Zobrazeno 1 - 10
of 117
pro vyhledávání: '"Henryk, Teisseyre"'
Autor:
Henryk Teisseyre, Tomasz Andryszewski, Wiktoria Zajkowska, Jan Suffczynski, Krzysztof Fronc, Marcin Stachowicz, Slawomir Kret
Publikováno v:
Oxide-based Materials and Devices XIV.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a82c8e6209f8ae845c9a31cf4ab3f248
https://doi.org/10.1117/12.2661351
https://doi.org/10.1117/12.2661351
Publikováno v:
Oxide-based Materials and Devices XIII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3970e11ddb4799befdee3a8c8fcff826
https://doi.org/10.1117/12.2615627
https://doi.org/10.1117/12.2615627
Autor:
Zeesham Abbas, Kisa Fatima, Izabela Gorczyca, Syed Hassan Abbas Jaffery, Asif Ali, Muhammad Irfan, Hafiz Hamid Raza, H. Algarni, Shabbir Muhammad, Henryk Teisseyre, Sajjad Hussain, Saifeldin M. Siddeeg, Jongwan Jung
Publikováno v:
Materials Science in Semiconductor Processing. 154:107206
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e816333b8b481476bf50c66c0d37ab3
https://doi.org/10.1016/j.mssp.2022.107206
https://doi.org/10.1016/j.mssp.2022.107206
Publikováno v:
GaN and Related Materials ISBN: 9781003211082
GaN and Related Materials
GaN and Related Materials
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18d94dda9c7f10a63699b9f5a6b1de26
https://doi.org/10.1201/9781003211082-10
https://doi.org/10.1201/9781003211082-10
Autor:
Jan Suffczyński, Henryk Teisseyre, Sławomir Kret, Bogdan J. Kowalski, Agnieszka Pieniążek, Bartlomiej S. Witkowski, Michal Bockowski, Anna Reszka, D. Jarosz, Marek Godlewski, Adrian Kozanecki
Publikováno v:
Nanoscale. 11:2275-2281
While synthesis methods for pure ZnO nanostructures are well established, an efficient technique for the growth of ZnO-based nanowires or microrods that incorporate any type of quantum structure is yet to be established. Here, we report on the fabric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b2004de8673224a33b9ab6379031888
https://doi.org/10.1039/c8nr07065b
https://doi.org/10.1039/c8nr07065b
Autor:
Paweł, Dłużewski, Jaroslaw Z, Domagala, Sławomir, Kret, Dawid, Jarosz, Marcin, Kryśko, Henryk, Teisseyre
Publikováno v:
The Journal of chemical physics. 154(15)
The rocksalt structure of ZnO has a very promising bandgap for optoelectronic applications. Unfortunately, this high-pressure phase is unstable under ambient conditions. This paper presents experimental results for rocksalt-type ZnO/MgO superlattices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::64e92c99ebb3add9560f4732a85b1f12
https://pubmed.ncbi.nlm.nih.gov/33887922
https://pubmed.ncbi.nlm.nih.gov/33887922
Autor:
D. Jarosz, Anna Reszka, Henryk Teisseyre, N. E. Christensen, Fabrice Donatini, J. Z. Domagala, Małgorzata Wierzbowska, D. Le Si Dang, I. Gorczyca
Publikováno v:
Physical Review B. 102
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa21de1e749fb0987ced042a210d9c17
https://doi.org/10.1103/physrevb.102.079903
https://doi.org/10.1103/physrevb.102.079903
Autor:
I. Gorczyca, Anna Reszka, Małgorzata Wierzbowska, Henryk Teisseyre, J. Z. Domagala, Fabrice Donatini, N. E. Christensen, D. Le Si Dang, D. Jarosz
Publikováno v:
Gorczyca, I, Wierzbowska, M, Jarosz, I D, Domagala, J Z, Reszka, A, Dang, D L S, Donatini, F, Christensen, N E & Teisseyre, H 2020, ' Rocksalt ZnMgO alloys for ultraviolet applications : Origin of band-gap fluctuations and direct-indirect transitions ', Physical Review B, vol. 101, no. 24, 245202 . https://doi.org/10.1103/PhysRevB.101.245202
Rocksalt $\mathrm{Z}{\mathrm{n}}_{x}\mathrm{M}{\mathrm{g}}_{1\ensuremath{-}x}\mathrm{O}$ alloys are theoretically and experimentally investigated for near- and deep-UV optoelectronics with a tunable band gap of 4.2--7.8 eV. Regarding the key question
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b9fd8be02d2573d657382e3d9a43685b
https://doi.org/10.1103/physrevb.101.245202
https://doi.org/10.1103/physrevb.101.245202
Autor:
Henryk Teisseyre, Sławomir Kret, Adrian Kozanecki, J. Z. Domagala, D. Jarosz, Agnieszka Pieniążek, M. Stachowicz
Publikováno v:
Journal of Alloys and Compounds. 766:398-401
Plasma-assisted molecular beam epitaxy growth of ZnO and Zn1-xMgxO epilayers on Al2O3 (11–20) substrates is described. The influence of the substrate temperature on the growth rate and magnesium concentration in Zn1-xMgxO epilayers was studied in d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb414595f5559aeb15ee27ebffc05771
https://doi.org/10.1016/j.jallcom.2018.07.014
https://doi.org/10.1016/j.jallcom.2018.07.014
Autor:
Nao Takekawa, Michal Bockowski, M. Fijalkowski, P. Kruszewski, Elzbieta Litwin-Staszewska, Tomasz Sochacki, M. Amilusik, Hisashi Murakami, Ryszard Piotrzkowski, V. Yu. Ivanov, M. Iwinska, Boleslaw Lucznik, Henryk Teisseyre
Publikováno v:
Journal of Crystal Growth. 480:102-107
Crystallization by hydride vapor phase epitaxy method of gallium nitride single crystals doped with germanium and properties of the obtained material are described in this paper. Growth was performed in hydrogen and nitrogen carrier gas. The results
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35cd1ab27736d03c21d9f93bfb8dc08b
https://doi.org/10.1016/j.jcrysgro.2017.10.016
https://doi.org/10.1016/j.jcrysgro.2017.10.016