High performance 10^0 angle-facet laser amplifiers

Autor: Wang, Z., Farre, J., Mikkelsen, Benny, Eskildsen, Lars, Stubkjær, Kristian, Collar, A. J, Henshall, G.D

Publikováno v: Wang, Z, Farre, J, Mikkelsen, B, Eskildsen, L, Stubkjær, K, Collar, A J & Henshall, G D 1990, High performance 10^0 angle-facet laser amplifiers . in 12th IEEE International Semiconductor Laser Conference . IEEE, pp. 108-109, 12th IEEE International Semiconductor Laser Conference, Davos, Switzerland, 09/09/1990 .

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1202::150db3d4a63a0e9a2d6f13979d54dbde
https://orbit.dtu.dk/en/publications/d43e88f5-7fca-483c-8a47-4619f40d804e

Deep proton-isolated lasers and proton range data for InP and GaSb.

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Forward bias voltage characteristics for (GaAl)as and (GaIn) (AsP) lasers.

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Low residual reflectivity of angled-facet semiconductor laser amplifiers.

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