Výsledky vyhledávání - "Henry J. H. Chen"

Characterizations of Electrolyte–Insulator–Semiconductor Sensors With Array Wells and a Stack-Sensing Membrane

Autor: Tzu Nien Lee, Sun-Zen Chen, Yo-Chen Huang, Henry J. H. Chen

Publikováno v: IEEE Transactions on Electron Devices. 67:3761-3766

This study addressed the characteristics of electrolyte–insulator–semiconductor (EIS) pH sensors with array wells and sensing membrane stacks of 3-aminopropyltriethoxysilane (APTES)/SiO2. The arrays of square wells were fabricated by nanoimprint

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f322d52f17c432ebbb45828c87266057
https://doi.org/10.1109/ted.2020.3009646

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Benzodipyrrole-2,6-dione-3,7-diylidenedimalononitrile Derivatives for Air-Stable n-Type Organic Field-Effect Transistors: Critical Role of N-Alkyl Substituent on Device Performance

Autor: Henry J. H. Chen, Attrimuni P. Dhondge, Yu-Chang Chang, Yi-Xiang Huang, Shin-Lun Tseng, Ming-Yu Kuo, Yu-Hung Hsu, Ta Lin

Publikováno v: The Journal of Organic Chemistry. 84:14061-14068

Benzodipyrrole-2,6-dione-3,7-diylidenedimalononitriles (BDPMs) were synthesized as active materials for the use in air-stable n-type organic field-effect transistors (OFETs), whose optical and elec...

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9179b2654f641ff1b92072871302fbed
https://doi.org/10.1021/acs.joc.9b02207

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Poly-Si Thin-Film Transistors with N-Type Line-Array Doping Channels Fabricated by Nanoimprint Lithography

Autor: Tzu Nien Lee, Henry J. H. Chen, Pin Tun Huang

Publikováno v: ECS Journal of Solid State Science and Technology. 8:Q158-Q163

This study focuses on the characteristics of polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) with n-type line-array doping channels manufactured by nanoimprint lithography. Array doping patterns with a line width/space of approximately

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::42c73bed122845871e04914b2598f78a
https://doi.org/10.1149/2.0161908jss

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Polycrystalline-silicon-based double-gate ion-sensitive field-effect transistors using APTES/SiO2 stack-sensing membrane

Autor: Jun-Rong Chen, Henry J. H. Chen, Shin-Lun Tseng

Publikováno v: Japanese Journal of Applied Physics. 61:SD1001

This study demonstrated a polycrystalline-silicon (poly-Si)-based double-gate (DG) ion-sensitive field-effect transistors (DG-ISFETs) using APTES/SiO2 stack-sensing membrane. The APTES/SiO2 stack-sensing membrane enhanced the single-gate (SG) sensiti

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aa64148c1d5a926abd71276b4516001d
https://doi.org/10.35848/1347-4065/ac5422

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Characterizations of Ion-Sensitive Field-Effect Transistors with Silicon Wire Array Channels and Stack-Sensing Membrane

Autor: Henry J. H. Chen, Tzu Nien Lee, Shin-Lun Tseng, Sun-Zen Chen, Po-Wen Chiu

Publikováno v: Journal of The Electrochemical Society. 169:037511

In this study, the characteristics of ion-sensitive field-effect transistors (ISFETs) with silicon wire array channels and sensing membrane stacks of 3-aminopropyltriethoxysilane (APTES)/SiO2 were investigated. Si wires were fabricated by nanoimprint

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9472c4d124c482b0d4d7554f33d8938b
https://doi.org/10.1149/1945-7111/ac5ad9

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Electrolyte-Insulator-Semiconductor pH Sensors with Arrayed Patterns Manufactured by Nano Imprint Technology

Autor: Henry J. H. Chen, Tzu Nien Lee, Yo-Chen Huang, Kuang-Chien Hsieh

Publikováno v: Journal of The Electrochemical Society. 165:B767-B772

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c96c70d676ebc064106a87a3b15bc7c3
https://doi.org/10.1149/2.1401814jes

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Ultra-Shallow Junction Formation by Monolayer Doping Process in Single Crystalline Si and Ge for Future CMOS Devices

Autor: Henry J. H. Chen, Tseung-Yuen Tseng, Yao-Jen Lee, Shang Shiun Chuang, Kuo-Hsing Kao, Michael I. Current, Po Jung Sung, Ta Chun Cho

Publikováno v: ECS Journal of Solid State Science and Technology. 6:P350-P355

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::454f40956fff25b811da197e0cc25fcc
https://doi.org/10.1149/2.0011707jss

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Benzodipyrrole-2,6-dione-3,7-diylidenedimalononitrile Derivatives for Air-Stable

Autor: Attrimuni P, Dhondge, Yi-Xiang, Huang, Ta, Lin, Yu-Hung, Hsu, Shin-Lun, Tseng, Yu-Chang, Chang, Henry J H, Chen, Ming-Yu, Kuo

Publikováno v: The Journal of organic chemistry. 84(21)

Benzodipyrrole-2,6-dione-3,7-diylidenedimalononitriles (BDPMs) were synthesized as active materials for the use in air-stable

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::0e143ae3670ca4f3e40853f9752b8e03
https://pubmed.ncbi.nlm.nih.gov/31578058

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Study on Sensing Properties of Ion-Sensitive Field-Effect-Transistors Fabricated With Stack Sensing Membranes

Autor: Henry J. H. Chen, Tzu Nien Lee, Kuang Chien Hsieh

Publikováno v: IEEE Electron Device Letters. 37:1642-1645

This letter addresses the characteristics of biosensor made of ion-sensitive field-effect-transistors (ISFETs) with stacked 3-aminopropyltriethoxysilane/SiO2 sensing membranes. These devices exhibit higher sensitivity, lower hysteresis, and lower dri

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::395295ba480ba7effa9e45bb23a3dfe2
https://doi.org/10.1109/led.2016.2619714

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