Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Henryk M. Przewłocki"'
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 3 (2023)
Distributions of the gate-dielectric EBG(x, y) and semiconductor-dielectric EBS(x, y) barrier height values have been determined using the photoelectric measurement method. Modified Powell-Berglund method was used to measure barrier height values. Mo
Externí odkaz:
https://doaj.org/article/b40c3bf2784c416ba8669b13f885cdc4
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 2 (2023)
Starting from a quantum statistical reasoning, it is demonstrated that entropy properties of silicon/silicon dioxide interface electron traps may have a strong influence on measured distributions of interface states, depending on measurement method u
Externí odkaz:
https://doaj.org/article/9d28c2b6e6f34064b2a76b6343446775
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 4 (2023)
The photoelectric techniques are often used for the measurements of metal oxide semiconductor (MOS) structure parameters. These methods, which consist in illuminating the MOS structure with a semitransparent metal gate by a UV light beam, are often c
Externí odkaz:
https://doaj.org/article/eb2c033543994857af385c13b7a9fe7f
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This book describes means in improving the technology of LSI/VLSI ICs production. It does so by concentrating on improvements of manufacturing yield and quality of the products by detecting weak points which should be eliminated on the way up the lea