Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Henry Pearce-Percy"'
Autor:
Anthony Zografos, Andy Hening, Vladimir Joshkin, Kevin Leung, Dave Pearson, Henry Pearce-Percy, Mario Rougieri, Yoko Parker, John Weir, Donald Blackfield, Yu-Jiuan Chen, Steven Falabella, Gary Guethlein, Brian Poole, Robert W. Hamm, Reinard Becker, Marianne E. Hamm
Publikováno v:
AIP Conference Proceedings.
A compact accelerator system architecture based on the dielectric wall accelerator (DWA) for medical proton beam therapy has been developed by the Compact Particle Acceleration Corporation (CPAC). The major subsystems are a Radio Frequency Quadrupole
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0267785519362f3492c7ab18da6c945
https://doi.org/10.1063/1.3665298
https://doi.org/10.1063/1.3665298
Autor:
Maiying Lu, Henry Pearce-Percy, David W. Alexander, Suzanne Weaver, Wayne Phillips, Frank E. Abboud, Damon M. Cole, Thomas P. Coleman, Jan M. Chabala, Charles A. Sauer
Publikováno v:
SPIE Proceedings.
As optical lithography is extended to the 130 nm generation and beyond, demanding requirements are placed on mask pattern generators to produce quartz substrate masks. This paper reports on the lithography and critical dimension (CD) performance of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81d59756678e262e9e5d4978b0b15b6a
https://doi.org/10.1117/12.377110
https://doi.org/10.1117/12.377110
Autor:
Suzanne Weaver, Maiying Lu, Frank E. Abboud, Ulrich Hofmann, Damon M. Cole, Robert J. Naber, Charles A. Sauer, Henry Pearce-Percy, Jan M. Chabala, Dinh Ton, Matthew Vernon
Publikováno v:
SPIE Proceedings.
This paper describes improvements in column design and writing strategy that, together, enable mask production for the 130 nm technology node. The MEBESR 5500 system employs a new high-dose electron gun and column design. We summarize experiments rel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05744e0521323010a8d58077ba9404e7
https://doi.org/10.1117/12.373345
https://doi.org/10.1117/12.373345
Autor:
Frank E. Abboud, Henry Pearce-Percy, William Wang, Richard Prior, Charles A. Sauer, Marian Mankos, Matthew Vernon, Damon M. Cole
Publikováno v:
SPIE Proceedings.
Optical lithography will be the dominant technique used for 180 nm generation production devices. 1 With a reduced feature size on the wafer, 4X optical reduction, optical proximity correction (OPC), and phase shift lithography techniques, mask-relat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a24d1f0c66171516291d0ae5839681f0
https://doi.org/10.1117/12.301178
https://doi.org/10.1117/12.301178
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 16:3206
This article demonstrates the electron-optical optimization of a high-current, high-dose column operating at 10 keV. The goal is to increase the available dose to the resist, which requires increasing the current density to more than 800 A/cm2. Our c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d9960ae94406484e60b20b14aef0e1f
https://doi.org/10.1116/1.590352
https://doi.org/10.1116/1.590352
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 15:2754
To support device generations below 250 nm mask writing systems must improve productivity for smaller design address grids and simultaneously provide higher dose to support high resolution processes. Combining multipass writing techniques with higher
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::250f973b53f80361c98b5a63f1e02b94
https://doi.org/10.1116/1.589721
https://doi.org/10.1116/1.589721
Autor:
Henry Pearce-Percy, Albert Benveniste, Michael D. Lubin, Frederick Raymond, Richard Prior, Leonard Gasiorek, Frank E. Abboud
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:3393
Some systematic errors of the mebes raster scan lithography system are examined and how significant accuracy improvements can be achieved is demonstrated. The accuracy improvements result from error compensation hardware and software applying correct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95aa020dd17efbbcdad5b3253c9bfe75
https://doi.org/10.1116/1.587519
https://doi.org/10.1116/1.587519
Autor:
Frank E. Abboud, Mark A. Gesley, D. McClure, Dave Colby, W. Eckes, R. Dean, K. Comendant, S. Watson, Henry Pearce-Percy, Richard Prior
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:2734
The lithographic performance of the MEBESR IV maskmaker is described. This raster‐scan electron beam lithography system automates the thermal field emission (TFE) column and makes a number of advances in the electronics and software control subsyst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a18790418aecc41d7bf783437f65c21e
https://doi.org/10.1116/1.585993
https://doi.org/10.1116/1.585993
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Conference
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