Longoni, Giorgio, Luber, Sebastian Markus, Mahmud-ul-hasan, M., Mäkinen, Jari, Mäntysalo, Matti, Martin, Devin, Maspero, Federico, Mattila, Toni T., Mauri, Luca, Merz, Peter, Meyer, Doug, Moraja, Marco, Motooka, Teruaki, Müller, Gerhard, Muralt, Paul, Nieminen, Risto M., Niklaus, Frank, Oggioni, Laura, Olkkonen, Juuso, Österlund, Elmeri, Ou, Kuang-Shun, Paloheimo, Jari, Pasanen, Toni P., Paulasto-Kröckel, Mervi, Plach, Thomas, Polizzi, Jean-Philippe, Pressel, Klaus, Putkonen, Matti, Puurunen, Riikka L., Reinert, Wolfgang, Rizzi, Enea, Rochus, V., Ross, Glenn, Rottenberg, X., Sainiemi, Lauri, Savin, Hele, Schenk, Harald, Schikowski, Marc, Schulze, Matthias, Seema, S., Severi, S., Skogström, Lasse, Suga, Tadatomo, Sullivan, Scott, Suni, Tommi, Theuss, Horst, Tilli, Markku, Tilmans, H.A.C., Tittonen, Ilkka, Tofteberg, Hannah, Törmä, Pekka, Tuomikoski, Santeri, Tyholdt, Frode, Uda, Tsuyoshi, Vallin, Örjan, Valzasina, Carlo, Veijola, Timo, Viinikka, Eeva, Vogel, Dietmar, Vogl, Andreas, Vuorinen, Vesa, Westervelde, W.J., Wicht, Sebastian, Wieland, Robert, Winkler, Bernhard, Yobas, Levent, Zanotti, Luca, Zubel, I.
Publikováno v:
In Handbook of Silicon Based MEMS Materials and Technologies Edition: Third Edition. 2020:xv-xvii
Autor:
Suni, Tommi, Puurunen, Riikka L., Ylivaara, Oili, Henttinen, Kimmo, Ishida, Tadashi, Fujita, Hiroyuki
Publikováno v:
Suni, T, Puurunen, R L, Ylivaara, O, Henttinen, K, Ishida, T & Fujita, H 2010, Direct wafer bonding of ALD Al2O3 . in IEEE Workshop on Low Temperature Bonding for 3D Integration Book of Abstracts . pp. 211-223, 2nd International IEEE Workshop on Low Temperature Bonding for 3D Integration, Japan, 19/01/10 .
Atomic layer deposition (ALD) is a method to grow conformal thin films. It is a chemical vapor deposition (CVD) technique using self terminating reactions of two or more reactants. In ALD the thickness control and the thickness uniformity of the film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=355e65625b88::9b276059e9139e1b33339183d63af47d
https://cris.vtt.fi/en/publications/a8d987e3-de01-484a-97da-104a42065c66
https://cris.vtt.fi/en/publications/a8d987e3-de01-484a-97da-104a42065c66
Autor:
Chen, Peng, Xu, Dapeng, Mawst, Luke, Henttinen, Kimmo, Suni, Tommi, Suni, Ilkka, Kuech, T.F., Lau, S.S.
Publikováno v:
Chen, P, Xu, D, Mawst, L, Henttinen, K, Suni, T, Suni, I, Kuech, T F & Lau, S S 2007, Fabrication of InP/SiO 2 /Si substrate using ion-cutting process and selective chemical etching . in M Öztürk, E Gusev, H Iwai, S Koester, D Kwong, F Roozeboom & P Timans (eds), Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS 3 : New Materials, Processes and Equipment . Electrochemical Society ECS, ECS Transactions, no. 1, vol. 6, pp. 99-103, International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS-211th ECS Meeting, Chicago, Illinois, United States, 6/05/07 . https://doi.org/10.1149/1.2727392
In this study, an InP layer was transferred onto a Si substrate coated with a thermal oxide, through a process combining ion-cutting process and selective chemical etching. Compared with conventional ion-cutting of bulk InP wafers, this layer transfe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=355e65625b88::e26cde46e7515d594cc36099b69636a0
https://cris.vtt.fi/en/publications/e5c587a9-5424-42f2-8123-6fb549ae551a
https://cris.vtt.fi/en/publications/e5c587a9-5424-42f2-8123-6fb549ae551a
Publikováno v:
Luoto, H, Suni, T, Henttinen, K & Dekker, J 2006, ' Fabrication of silicon diaphragms by mechanical thinning ', Paper presented at 7th international workshop Thin Semiconductor Devices, Munich, Germany, 28/11/06-29/11/06 .
In order to allow greater freedom in MEMS designing, there is increasing interest in SOI wafers with buried structures (cavities, different support structures). A fabrication process for such wafers is presented in figure 1. Fabrication of the pre-pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=355e65625b88::3b5b892e54b62a01af50766cc3310869
https://cris.vtt.fi/en/publications/2dd61321-4d34-4c70-88a1-67378640419f
https://cris.vtt.fi/en/publications/2dd61321-4d34-4c70-88a1-67378640419f