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Autor:
Jeffrey B. Johnson, Dongmo Pernell, Uppili S. Raghunathan, Rajendran Krishnasamy, Henry Lee Aldridge, John J. Pekarik, Vibhor Jain, Mishra Rahul
Publikováno v:
ECS Transactions. 98:127-134
Process sensitivity and variation, such as layer thicknesses, etch dimensions and doping levels are all process parameters that should be well understood when assessing their impact on end of process wafer quality and device performance. Improvements