Zobrazeno 1 - 10
of 97
pro vyhledávání: '"Henryk Turski"'
Autor:
Mikołaj Żak, Grzegorz Muziol, Marcin Siekacz, Artem Bercha, Mateusz Hajdel, Krzesimir Nowakowski-Szkudlarek, Artur Lachowski, Mikołaj Chlipała, Paweł Wolny, Henryk Turski, Czesław Skierbiszewski
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-11 (2023)
Abstract Gallium nitride-based light-emitting diodes have revolutionized the lighting market by becoming the most energy-efficient light sources. However, the power grid, in example electricity delivery system, is built based on alternating current,
Externí odkaz:
https://doaj.org/article/df2544d985474f0db23f6d9bbbc09288
Publikováno v:
Advanced Physics Research, Vol 2, Iss 10, Pp n/a-n/a (2023)
Abstract The width of polar InGaN quantum wells (QWs) is usually limited to a few nanometers to ensure a sufficient overlap between the wave functions of the ground electron and hole state. This paper presents the results of material gain measurement
Externí odkaz:
https://doaj.org/article/9e50000527fe4524ab0706ecd1e32677
Autor:
Leszek Konczewicz, Malgorzata Iwinska, Elzbieta Litwin-Staszewska, Marcin Zajac, Henryk Turski, Michal Bockowski, Dario Schiavon, Mikołaj Chlipała, Sandrine Juillaguet, Sylvie Contreras
Publikováno v:
Materials, Vol 15, Iss 20, p 7069 (2022)
This paper presents low-temperature measurements of magnetoresistivity in heavily doped n-type GaN grown by basic GaN growth technologies: molecular beam epitaxy, metal-organic vapor phase epitaxy, halide vapor phase epitaxy and ammonothermal. Additi
Externí odkaz:
https://doaj.org/article/3e7c127b46f54107a30f1590bf4df5be
Autor:
Henryk Turski, Pawel Wolny, Mikolaj Chlipala, Marta Sawicka, Anna Reszka, Pawel Kempisty, Leszek Konczewicz, Grzegorz Muziol, Marcin Siekacz, Czeslaw Skierbiszewski
Publikováno v:
Materials, Vol 15, Iss 17, p 5929 (2022)
Atomically thin metal adlayers are used as surfactants in semiconductor crystal growth. The role of the adlayer in the incorporation of dopants in GaN is completely unexplored, probably because n-type doping of GaN with Si is relatively straightforwa
Externí odkaz:
https://doaj.org/article/ac6e34f015b74552b38fcc42e64da3e9
Autor:
Mateusz Hajdel, Mikolaj Chlipała, Marcin Siekacz, Henryk Turski, Paweł Wolny, Krzesimir Nowakowski-Szkudlarek, Anna Feduniewicz-Żmuda, Czeslaw Skierbiszewski, Grzegorz Muziol
Publikováno v:
Materials, Vol 15, Iss 1, p 237 (2021)
The design of the active region is one of the most crucial problems to address in light emitting devices (LEDs) based on III-nitride, due to the spatial separation of carriers by the built-in polarization. Here, we studied radiative transitions in In
Externí odkaz:
https://doaj.org/article/839c1d35ff194958a2558184c647287d
Autor:
Mikołaj Żak, Grzegorz Muziol, Marcin Siekaz, Artem Bercha, Mateusz Hajdel, Krzesimir Szkudlarek, Artur Lachowski, Mikołaj Chlipała, Paweł Wolny, Henryk Turski, Czeslaw Skierbiszewski
The GaN-based light emitting diodes (LEDs) brought a revolution in the lighting market by becoming the most energy-efficient light sources. However, the power grid, i.e. electricity delivery system, is built based on alternating current (AC), which r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd6d31d916b80d27af7b6e851f2aed9a
https://doi.org/10.21203/rs.3.rs-2741889/v1
https://doi.org/10.21203/rs.3.rs-2741889/v1
Autor:
Czeslaw Skierbiszewski, Grzegorz Muzioł, Henryk Turski, Marcin Siekacz, Julia Slawinska, Mikolaj Chlipala, Mikolaj Zak
Publikováno v:
Light-Emitting Devices, Materials, and Applications XXVII.
Autor:
Julita Smalc-Koziorowska, P. Wolny, Czeslaw Skierbiszewski, A. Feduniewicz-Żmuda, Marta Sawicka, Krzesimir Nowakowski-Szkudlarek, Henryk Turski, M. Kryśko, Natalia Fiuczek
Publikováno v:
Crystal Growth & Design. 21:5223-5230
Autor:
Mateusz Hajdel, Mikolaj Chlipala, Henryk Turski, Marcin Siekacz, Pawel Wolny, Krzesimir Nowakowski-Szkudlarek, Anna Feduniewicz-Zmuda, Czeslaw Skierbiszewski, Grzegorz Muziol
Publikováno v:
2022 Compound Semiconductor Week (CSW).
Autor:
Marta Sawicka, Oliwia Gołyga, Natalia Fiuczek, Grzegorz Muzioł, Anna Feduniewicz-Żmuda, Marcin Siekacz, Henryk Turski, Robert Czernecki, Ewa Grzanka, Igor Prozheev, Filip Tuomisto, Czesław Skierbiszewski
Publikováno v:
Materials Science in Semiconductor Processing. 155:107234